Visible light emission from apnjunction of porous silicon and microcrystalline silicon carbide

1993 ◽  
Vol 63 (9) ◽  
pp. 1209-1210 ◽  
Author(s):  
Toshiro Futagi ◽  
Takahiro Matsumoto ◽  
Masakazu Katsuno ◽  
Yasumitsu Ohta ◽  
Hidenori Mimura ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Microcrystalline Silicon ◽  
Visible Light Emission

Bright visible light emission from electro-oxidized porous silicon

1993 ◽  
pp. 593-602
Author(s):  
J.C. Vial ◽  
S. Billat ◽  
A. Bsiesy ◽  
G. Fishman ◽  
F. Gaspard ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Oxidized Porous Silicon ◽  
Visible Light Emission

Bright visible light emission from electro-oxidized porous silicon

1993 ◽  
Vol 185 (1-4) ◽  
pp. 593-602 ◽  
Author(s):  
J.C. Vial ◽  
S. Billat ◽  
A. Bsiesy ◽  
G. Fishman ◽  
F. Gaspard ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Oxidized Porous Silicon ◽  
Visible Light Emission

Mechanisms of visible-light emission from electro-oxidized porous silicon

1992 ◽  
Vol 45 (24) ◽  
pp. 14171-14176 ◽  
Author(s):  
J. C. Vial ◽  
A. Bsiesy ◽  
F. Gaspard ◽  
R. Hérino ◽  
M. Ligeon ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Oxidized Porous Silicon ◽  
Visible Light Emission

Visible light emission from a porous silicon/solution diode

1992 ◽  
Vol 61 (1) ◽  
pp. 108-110 ◽  
Author(s):  
P. M. M. C. Bressers ◽  
J. W. J. Knapen ◽  
E. A. Meulenkamp ◽  
J. J. Kelly
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Visible Light Emission

scholarly journals Combined Optical, Surface and Nuclear Microscopic Assessment of Porous Silicon Formed in HF-Acetonitrile

1994 ◽  
Vol 358 ◽  
Author(s):  
Z. C. Feng ◽  
Z. Chen ◽  
K. R. Padmanabhan ◽  
K. Li ◽  
A. T. S. Wee ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Photoelectron Spectroscopy ◽  
Light Emission ◽  
Raman Band ◽  
Blue Shift ◽  
Structural Features ◽  
Peak Position ◽  
Optical Surface ◽  
Visible Light Emission

ABSTRACTA new type of HF solution, HF-acetonitrile (MeCN), has been employed to produce 10-30 μm thick porous silicon (P-Si) layers by photoelectrochemical etching of different types of Si wafers, Si(100), Si(111) and polycrystalline Si, with different resistivities. A combined optical, surface and nuclear microscopic assessment of these P-Si layers was performed using photoluminescence (PL), Raman scattering, X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). The PL emission intensities, Raman line shapes and structural features are strongly dependent on the properties of the substrates such as the crystallinity and resistivity of the Si wafers used for forming P-Si. With increasing resisitivity of the Si(100) wafers, the resulting P-Si layers show a slight blue-shift of their visible light emission peak energy, an up-shift of the peak position and a narrowing of the band width of the dominant Raman band, and a decrease in the amount of residual elemental Si on the surface. Those Si(l 11) wafers, etched in HF-MeCN, showed no porous structures and no visible light emission.

Visible light emission from electro-oxidized porous silicon

1992 ◽  
Vol T45 ◽  
pp. 300-304 ◽  
Author(s):  
R Herino ◽  
S Billat ◽  
A Bsiesy ◽  
F Gaspard ◽  
M Ligeon ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Oxidized Porous Silicon ◽  
Visible Light Emission

scholarly journals Visible Light Emission from Porous Silicon

1992 ◽  
Vol 82 (5) ◽  
pp. 914-918 ◽  
Author(s):  
M. Bugajski ◽  
M. Wesołowski ◽  
W. Lewandowski ◽  
J. Ornoch ◽  
J. Kątcki
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Visible Light Emission
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