Thermo-Mechanical Properties of Terfenol-D Thin Films

1994 ◽  
Vol 360 ◽  
Author(s):  
Quanmin Su ◽  
Y. Zheng ◽  
Manfred Wuttig
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Amorphous Material ◽  
Recrystallization Temperature ◽  
Dynamic Measurements ◽  
Si Substrates ◽  
Damping Characteristics ◽  
Δe Effect ◽  
Film Substrate ◽  
Deposited Films

AbstractThe thermo-mechanical properties of Terfenol-D thin films deposited on Si substrates werestudied by static and dynamic measurements of film/substrate composite cantilevers. The Curie transition, δE effect and mechanical damping of the film were measuredsimultaneously. The stress in the film was controlled by annealing below the recrystallization temperature and determined to vary from -500 MPa, compression, in as deposited films to +480 MPa, tension, in annealed films. The Curie temperature shifts from 80ºC to 140ºC as the tension increases while the structure of the film remains amorphous. The stress change induced by annealing also drastically effects the film's damping characteristics. The δE effect of the amorphous material, about 20%, wasused to estimate the magnetostriction, λs≈4.10-3.

Stress Controlled Magneto-Mechanical Instability In Terfenol-D Thin Films

1997 ◽  
Vol 505 ◽  
Author(s):  
Quanmin Su ◽  
Y. Wen ◽  
Manfred Wuttig
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Mechanical Response ◽  
Substrate Material ◽  
Recrystallization Temperature ◽  
Mechanical Instability ◽  
Si Substrates ◽  
Different Temperatures ◽  
Film Substrate ◽  
Selection Of

ABSTRACTThe magneto-mechanical properties of Terfenol-D thin films deposited on Si substrates were studied by magnetic and mechanical measurements of film/substrate composite cantilevers. The AE effect and mechanical damping of the film were measured simultaneously. The stress in the film was controlled by annealing and deposition at different temperatures as well by the selection of the substrate material below the recrystallization temperature and determined to vary from -500 MPa, compression, in as deposited films to +480MPa, tension, in annealed films. This paper highlights the magneto-mechanical response of tensioned 1 m nanocrystalline Terfenol-D films on 50 Pim Si substrates display a pronounced damping maximum at a magnetic field of about 1.5kOe oriented perpendicular to the plane of the film. The phenomenon is critically dependent on the orientation of the magnetic field and is the result of a magneto-mechanical instability in the Terfenol film.

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

scholarly journals Multimodal Surface Instabilities in Curved Film–Substrate Structures

2017 ◽  
Vol 84 (8) ◽  
Author(s):  
Ruike Zhao ◽  
Xuanhe Zhao
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Numerical Simulation ◽  
Period Doubling ◽  
Tubular Structures ◽  
Modulus Ratio ◽  
Future Design ◽  
Mismatch Strain ◽  
Curved Structures ◽  
Film Substrate

Structures of thin films bonded on thick substrates are abundant in biological systems and engineering applications. Mismatch strains due to expansion of the films or shrinkage of the substrates can induce various modes of surface instabilities such as wrinkling, creasing, period doubling, folding, ridging, and delamination. In many cases, the film–substrate structures are not flat but curved. While it is known that the surface instabilities can be controlled by film–substrate mechanical properties, adhesion and mismatch strain, effects of the structures’ curvature on multiple modes of instabilities have not been well understood. In this paper, we provide a systematic study on the formation of multimodal surface instabilities on film–substrate tubular structures with different curvatures through combined theoretical analysis and numerical simulation. We first introduce a method to quantitatively categorize various instability patterns by analyzing their wave frequencies using fast Fourier transform (FFT). We show that the curved film–substrate structures delay the critical mismatch strain for wrinkling when the system modulus ratio between the film and substrate is relatively large, compared with flat ones with otherwise the same properties. In addition, concave structures promote creasing and folding, and suppress ridging. On the contrary, convex structures promote ridging and suppress creasing and folding. A set of phase diagrams are calculated to guide future design and analysis of multimodal surface instabilities in curved structures.

Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
C. K. Chiang ◽  
W. Wong-Ng ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
H. M. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Material ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Linear Shrinkage ◽  
Laser Deposition ◽  
Amorphous Films ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Pzt Thin Film

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

Effect of Substrate-Target Distance on the Structure of TiCrN Films Deposited from Mosaic Target by Reactive DC Magnetron Sputtering

2019 ◽  
Vol 798 ◽  
pp. 163-168
Author(s):  
Nirun Witit-Anun ◽  
Adisorn Buranawong
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Magnetron Sputtering ◽  
Crystal Size ◽  
Target Distance ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Unbalanced Magnetron ◽  
Deposited Films

Titanium chromium nitride (TiCrN) thin films were deposited on Si substrates by reactive DC unbalanced magnetron sputtering from the Ti-Cr mosaic target. The effect of substrate-to-target distances (dst) on the structure of TiCrN thin films were investigated. The crystal structure, microstructure, thickness, roughness and chemical composition were characterized by glancing angle X-ray diffraction (GAXRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Cr)N solid solution. The as-deposited films exhibited a nanostructure with a crystal size less than 65 nm. The crystal size of all plane were in the range of 36.3 – 65.7 nm. The lattice constants were in the range of 4.169 Å to 4.229 Å. The thickness and roughness decrease from 500 nm to292 nm and 3.6 nm to 2.2 nm, respectively, with increasing the substrate-to-target distance. The chemical composition, Ti, Cr and N contents, of the as-deposited films were varied with the substrate-to-target distance. The as-deposited films showed compact columnar and dense morphology as a result of increasing the substrate-to-target distance.

Effects of Annealing on Pulsed Laser Deposited TiO2 Thin Films

2013 ◽  
Vol 446-447 ◽  
pp. 306-311 ◽  
Author(s):  
Sudhanshu Dwivedi ◽  
Somnath Biswas
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Morphological Studies ◽  
Atomic Force ◽  
Deposited Films ◽  
Type Crystal

Mixed phase TiO2 thin films of rutile and anatase type crystal orientations were deposited on Si substrates by pulsed laser deposition (PLD) technique. When annealed at 800°C at 1 mbar oxygen pressure for 3 h, the deposited films transform into a single phase of rutile type. Structural and morphological studies of the as-deposited and annealed films were performed with X-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FTIR), Raman spectroscopy, and atomic force microscopy (AFM). Photoluminescence (PL) spectroscopy was used for optical characterization of the annealed thin films.

Appling of New Optical Measurement and Theory in Mechanical Properties of Thin Film

2011 ◽  
Vol 121-126 ◽  
pp. 4295-4299
Author(s):  
Hao MA Yun ◽  
Lu Ping Chao ◽  
J. S Hsu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Thermal Stresses ◽  
Optical Measurement ◽  
Phase Shifting ◽  
Deposition Condition ◽  
Full Field ◽  
Evaporation Technique ◽  
Film Substrate

The thesis aims to characterize the mechanical properties and stresses for thin films deposited on the circular substrates. First, the thin films with the same deposition condition were successively deposited on the distinct substrates using the evaporation technique. The phase-shifting Twyman-Green interferometer (PSTGI) was then employed to measure the warpage of the film-substrate structures and therefore the intrinsic stresses and thermal stresses can be calculated from the well-known Stoney’s formula. The coefficients of thermal expansion (CTE) and Young’s modulus of thin films were also obtained from the Stoney’s theory. Furthermore, the merit of full-field character of optical interferometry was used to propose a novel methodology using the Chen and Ou’s theory to improve the accuracy and to reduce the experiment procedures in the traditional measurement of the aforementioned mechanical properties. Finally, the measured results corresponding to the traditional and proposed methods were respectively substituted into their adopted theories to compare their difference. The results reveal that the accuracy of proposed methodology is considerably improved and the experimental procedures are reduced to those of the traditional methods.

