Microcrystalline β-SiC Growth on Si by ECR-CVD at 500°C

1994 ◽  
Vol 358 ◽  
Author(s):  
Kuan-Lun Cheng ◽  
Chih-Chien Liu ◽  
Huang-Chung Cheng ◽  
Chiapyng Lee ◽  
Tri-Rung Yew
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Flow Ratio ◽  
Contact Mode ◽  
Force Microscopy ◽  
The Fourier Transform ◽  
Optimum Flow

ABSTRACTMicrocrystalline β-SiC films were deposited on silicon substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at 500°C utilizing a SiH4-CH4-H2 gas mixture. The effects of two important parameters on film growth, SiH4/CH4 flow ratio and microwave (MW) power, were investigated using X-ray photoelectron spectroscopy (XPS) along with the Fourier transform infrared spectra (FTIR). Results showed that the optimum flow ratio is about 0.5. Under the optimum flow ratio, a large MW power is favorable for the growth of high quality films with an ideal film stoichiometry. Surface morphology inspected by the contact mode atomic force microscopy (AFM) reveals that high MW powers not only improve the film crystallinity but also increase its surface roughness as well.

scholarly journals Influence of the Microstructure and Optical Constants on Plasmonic Properties of Copper Nanolayers

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7292
Author(s):  
Tomasz Rerek ◽  
Beata Derkowska-Zielinska ◽  
Marek Trzcinski ◽  
Robert Szczesny ◽  
Mieczyslaw K. Naparty ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Photoelectron Spectroscopy ◽  
Surface Plasmon Polariton ◽  
Optical Constants ◽  
Localized Surface Plasmon ◽  
Silicon Substrates ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Plasmon Polariton

Copper layers with thicknesses of 12, 25, and 35 nm were thermally evaporated on silicon substrates (Si(100)) with two different deposition rates 0.5 and 5.0 Å/s. The microstructure of produced coatings was studied using atomic force microscopy (AFM) and powder X-ray diffractometer (XRD). Ellipsometric measurements were used to determine the effective dielectric functions <ε˜> as well as the quality indicators of the localized surface plasmon (LSP) and the surface plasmon polariton (SPP). The composition and purity of the produced films were analysed using X-ray photoelectron spectroscopy (XPS).

Low Pressure CVD Growth of AlxTi1-xN Films with Tetrakis- (Dimethylamido)Titanium (Tdmat) and Dimethyl Aluminum Hydride (DMAH) Precursors

1997 ◽  
Vol 495 ◽  
Author(s):  
Y.-M. Sun ◽  
J. Endle ◽  
J. G. Ekerdt ◽  
N. M. Russell ◽  
M. D. Healy ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Aluminum Hydride ◽  
Chemical Vapor ◽  
Initial Growth ◽  
Lower Growth ◽  
Al Content ◽  
Partial Pressures ◽  
Cvd Growth ◽  
C And N

ABSTRACTAlxTi1-xN film growth has been studied by a organometallic chemical vapor deposition and in-situ X-ray photoelectron spectroscopy. Terakis(dimethylamido)titanium (TDMAT) and dimethyl aluminum hydride (DMAH) were used as the Ti, N and Al precursors. AlTiN film growth was observed on SiO2/Si(100) with substrate temperatures between 200 and 400 °C. The Al content in the film is controlled by the ratio of partial pressures of the two precursors in the gas phase. The metal to C to N ratio is approximately constant at 1:1:1 for most conditions studied. The chemical states of Ti, C, and N in AlxTi1-xN and titanium-carbo-nitride (TiCN) films are identical, while the Al chemical state is nitride at low, but increasingly carbidic at high Al concentration. The initial growth rate on SiO2 was significantly suppressed by the presence of DMAH. At lower growth temperatures, the DMAH effect is more severe. Good step coverage was observed for AlxTi1-xN on 0.3 μm vias with a 3:1 aspect ratio.

Vertically aligned graphene nanosheets on silicon using an ionic liquid electrolyte: towards high performance on-chip micro-supercapacitors

2015 ◽  
Vol 3 (38) ◽  
pp. 19254-19262 ◽  
Author(s):  
David Aradilla ◽  
Marc Delaunay ◽  
Saïd Sadki ◽  
Jean-Michel Gérard ◽  
Gérard Bidan
Keyword(s):  
High Performance ◽  
Electron Cyclotron Resonance ◽  
Graphene Nanosheets ◽  
Chemical Vapor ◽  
Liquid Electrolyte ◽  
Silicon Substrates ◽  
Ionic Liquid Electrolyte ◽  
Vertically Aligned ◽  
On Chip ◽  
Resonance Plasma

Vertically oriented graphene nanosheets were synthesized by an alternative and simple approach based on electron cyclotron resonance-plasma enhanced chemical vapor deposition (ECR-CVD) onto highly doped silicon substrates.

