scholarly journals Combined Optical, Surface and Nuclear Microscopic Assessment of Porous Silicon Formed in HF-Acetonitrile

1994 ◽  
Vol 358 ◽  
Author(s):  
Z. C. Feng ◽  
Z. Chen ◽  
K. R. Padmanabhan ◽  
K. Li ◽  
A. T. S. Wee ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Photoelectron Spectroscopy ◽  
Light Emission ◽  
Raman Band ◽  
Blue Shift ◽  
Structural Features ◽  
Peak Position ◽  
Optical Surface ◽  
Visible Light Emission

ABSTRACTA new type of HF solution, HF-acetonitrile (MeCN), has been employed to produce 10-30 μm thick porous silicon (P-Si) layers by photoelectrochemical etching of different types of Si wafers, Si(100), Si(111) and polycrystalline Si, with different resistivities. A combined optical, surface and nuclear microscopic assessment of these P-Si layers was performed using photoluminescence (PL), Raman scattering, X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). The PL emission intensities, Raman line shapes and structural features are strongly dependent on the properties of the substrates such as the crystallinity and resistivity of the Si wafers used for forming P-Si. With increasing resisitivity of the Si(100) wafers, the resulting P-Si layers show a slight blue-shift of their visible light emission peak energy, an up-shift of the peak position and a narrowing of the band width of the dominant Raman band, and a decrease in the amount of residual elemental Si on the surface. Those Si(l 11) wafers, etched in HF-MeCN, showed no porous structures and no visible light emission.

Visible light emission from apnjunction of porous silicon and microcrystalline silicon carbide

1993 ◽  
Vol 63 (9) ◽  
pp. 1209-1210 ◽  
Author(s):  
Toshiro Futagi ◽  
Takahiro Matsumoto ◽  
Masakazu Katsuno ◽  
Yasumitsu Ohta ◽  
Hidenori Mimura ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Microcrystalline Silicon ◽  
Visible Light Emission

Bright visible light emission from electro-oxidized porous silicon

1993 ◽  
pp. 593-602
Author(s):  
J.C. Vial ◽  
S. Billat ◽  
A. Bsiesy ◽  
G. Fishman ◽  
F. Gaspard ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Oxidized Porous Silicon ◽  
Visible Light Emission

ESR Study of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
W. Y. Cheung ◽  
S. P. Wong ◽  
I. H. Wilson ◽  
C. F. Kan ◽  
S. K. Hark
Keyword(s):  
Porous Silicon ◽  
Spin Density ◽  
Light Emission ◽  
Blue Shift ◽  
Esr Spectra ◽  
Peak Position ◽  
Silicon Substrates ◽  
Post Annealing ◽  
G Value ◽  
P Type

ABSTRACTA detailed ESR study has been performed on porous silicon on both <100> and <111> p-type silicon substrates prepared using anodization in HF under a range of conditions and the results are correlated with the light emission properties. It is found that the ESR spectra are dependent upon the orientation of the samples. The ESR defect centers are identified to be the Pb centers or Pbo centers of the Si-SiO2 system from the g-value anisotropy maps. The variation of the spin density Ns with annealing conditions has also been studied for samples annealed either in nitrogen or oxygen ambient at 200°C for various time intervals. It is concluded that the increase or decrease of Ns are due to the generation or elimination of the Pb or Pbo centers in conjunction with the oxidation process during annealing. From PL study of these samples, it is found that there is no simple correlation between the spin density and the PL intensity. However, a blue shift in the PL peak position was observed both in samples after a post-annealing etch in HF solution, and in samples annealed in oxygen without a post-annealing etch. This blue shift supports the quantum confinement model of light emission from porous silicon.

Bright visible light emission from electro-oxidized porous silicon

1993 ◽  
Vol 185 (1-4) ◽  
pp. 593-602 ◽  
Author(s):  
J.C. Vial ◽  
S. Billat ◽  
A. Bsiesy ◽  
G. Fishman ◽  
F. Gaspard ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Oxidized Porous Silicon ◽  
Visible Light Emission

Mechanisms of visible-light emission from electro-oxidized porous silicon

1992 ◽  
Vol 45 (24) ◽  
pp. 14171-14176 ◽  
Author(s):  
J. C. Vial ◽  
A. Bsiesy ◽  
F. Gaspard ◽  
R. Hérino ◽  
M. Ligeon ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Oxidized Porous Silicon ◽  
Visible Light Emission

Visible light emission from a porous silicon/solution diode

1992 ◽  
Vol 61 (1) ◽  
pp. 108-110 ◽  
Author(s):  
P. M. M. C. Bressers ◽  
J. W. J. Knapen ◽  
E. A. Meulenkamp ◽  
J. J. Kelly
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Visible Light Emission

Visible light emission from electro-oxidized porous silicon

1992 ◽  
Vol T45 ◽  
pp. 300-304 ◽  
Author(s):  
R Herino ◽  
S Billat ◽  
A Bsiesy ◽  
F Gaspard ◽  
M Ligeon ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Oxidized Porous Silicon ◽  
Visible Light Emission

Visible Light Emission from Porous Silicon Examined by Photoluminescence and Raman Spectroscopy

1992 ◽  
Vol 283 ◽  
Author(s):  
Terry R. Guilinger ◽  
Michael J. Kelly ◽  
David R. Tallant ◽  
David A. Redman ◽  
David M. Follstaedt
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Hydrofluoric Acid ◽  
Light Emission ◽  
Fold Increase ◽  
Blue Shift ◽  
Ex Situ ◽  
Pl Spectra ◽  
Light Spectra

ABSTRACTWe describe the acquisition of Raman and photoluminescence (PL) spectra on porous silicon (PS) samples that emit visible light. Spectra were acquired in both ex situ experiments (after exposure to air) and in situ experiments (with the PS covered either with the hydrofluoric acid electrolyte used in the formation process or water). Our results generally show a correlation of blue-shifted PL with increased oxidation. In one set of ex situ experiments, however, we observed an inconsistency in the shift of the wavelengthof maximum luminescence intensity for PS samples that exhibit oxygenated character in the Raman spectra. A higher anodization current density produced a red shift in the PL spectra in one experiment, while chemical dissolution of the PS by hydrofluoric acid produced the well-known blue shift in the other case. In two in situ experiments, we observed very weak and red-shifted PL for a PS sample immersed in HF (compared to the same sample measured later in air) while in another we immersed air-exposed PS in water and observed a 15-fold increase in PL intensity along with a blue shift in the luminescence maximum.

scholarly journals Visible Light Emission from Porous Silicon

1992 ◽  
Vol 82 (5) ◽  
pp. 914-918 ◽  
Author(s):  
M. Bugajski ◽  
M. Wesołowski ◽  
W. Lewandowski ◽  
J. Ornoch ◽  
J. Kątcki
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Visible Light Emission
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