Low Temperature Interactions Between Gold and Iron in Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
S. D. Brotherton ◽  
P. Bradley ◽  
A. Gill
Keyword(s):  
Binding Energy ◽  
Low Temperature ◽  
Room Temperature ◽  
Iron Complex ◽  
Temperature Range ◽  
Coulombic Attraction ◽  
Charge States ◽  
Kinetics Of ◽  
Temperature Interactions

ABSTRACTThe annealing kinetics of the gold-iron complex have been studied over the temperature range from room temperature to 400°C. From a consideration of the charge states of the gold and iron centres at room temperature it was concluded that the pairing was by Coulombic attraction. The binding energy of the centre was found to be 1.22 eV.During the annealing processes the interstitial iron was found to be precipitating and this was shown to modify the details of the growth and dissociation rates of the gold-iron complex.

Diffusion Mechanisms in Nanocrystalline and Nanolaminated Au-Cu

2007 ◽  
Vol 266 ◽  
pp. 13-28 ◽  
Author(s):  
Alan F. Jankowski
Keyword(s):  
Low Temperature ◽  
Grain Boundary ◽  
Grain Growth ◽  
Boundary Diffusion ◽  
Bulk Diffusion ◽  
Grain Boundary Diffusion ◽  
Dominant Mechanism ◽  
Temperature Range ◽  
Diffusion Mechanisms ◽  
Kinetics Of

Thermal anneal treatments are used to identify the temperature range of the two dominant diffusion mechanisms – bulk and grain boundary. To assess the transition between mechanisms, the low temperature range for bulk diffusion is established utilizing the decay of static concentration waves in composition-modulated nanolaminates. These multilayered structures are synthesized using vapor deposition methods as thermal evaporation and magnetron sputtering. However, at low temperature the kinetics of grain-boundary diffusion are much faster than bulk diffusion. The synthesis of Au-Cu alloys (0-20 wt.% Cu) with grain sizes as small as 5 nm is accomplished using pulsed electro-deposition. Since the nanocrystalline grain structure is thermally unstable, these structures are ideal for measuring the kinetics of grain boundary diffusion as measured by coarsening of grain size with low temperature anneal treatments. A transition in the dominant mechanism for grain growth from grain boundary to bulk diffusion is found with an increase in temperature. The activation energy for bulk diffusion is found to be 1.8 eV·atom-1 whereas that for grain growth at low temperatures is only 0.2 eV·atom-1. The temperature for transitioning from the dominant mechanism of grain boundary to bulk diffusion is found to be 57% of the alloy melt temperature and is dependent on composition.

scholarly journals A novel looped low-temperature heat-driven thermoacoustic refrigerator operating in room temperature range

2019 ◽  
Vol 158 ◽  
pp. 1653-1659 ◽  
Author(s):  
Huizhi Wang ◽  
Guoyao Yu ◽  
Jianying Hu ◽  
Zhanghua Wu ◽  
Mingyu Hou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Temperature Range ◽  
Temperature Heat ◽  
Thermoacoustic Refrigerator

Fast kinetics of Mg2+/Li+ hybrid ions in a polyanion Li3V2(PO4)3 cathode in a wide temperature range

2019 ◽  
Vol 7 (16) ◽  
pp. 9968-9976 ◽  
Author(s):  
Muhammad Rashad ◽  
Hongzhang Zhang ◽  
Xianfeng Li ◽  
Huamin Zhang
Keyword(s):  
Wide Temperature Range ◽  
Low Temperatures ◽  
Room Temperature ◽  
Excellent Performance ◽  
Fast Kinetics ◽  
Temperature Range ◽  
Kinetics Of

A Li3V2(PO4)3 based Mg2+/Li+ hybrid battery with excellent performance both at room temperature and low temperatures (0, −10, −20, −30, and −40 °C) is presented.

THE KINETICS OF THE REACTION OF ACTIVE NITROGEN WITH ETHYLENE

1962 ◽  
Vol 40 (4) ◽  
pp. 686-691 ◽  
Author(s):  
E. M. Levy ◽  
C. A. Winkler
Keyword(s):  
Nitric Oxide ◽  
Activation Energy ◽  
Low Temperature ◽  
Copper Oxide ◽  
Cobalt Catalyst ◽  
Cobalt Catalysts ◽  
Active Nitrogen ◽  
Temperature Range ◽  
P Factor ◽  
Kinetics Of

A comparison has been made of five methods for terminating the reaction of active nitrogen with ethylene in the temperature range 295° to 673° K. These were based on deactivating the active nitrogen by low-temperature trapping, by addition of nitric oxide, and by passing it over copper oxide or cobalt catalysts. With the nitric oxide and cobalt catalyst techniques, which appeared to be the most reliable of those used, an activation energy of 400 ± 200 cal/mole, with a P factor of about 10−5, have been determined for the reaction.

