Effects of the Multilayer Structure on the Responsivity of Pyroelectric Thin Film Detectors

1994 ◽  
Vol 360 ◽  
Author(s):  
Zhu Jianguo ◽  
Xiao Dingquan ◽  
Qian Zhenghong ◽  
Zhang Wen ◽  
Du Siaosong
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Integrated Circuit ◽  
Multilayer Structure ◽  
Modulation Frequency ◽  
Flow Equation ◽  
One Dimensional ◽  
The One ◽  
Direct Incorporation ◽  
Room Temperature Operation

AbstractPyroelectric thin film detectors have advantages of wavelength independent sensitivity, room temperature operation and direct incorporation with integrated circuit amplifiers. Pyroelectric thin films with good quality have be prepared by many advanced thin film technologies [1-2]. The responsivity of pyroelectric thin film detectors is dependent on the thermal properties of the substrate, on which pyroelectric thin film detectors are prepared. The heat conduction in the detectors was investigated using the one-dimensional heat flow equation and the expressions describing the detectors performance were derived for pyroelectric thin films detectors with multilayer structure. The numerical simulation showed that the pyroelectric thin film detectors need effective heat isolation. If the air gap could be the heat isolation layer, which is between the bottom electrode and substrate, the iesponsivity of detectors would be higher than that of detectors which have no heat isolation in certain modulation frequency range.

Exotic Doping for Zno Thin Films: Possibility of Monolithic Optical Integrated Circuit

1999 ◽  
Vol 574 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tamaki Shimura ◽  
Toshifumi Wakano ◽  
Atsushi Ashida ◽  
Taichiro Ito
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nonlinear Optic ◽  
Integrated Circuit ◽  
Film Surface ◽  
Zno Thin Films ◽  
Process Window ◽  
Electro Optic ◽  
Film Substrate ◽  
Optical Integrated Circuit

AbstractWe propose the application of ZnO:X (X = Li, Mg, N, In, Al, Mn, Gd, Yb etc.) films for a monolithic Optical Integrated Circuit (OIC). Since ZnO exhibits excellent piezoelectric effect and has also electro-optic and nonlinear optic effects and the thin films are easily obtained, it has been studied as one of the important thin film wave guide materials especially for an acoustooptic device[1]. In terms of electro-optic and nonlinear optic effects, however, LiNbO3 or LiTaO3 is superior to ZnO. The most important issue of thin film waveguide using such ferroelectrics is optical losses at the film/substrate interface and the film surface, because the process window to control the surface morphology is very narrow due to their high deposition temperature. Since ZnO can be grown at extremely low temperature, the roughness at the surface and the interface is expected to be minimized. This is the absolute requirement especially for waveguide using a blue or ultraviolet laser. Recently, lasing at the wavelength of ultraviolet, ferroelectric and antiferromagnetic behaviors of ZnO doped with various exotic elements (exotic doping) have been reported. This paper discusses the OIC application of ZnO thin films doped with exotic elements.

Enhanced Electrical Properties of AZO/IZO Multilayered Thin Film with Post Laser Annealing Process

2021 ◽  
Vol 21 (3) ◽  
pp. 1971-1977
Author(s):  
Jihye Kang ◽  
Dongsu Park ◽  
Donghun Lee ◽  
Masao Kamiko ◽  
Sung-Jin Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Multilayer Structure ◽  
Laser Annealing ◽  
Transparent Conducting Oxide ◽  
Sol Gel ◽  
Electrical And Optical Properties ◽  
Vis Spectroscopy ◽  
Doped Zno

In this research, alternative deposition process of ZnO-based thin films have been studied for transparent conducting oxide (TCO) application. To improve the electrical and optical properties of transparent oxide thin films, alternatively stacked Al-doped ZnO and In-doped ZnO thin films were investigated. Multilayer structure of alternative 6 layers of thin films were prepared in this research. Especially, Aluminum and Indium were chosen as dopant materials. Thin films of Al-doped ZnO (AZO) and In-doped ZnO (IZO) were alternatively deposited by spin coating with sol-gel method. After deposition of multilayered thin films, multi steps of furnace (F), rapid thermal annealing (R) and CO2 laser annealing (L) processes were carried out and investigated thin film properties by dependence of post-annealing sequence and thin film structures. The electrical and optical properties of thin films were investigated by 4-point probe and UV-vis spectroscopy and its shows the greatest sheet resistance value of 0.59 kΩ/sq. from AZO/IZO multilayered structure and upper 85% of transmittance. The structural property and surface morphology were measured by X-Ray Diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The Al- and In-doped ZnO thin film shows the highest intensity value at (002) peak of AZO/IZO multilayer structure which was performed FRL process.