Chemical Vapor Deposition of Nickel Ferrite Using Ni C5H5 2 and Fe C5H4C4H9 C5H5

2010 ◽  
Vol 3 (1) ◽  
Author(s):  
Rachel Walker ◽  
M. Singh ◽  
Y. Yang ◽  
C.G. Takoudis
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Nickel Ferrite ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Pressure Chemical ◽  
Oxygen Gas ◽  
The Individual

Chemical vapor deposition was used to deposit thin films of nickel oxide (NiO) and iron oxide (Fe2O3) on silicon substrates. Precursors chosen for this process were nickelocene,Ni(C5H5)2 and n-butylferrocene, Fe(C5H4C4H9)(C5H5), which were oxidized with oxygen gas in a low-pressure chemical vapor deposition system. Following the deposition of the individual metal oxides, the two precursors were used together with the goal of depositing a thin film of nickel ferrite (NiFe2O4). Both co-deposition and cyclic deposition were carried out, and the resulting thin films were analyzed using x-ray photoelectron spectroscopy. This study found that the resulting thin films did not contain NiFe2O4, but were composed of NiO and Fe2O3 in a different ratio. It is suggested that changing various parameters in this experiment can be used to vary this ratio.

Afm/Tem Investigation of Low Temperature Polycrystalline Silicon Grown by ECR-CVD

1995 ◽  
Vol 406 ◽  
Author(s):  
H. L. Hsiao ◽  
K. C. Wang ◽  
L. W. Cheng ◽  
A. B. Yang ◽  
T. R. Yew ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Chemical Vapor ◽  
Plan View ◽  
3 Dimensional ◽  
High Resolution Tem ◽  
Si Films ◽  
Polycrystalline Silicon Films

AbstractThe polycrystalline silicon films were deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) with hydrogen dilution at 250°C and without any thermal annealing. The surface morphology and the microstructure of the poly-Si films are investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM), crosssectional TEM and high resolution TEM (HRTEM). The low temperature poly-Si films deposited by ECR-CVD show a special leaf-like grain shape (plan-view) and an upside-down cone shape (3-dimensional view). The grains in the poly-Si films have preferred orientation of <112> and the longer side of the leaf-like grain is direction and the shorter side is direction. Lattice bending and interruption are found in the films. The arrangement of the atoms on the grains are well ordered, while atoms in the interfacial regions are randomly distributed. A simple grain formation model based on growth rate differences between different planes and etching effect can explain the film growth mechanism and the formation of the special grain geometry.

Preparation and Characterization of Chromium Containing amorphous Hydrogenated Carbon Films (A-C:H/Cr)

1995 ◽  
Vol 388 ◽  
Author(s):  
R. Gampp ◽  
P. Gantenbein ◽  
P. Oelhafen
Keyword(s):  
Chromium Carbide ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Amorphous Hydrogenated Carbon ◽  
High Chemical Stability

AbstractChromium containing amorphous hydrogenated carbon films (a-C:H/Cr) were prepared in a process that combines rf plasma activated chemical vapor deposition of methane and magnetron sputtering of a chromium target. During the deposition the silicon substrates were kept at 200°C and dc biased at -200 V in order to obtain films with high chemical stability which is required for the application as solar selective surfaces. the films with different Cr concentrations (5 to 49 at.%) were characterized by in situ x-ray photoelectron spectroscopy (XPS). Up to 40 at.%, chromium proves to be built into the cermet-like films in the form of chromium carbide clusters. above 40 at.%, chromium is partly metallic. a modification of the a-C:H matrix in the vicinity of the chromium carbide clusters has been observed.

Low Temperature CVD SiC Coated Si Microcomponents for Reduced Scale Engines

2003 ◽  
Author(s):  
M. B. J. Wijesundara ◽  
D. C. Walther ◽  
C. R. Stoldt ◽  
K. Fu ◽  
D. Gao ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Operating Conditions ◽  
Reactive Flow ◽  
Silicon Substrates ◽  
X Ray ◽  
Barrier Films ◽  
High Oxidation Resistance ◽  
Sic Films

The unique operating conditions of micro-thermochemical systems introduce many materials compatibility issues that must be addressed, particularly where thin film coatings are concerned. These issues include oxidation, wear, friction, and thermal stability. This work aims to explore the effectiveness of polycrystalline 3C-SiC films deposited by low temperature chemical vapor deposition on silicon substrates as a means for the remediation of these effects. The chemical structure of the deposited films is examined by X-ray photoelectron spectroscopy and X-ray diffraction techniques. Surface physical characteristics are evaluated by atomic force microcopy as well as by scanning electron microscopy. The structural makeup of these films is characterized both optically and by the sample’s resistance to chemical etching. These barrier films are found to conformally deposit and can therefore be used to coat substrates or individual components, as well as to create highly environmentally resistant sensor elements. Samples are exposed to both a non-reactive flow high temperature source and reactive flow condition (H2–air flame) to determine their survivability. The SiC films are shown to possess a relatively high oxidation resistance when compared to Si.

An Investigation on Surface Sol-Gel Silica Film

2013 ◽  
Vol 787 ◽  
pp. 65-70
Author(s):  
Xin Zhang ◽  
Lei Mao ◽  
Jing Ma
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Sol Gel ◽  
Silica Film ◽  
Growth Type ◽  
Silica Films ◽  
X Ray ◽  
Force Microscopy ◽  
Fourier Transformed Infrared Spectroscopy ◽  
Atomic Force

Ultrathin silica films were grown on polyimide substrates using surface sol-gel method and the film growth process was characterized by ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy, Fourier transformed infrared spectroscopy. The polyimide substrates were pretreated by chemical process for promoting the growth of silica film. On the modified polymide surface, the growth of silica films shows an island-like growth type, but not a lay-by-lay process. Moreover, the deposited silica films are not a strict SiO2 film.

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