Formation and Effects of Secondary Defects in Ion implanted Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
Jack Washburn
Keyword(s):  
Activation Energy ◽  
Electron Microscope ◽  
Low Temperature ◽  
Ion Implantation ◽  
Room Temperature ◽  
Laser Annealing ◽  
Subsequent Annealing ◽  
Interface Migration ◽  
Kinetics Of ◽  
Ion Implanted

ABSTRACTThe clustering of isolated interstitial silicon, implanted atoms, and vacant lattice sites produced by low temperature and room temperature ion implantation during subsequent annealing is reviewed. An electron microscope method for studying the kinetics of the amorphous to crystalline transformation in silicon is described. The technique is applied to measurement of the activation energy for interface migration and the formation of microtwins for different growth directions. A very brief review of the effects of laser annealing after ion implantation is included.

Raman microspectroscopy of noncancerous and cancerous human breast tissues. Identification and phase transitions of linoleic and oleic acids by Raman low-temperature studies

The Analyst ◽  
2015 ◽  
Vol 140 (7) ◽  
pp. 2134-2143 ◽  
Author(s):  
Beata Brozek-Pluska ◽  
Monika Kopec ◽  
Jakub Surmacki ◽  
Halina Abramczyk
Keyword(s):  
Phase Transitions ◽  
Low Temperature ◽  
Room Temperature ◽  
Raman Microspectroscopy ◽  
Vibrational Properties ◽  
Human Breast ◽  
Temperature Range ◽  
Breast Tissues

We present the results of Raman studies in the temperature range of 293–77 K on vibrational properties of linoleic and oleic acids and Raman microspectroscopy of human breast tissues at room temperature.

Radiation Damage Study of Crotoxin Complex Crystal at 4K and 300K

1981 ◽  
Vol 39 ◽  
pp. 24-25
Author(s):  
W. Chiu ◽  
E. Knapek ◽  
T.W. Jeng ◽  
I. Dietrich
Keyword(s):  
Low Temperature ◽  
Radiation Damage ◽  
Room Temperature ◽  
Fundamental Problem ◽  
Resolution Limit ◽  
Temperature Experiment ◽  
Kinetics Of ◽  
Complex Crystal ◽  
Thin Crystal ◽  
Damage Study

Radiation damage is the most fundamental problem in the structural study of biological and organic materials by electron microscopy. Low dose technique has been rather successful to record images of beam sensitive biological crystals out to 5-7Å resolution at room temperature. However, if the specimen is kept at low temperature, the effect of radiation damage would be reduced and it will enhance the feasibility of recording images of biological crystals beyond this resolution limit. We have investigated the radiation damage kinetics of crotoxin complex thin crystal embedded in glucose at both 300K and 4K.The room temperature experiment was conducted with a JEM100CX electron microscope at 100kV, and the low temperature experiment was conducted with the superconducting lens microscope at 220kV, built in Siemens. The experimental method was to record a successive electron diffraction pattern from the same crystal at increasing accumulated doses. These patterns were then digitized with a Perkin Elmer microdensitometer and the intensities of each reflection were integrated with the background being subtracted.

A Simple Cryostat

1961 ◽  
Vol 14 (4) ◽  
pp. 527
Author(s):  
AS Buchanan ◽  
F Creutzberg
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Temperature Range

A simple all-glass cryostat, based on the LeRoy low-temperature fractionating column, is described. It can be used for the separation, purification, and the determination of vapour pressures of volatile and gaseous compounds in the temperature range -196 �C to room temperature. The vapour pressures of boron trimethyl have been remeasured and the reliability of Stock's data is confirmed.

THE EFFECT OF PRESSURE ON THE ELECTRICAL RESISTANCE OF RUBIDIUM

1957 ◽  
Vol 35 (6) ◽  
pp. 720-729 ◽  
Author(s):  
J. S. Dugdale ◽  
J. A. Hulbert
Keyword(s):  
Low Temperature ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Residual Resistivity ◽  
Effect Of Pressure ◽  
Temperature Range ◽  
Fluid State

By using helium in both the solid and the fluid state as a pressure-transmitting medium, it has been possible to measure the resistance of rubidium over the temperature range from 2° K. to room temperature at pressures up to 2500 atmospheres. In particular the effect of pressure on the transition at ~200° K., on the low temperature ideal resistivity, and on the residual resistivity was examined.

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