Gettering of Metallic Impurities in Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
A. Ourmazd ◽  
W. Schröter
Keyword(s):  
Fermi Level ◽  
Microstructural Changes ◽  
Phosphorus Diffusion ◽  
First Results ◽  
Glass Interface ◽  
Phosphosilicate Glass ◽  
Metallic Impurities

ABSTRACTWe report the results of a study of the microstructural changes brought about by the gettering of metallic impurities in silicon. Phosphorus gettering proceeds by the formation of metal disilicides at the silicon/phosphosilicate glass interface. By showing that iron is strongly localized at the interface by phosphorus gettering, we present the first evidence that phosphorus gettering can proceed independently of Fermi level effects. Our first results on the intrinsic gettering of nickel lend support to the notion that the emission of silicon interstitials brought about by phosphorus diffusion (and SiP formation), or intrinsic gettering (SiOx, formation), plays an important role in the gettering process.

N-type doping of germanium epilayer on silicon by ex-situ phosphorus diffusion based on POCl3 phosphosilicate glass

2018 ◽  
Vol 662 ◽  
pp. 1-5 ◽  
Author(s):  
Chan-Hyuck Park ◽  
Han Pan ◽  
Yasuhiko Ishikawa ◽  
Kazumi Wada ◽  
Donghwan Ahn
Keyword(s):  
Ex Situ ◽  
Phosphorus Diffusion ◽  
Phosphosilicate Glass

Phosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond Segregation

2003 ◽  
Vol 95-96 ◽  
pp. 527-538 ◽  
Author(s):  
Wolfgang Schröter ◽  
A. Döller ◽  
A. Zozime ◽  
Vitaly V. Kveder ◽  
Michael Seibt ◽  
...  
Keyword(s):  
Phosphorus Diffusion ◽  
Metallic Impurities

External Gettering and Hydrogenation Effects on Electrical Properties of Multicrystalline Silicon Wafers

1992 ◽  
Vol 262 ◽  
Author(s):  
I. Perichaud ◽  
S. Martinuzzi
Keyword(s):  
Electrical Properties ◽  
Gas Flow ◽  
Minority Carrier ◽  
Silicon Wafers ◽  
Multicrystalline Silicon ◽  
Carrier Diffusion ◽  
Phosphorus Diffusion ◽  
Recombination Centers ◽  
Metallic Impurities

ABSTRACTTo reduce the density of recombination centers, external gettering by phosphorus diffusion from a POCI3 source and hydrogénation were applied to 200 μm thick samples.Gettering was carried out at 850°C or 900°C, for 120 or 240 mn. Hydrogénations result of the annealing of samples at 400°C for 30 mn in gas flow. Thanks to arrays of mesa diodes, it is found that minority carrier diffusion lengths (Ln) are neatly improved by the gettering. The improvements are higher at 900°C than at 850°C, they increase with gettering time and SIMS analyses indicate that they are due to the removing of Fe, Cu and Ni atoms.Hydrogénation enhances Ln values in samples gettered at 850°C and the higher Ln the longer the gettering time. After hydrogénation, the values of Ln in the samples gettered at 850°C are comparable to those measured in samples gettered at 900°C. It is assumed that hydrogen is able to neutralize the activity of impurities which have not been gettered, like oxygen, and also that of residual metallic impurities.

Phosphorus diffusion into silicon from chemically vapour-deposited phosphosilicate glass

1982 ◽  
Vol 87 (4) ◽  
pp. 373-378 ◽  
Author(s):  
G.F. Cerofolini ◽  
M.L. Polignano ◽  
P. Picco ◽  
M. Finetti ◽  
S. Solmi ◽  
...  
Keyword(s):  
Phosphorus Diffusion ◽  
Phosphosilicate Glass

Metallic Impurities in Mono and Multi-crystalline Silicon and Their Gettering by Phosphorus Diffusion

2019 ◽  
Vol 16 (6) ◽  
pp. 179-193 ◽  
Author(s):  
Mohammad B. Shabani ◽  
Takafumi Yamashita ◽  
Etsuoru Morita
Keyword(s):  
Crystalline Silicon ◽  
Phosphorus Diffusion ◽  
Metallic Impurities

Discussion of the Oblique Rotator Model Cases Of 108 Aqr and x Serp.

1976 ◽  
Vol 32 ◽  
pp. 577-588
Author(s):  
C. Mégessier ◽  
V. Khokhlova ◽  
T. Ryabchikova
Keyword(s):  
Mathematical Formulation ◽  
The Other ◽  
Rotator Model ◽  
Oblique Rotator ◽  
First Results

My talk will be on the oblique rotator model which was first proposed by Stibbs (1950), and since received success and further developments. I shall present two different attempts at describing a star according to this model and the first results obtained in the framework of a Russian-French collaboration in order to test the precision of the two methods. The aim is to give the best possible representation of the element distributions on the Ap stellar surfaces. The first method is the mathematical formulation proposed by Deutsch (1958-1970) and applied by Deutsch (1958) to HD 125248, by Pyper (1969) to α2CVn and by Mégessier (1975) to 108 Aqr. The other one was proposed by Khokhlova (1974) and used by her group.

Meridional Circulation, Turbulence, and Diffusion Processes in Stars

1976 ◽  
Vol 32 ◽  
pp. 109-116 ◽  
Author(s):  
S. Vauclair
Keyword(s):  
Convection Zone ◽  
Diffusion Processes ◽  
Meridional Circulation ◽  
Diffusion Time ◽  
Work In Progress ◽  
First Results ◽  
Stellar Envelopes ◽  
And Diffusion ◽  
Turbulence And Diffusion ◽  
Hr Diagram

This paper gives the first results of a work in progress, in collaboration with G. Michaud and G. Vauclair. It is a first attempt to compute the effects of meridional circulation and turbulence on diffusion processes in stellar envelopes. Computations have been made for a 2 Mʘstar, which lies in the Am - δ Scuti region of the HR diagram.Let us recall that in Am stars diffusion cannot occur between the two outer convection zones, contrary to what was assumed by Watson (1970, 1971) and Smith (1971), since they are linked by overshooting (Latour, 1972; Toomre et al., 1975). But diffusion may occur at the bottom of the second convection zone. According to Vauclair et al. (1974), the second convection zone, due to He II ionization, disappears after a time equal to the helium diffusion time, and then diffusion may happen at the bottom of the first convection zone, so that the arguments by Watson and Smith are preserved.

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