Phosphorus Diffusion Using Spin‐On Phosphosilicate‐Glass Source and Halogen Lamps

1985 ◽  
Vol 132 (7) ◽  
pp. 1730-1732 ◽  
Author(s):  
Juri Kato ◽  
Yoshiteru Ono
Keyword(s):  
Phosphorus Diffusion ◽  
Phosphosilicate Glass ◽  
Halogen Lamps

N-type doping of germanium epilayer on silicon by ex-situ phosphorus diffusion based on POCl3 phosphosilicate glass

2018 ◽  
Vol 662 ◽  
pp. 1-5 ◽  
Author(s):  
Chan-Hyuck Park ◽  
Han Pan ◽  
Yasuhiko Ishikawa ◽  
Kazumi Wada ◽  
Donghwan Ahn
Keyword(s):  
Ex Situ ◽  
Phosphorus Diffusion ◽  
Phosphosilicate Glass

Gettering of Metallic Impurities in Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
A. Ourmazd ◽  
W. Schröter
Keyword(s):  
Fermi Level ◽  
Microstructural Changes ◽  
Phosphorus Diffusion ◽  
First Results ◽  
Glass Interface ◽  
Phosphosilicate Glass ◽  
Metallic Impurities

ABSTRACTWe report the results of a study of the microstructural changes brought about by the gettering of metallic impurities in silicon. Phosphorus gettering proceeds by the formation of metal disilicides at the silicon/phosphosilicate glass interface. By showing that iron is strongly localized at the interface by phosphorus gettering, we present the first evidence that phosphorus gettering can proceed independently of Fermi level effects. Our first results on the intrinsic gettering of nickel lend support to the notion that the emission of silicon interstitials brought about by phosphorus diffusion (and SiP formation), or intrinsic gettering (SiOx, formation), plays an important role in the gettering process.

Phosphorus diffusion into silicon from chemically vapour-deposited phosphosilicate glass

1982 ◽  
Vol 87 (4) ◽  
pp. 373-378 ◽  
Author(s):  
G.F. Cerofolini ◽  
M.L. Polignano ◽  
P. Picco ◽  
M. Finetti ◽  
S. Solmi ◽  
...  
Keyword(s):  
Phosphorus Diffusion ◽  
Phosphosilicate Glass

ANNEALING OF HIGH DOSE IMPLANTED GaAs WITH HALOGEN LAMPS

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-247-C5-251 ◽  
Author(s):  
Y. I. Nissim ◽  
B. Joukoff ◽  
J. Sapriel ◽  
N. Duhamel
Keyword(s):  
High Dose ◽  
Halogen Lamps

Analysis of Characteristics of Halogen and LED Automobile Lamps

2020 ◽  
pp. 57-62
Author(s):  
Olga Yu. Kovalenko ◽  
Yulia A. Zhuravlyova
Keyword(s):  
Power Consumption ◽  
Flip Chip ◽  
Weather Conditions ◽  
Luminous Flux ◽  
Luminous Efficacy ◽  
Colour Temperature ◽  
Study Results ◽  
Calculation Results ◽  
Mandatory Rules ◽  
Halogen Lamps

This work contains analysis of characteristics of automobile lamps by Philips, KOITO, ETI flip chip LEDs, Osram, General Electric (GE), Gtinthebox, OSLAMPledbulbs with H1, H4, H7, H11 caps: luminous flux, luminous efficacy, correlated colour temperature. Characteristics of the studied samples are analysed before the operation of the lamps. The analysis of the calculation results allows us to make a conclusion that the values of correlated colour temperature of halogen lamps are close to the parameters declared by manufacturers. The analysis of the study results has shown that, based on actual values of correlated colour temperature, it is not advisable to use LED lamps in unfavourable weather conditions (such as rain, fog, snow). The results of the study demonstrate that there is a slight dispersion of actual values of luminous flux of halogen lamps by different manufacturers. Maximum variation between values of luminous flux of different lamps does not exceed 14 %. The analysis of the measurement results has shown that actual values of luminous flux of all halogen lamps comply with the mandatory rules specified in the UN/ECE Regulation No. 37 and luminous flux of LED lamps exceeds maximum allowable value by more than 8 %. Luminous efficacy of LED lamps is higher than that of halogen lamps: more than 82 lm/W and lower power consumption. The results of the measurements have shown that power consumption of a LED automobile lamp is lower than that of similar halogen lamps by 3 times and their luminous efficacy is higher by 5 times.

scholarly journals Single-Crystal Growth of Sr2RuO4 by the Floating-Zone Method Using an Infrared Image Furnace with Improved Halogen Lamps

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 392
Author(s):  
Naoki Kikugawa ◽  
Dmitry A. Sokolov ◽  
Tohru Nagasawa ◽  
Andrew P. Mackenzie
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Infrared Image ◽  
Single Crystal Growth ◽  
Molten Zone ◽  
Floating Zone ◽  
Unconventional Superconductor ◽  
Zone Method ◽  
Floating Zone Method ◽  
Halogen Lamps

We report the single-crystal growth of the unconventional superconductor Sr2RuO4, on which research has reached a turning point recently. In order to optimize the quality of crystals grown by the floating-zone method using an infrared image furnace, we focus on an improvement of the structure of the filament in the halogen lamps. By reducing the thickness of the total filament, the form of the molten zone was narrowed. More importantly, the molten zone was observed to be more stable during the growth process. Finally, we obtained the crystals with a length of 12 cm. Additionally, the grown crystal has high quality, displaying the 1.5 K transition temperature expected only for the purest crystals. We also discuss the availability of the newly developed halogen lamps.

CMOS-Compatible Protonic Programmable Resistor Based on Phosphosilicate Glass Electrolyte for Analog Deep Learning

Nano Letters ◽  
2021 ◽  
Author(s):  
Murat Onen ◽  
Nicolas Emond ◽  
Ju Li ◽  
Bilge Yildiz ◽  
Jesús A. del Alamo
Keyword(s):  
Deep Learning ◽  
Phosphosilicate Glass ◽  
Cmos Compatible
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