scholarly journals Mechanical Properties of 3C-SiC Films for MEMS Applications

2007 ◽  
Vol 1049 ◽  
Author(s):  
Jayadeep Deva Reddy ◽  
Alex A. Volinsky ◽  
Christopher L. Frewin ◽  
Chris Locke ◽  
Stephen E. Saddow
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Carbide ◽  
Plastic Deformation ◽  
Elastic Modulus ◽  
Single Crystal ◽  
Elastic Contact ◽  
Si Substrates ◽  
Sic Films

AbstractThere is a technological need for hard thin films with high elastic modulus and fracture toughness. Silicon carbide (SiC) fulfills such requirements for a variety of applications at high temperatures and for high-wear MEMS. A detailed study of the mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates was performed by means of nanoindentation using a Berkovich diamond tip. The thickness of both the single and polycrystalline SiC films was around 1-2 μm. Under indentation loads below 500 μN both films exhibit Hertzian elastic contact without plastic deformation. The polycrystalline SiC films have an elastic modulus of 457 GPa and hardness of 33.5 GPa, while the single crystalline SiC films elastic modulus and hardness were measured to be 433 GPa and 31.2 GPa, respectively. These results indicate that polycrystalline SiC thin films are more attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging.

On the Characterization of Thin Film-only Mechanical Property Based on the Indentation Image Analysis

2006 ◽  
Vol 976 ◽  
Author(s):  
Yun-Hee Lee ◽  
Yong-Il Kim ◽  
Hoon-Sik Jang ◽  
Seung-Hoon Nahm ◽  
Ju-Young Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Penetration Depth ◽  
Volume Ratio ◽  
Hardness Measurement ◽  
Relative Depth ◽  
Au Thin Films ◽  
Film Substrate ◽  
Indenter Penetration

AbstractConventional nanoindentation testing generally uses a peak penetration depth of less than 10 % of thin-film thickness in order to measure film-only mechanical properties, without considering the critical depth for a given thin film-substrate system. The uncertainties in this testing condition make hardness measurement more difficult. We propose a new way to determine the critical relative depth for general thin-film/substrate systems; an impression volume analyzed from the remnant indent image is used here as a new parameter. Nanoindents made on soft Cu and Au thin films with various indentation loads were observed by atomic force microscope. The impression volume calculated from 3D remnant image was normalized by the indenter penetration volume. This indent volume ratio varied only slightly in the shallow regime but decreased significantly when the indenter penetration depth exceeded the targeted critical relative depth. Thus, we determined the critical relative depth by empirically fitting the trend of the indent volume ratio and determining the inflection point. The critical relative depths for Cu and Au films were determined as 0.170 and 0.173, respectively, values smaller than 0.249 and 0.183 determined from the hardness variation of the two thin films. Hence the proposed indent volume ratio is highly sensitive to the substrate constraint, and stricter control of the penetration depth is needed to measure film-only mechanical properties.

Spatial Variation of Mechanical Properties of ZnO Thin Films RF-Sputtered in Various Gas Environment

2016 ◽  
Vol 16 (03) ◽  
pp. 1650036
Author(s):  
V. Malapati ◽  
R. Singh
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Rf Sputtering ◽  
Hexagonal Wurtzite Structure ◽  
Film Deposition ◽  
Zno Thin Films ◽  
Nitrogen Gas ◽  
Gas Environment ◽  
Quartz Substrates ◽  
Deposited Films

ZnO thin films were deposited on quartz substrates by RF sputtering under argon, oxygen and nitrogen gas environment. The as deposited films showed hexagonal wurtzite structure with (002) orientation along c-axis. The mechanical properties of films with thickness ranging from 842[Formula: see text]nm to 1067[Formula: see text]nm and grain size 94–124[Formula: see text]nm were studied using nanoindentation technique. The Young’s modulus and hardness of the films were in the range 76–257[Formula: see text]GPa and 5–18[Formula: see text]GPa, respectively. Both parameters decreased with increase in indentation depth of the films. The spatial distribution of these parameters were strongly dependent on the gas environment used for film deposition.

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