Characterization of MgZnO Thin Film for 1 GHz MMIC Applications

2013 ◽  
Vol 832 ◽  
pp. 310-315
Author(s):  
R. Ahmad ◽  
M.S. Shamsudin ◽  
M. Salina ◽  
S.M. Sanip ◽  
M. Rusop ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Loss Tangent ◽  
Integrated Circuit ◽  
Annealing Temperature ◽  
Dielectric Material ◽  
Sol Gel ◽  
Size Reduction ◽  
High Frequencies

MgZnO thin films are proposed as a new dielectric material for 1 GHz monolithic microwave integrated circuit (MMIC) applications. The high permittivity of this material enables size reduction; furthermore this can be fabricated using a low cost processing method. In this work, MgZnO/Pt/Si thin films were synthesized using a sol-gel spin coating method. The samples were annealed at various temperatures with the effects on physical and electrical properties investigated at direct current (DC) and high frequencies. The physical properties of MgZnO thin film were analyzed using X-Ray diffraction, with the improvements shown in crystalline structure and grain size with increasing temperature up to 700 °C. DC resistivity of 77 Ωcm at higher annealing temperature obtained using a four point probe station. In order to prove the feasibility at high frequencies, a test structure consisting of a 50 Ω transmission line and capacitors with 50 × 50 μm electrode area were patterned on the films using electron beam lithography. The radio frequency (RF) properties were measured using aWiltron 37269Avector network analyzer andCascade Microtechon-wafer probes measured over a frequency range of 0.5 to 3 GHz. The dielectric constant, loss tangent and return loss, S11improve with the increment annealing temperature. The dielectric constant was found to be 18.8, with loss tangent of 0.02 at 1 GHz. These give a corresponding size reduction of ten times compared to conventional dielectrics, silicon nitride (Si3N4). These indicate that the material is suitable to be implemented as a new dielectric material for 1GHz MMIC applications.

Cadmium Sulfide and Zinc Sulfide Nanostructures Formed by Electrophoretic Deposition

2012 ◽  
Vol 507 ◽  
pp. 101-105 ◽  
Author(s):  
Alejandro Vázquez ◽  
Israel López ◽  
Idalia Gómez
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Cadmium Sulfide ◽  
Zinc Sulfide ◽  
Electrophoretic Deposition ◽  
Cds Nanoparticles ◽  
One Dimensional ◽  
Cds Thin Films ◽  
The One ◽  
One Dimensional Nanostructures

Cadmium sulfide (CdS) and zinc sulfide (ZnS) nanostructures were formed by means of electrophoretic deposition of nanoparticles with mean diameter of 6 nm and 20 nm, respectively. Nanoparticles were prepared by a microwave assisted synthesis in aqueous dispersion and electrophoretically deposited on aluminum plates. CdS thin films and ZnS one-dimensional nanostructures were grown on the negative electrodes after 24 hours of electrophoretic deposition at direct current voltage. CdS and ZnS nanostructures were characterized by means of scanning electron (SEM) and atomic force (AFM) microscopies analysis. CdS thin films homogeneity can be tunable varying the strength of the applied electric field. Deposition at low electric field produces thin films with particles aggregates, whereas deposition at relative high electric field produces smoothed thin films. The one-dimensional nanostructure size can be also controlled by the electric field strength. Two different mechanisms are considered in order to describe the formation of the nanostructures: lyosphere distortion and thinning and subsequent dipole-dipole interactions phenomena are proposed as a possible mechanism of the one-dimensional nanostructures, and a mechanism considering pre-deposition interactions of the CdS nanoparticles is proposed for the CdS thin films formation.

Niobium and zirconium telluride thin films prepared by sputtering

1999 ◽  
Vol 14 (5) ◽  
pp. 2070-2079 ◽  
Author(s):  
Daniel Pailharey ◽  
Yves Mathey ◽  
Mohamad Kassem
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Large Range ◽  
Sputter Deposition ◽  
The Other ◽  
Striking Feature ◽  
Structural Types ◽  
The One ◽  
Film Form

A versatile procedure of sputter deposition, well-adapted for getting a large range of Te/M ratios (with M = Zr or Nb), has led to the synthesis of several highly anisotropic zirconium and niobium polytellurides in thin film form. Upon tuning the two key parameters of the process, i.e., the Te percentage in the target and the substrate temperature during the deposition, preparation of systems ranging from ZrTe0.72 to ZrTe6.7, on the one hand, and from NbTe1.28 to NbTe7.84, on the other, has been achieved. Besides their amorphous or crystalline (with or without preferential orientations) behavior and their relationship to known structural types, the most striking feature of these films is their large departure from the stoichiometry of the bulk MTex reference compounds. This peculiarity, together with the possible changes of composition under annealing, are described and interpreted in terms of variable amounts of Te and M atoms trapped or intercalated within the parent structures.

A Comparison of Electromigration in Bulk and Thin - Film Aluminum

1995 ◽  
Vol 391 ◽  
Author(s):  
Anthony S. Oates
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Grain Boundaries ◽  
Drift Velocity ◽  
Integrated Circuit ◽  
Transport Mechanism ◽  
Dominant Mode ◽  
Velocity Data ◽  
Al Thin Film

AbstractThe dominant mode of electromigration in polycrystalline Al thin - film conductors is along grain boundaries when the conductor width is significantly larger than the grain size. Integrated circuit feature sizes, however, have now decreased to the point where microstructures are no longer polycrystalline, but are near - bamboo. Electromigration must operate along pathways other than grain boundaries in the bamboo segments. Here drift velocity data is presented for bamboo microstructures with widths down to 0.6 μm and compared with drift data available in the literature for thin films with a variety of microstructures and bulk Al. Bamboo films show lower drift velocities and higher activation energies for drift than polycrystalline films. The data for bamboo microstructures is consistent with drift measurements performed on bulk Al indicating that the transport mechanism in bamboo films is identical to that in bulk Al.

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