The Stability of MoSi2 Films in Vacuum and Oxidizing Atmospheres

1994 ◽  
Vol 357 ◽  
Author(s):  
L.E. Kolaya ◽  
D.J. Duquette ◽  
J.B. Hudson
Keyword(s):  
Mass Loss ◽  
Heating Process ◽  
X Ray Diffraction ◽  
Post Heat Treatment ◽  
Sapphire Substrates ◽  
Approximate Composition ◽  
Treatment Analysis ◽  
Sputter Deposited ◽  
The Stability ◽  
Deposited Films

AbstractThe stability of MoSi2, films with respect to mass loss at high temperature has been investigated in vacuum and dry air environments at temperatures up to 1300° C. Samples were sputter deposited films of approximate composition MoSi3, on sapphire substrates. Post heat treatment analysis by X-ray diffraction, scanning electron microscopy, and electron microprobe analysis indicated that the films recrystallized, and that phase separation of the excess silicon from the MoSi2, occurred early in the heating process. With continued heating, silicon was lost from the films by evaporation, leading to the conversion of the films to Mo5Si3. The rate of mass loss was much less in the air environment due to the formation of a SiO2, layer which served as a diffusion barrier to silicon. Evidence of a reaction along the MoSi2,/A12O3 interface was observed visually, but could not be detected chemically.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Aging Effects on the Durability of Tantalum Nitride Films

1997 ◽  
Vol 505 ◽  
Author(s):  
N. R. Moody ◽  
D. Medlin ◽  
D. Boehme ◽  
D. Norwood
Keyword(s):  
Sputter Deposition ◽  
Tantalum Nitride ◽  
X Ray Diffraction ◽  
Aging Effects ◽  
Subsequent Aging ◽  
X Ray ◽  
Sputter Deposited ◽  
Compressive Residual Stresses ◽  
Deposited Films

ABSTRACTIn this study, nanoindentation and nanoscratch testing were used to determine the effects of annealing and long term aging on the properties and fracture resistance of thin tantalum nitride resistor films on aluminum nitride substrates. These films were sputter-deposited to a thickness of 440 nm. Some films were left in the as-deposited condition while others were annealed or annealed and then aged. X-ray diffraction revealed that sputter deposition created high compressive residual stresses in the as-deposited films which were partially relieved by annealing. Subsequent aging of the annealed films had no effect on residual stress levels. Nanoindentation showed that mechanical properties were unchanged after annealing and after annealing and aging. However, nanoscratch testing showed that annealing markedly reduced the susceptibility to catastrophic failure with no further changes discernible after aging.

Effects of Substrate Pre-deposition Annealing and Deposition Parameters on the Properties of RF Sputter-deposited ZnO Films

2012 ◽  
Vol 1394 ◽  
Author(s):  
T. N. Oder ◽  
M. McMaster ◽  
A. Smith ◽  
N. Velpukonda ◽  
D. Sternagle
Keyword(s):  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Sapphire Substrates ◽  
Deposition Parameters ◽  
Ultra High Purity ◽  
Luminescence Peak ◽  
Sputter Deposited ◽  
P Type

ABSTRACTZinc Oxide thin films were deposited on sapphire substrates by radio frequency (RF) magnetron sputtering from an ultra-high purity ZnO solid target. The ZnO films were deposited on sapphire substrates heated in oxygen and/or in vacuum prior to deposition. Additional parameters investigated included the substrate temperature varied from 25 °C to 600 °C, the deposition gas pressure varied from 5 mTorr to 40 mTorr and the gas flow rate varied from 5 to 30 standard cubic centimeter per minute (sccm). The resulting films were annealed using a rapid thermal processor in N2 gas at 900 °C for 5 min. Analyses carried out using photoluminescence spectroscopy (PL) and X-ray diffraction (XRD) measurements indicate that films deposited at 300 °C using Ar:O2 (1:1) had the best optical and microstructure qualities. Pre-heating the sapphire substrate in oxygen prior to deposition was found to create a smoother sapphire surface, and this produced a ZnO film with greatly improved qualities. This film had a luminescence peak at 3.362 eV with a full-width-half maximum (FWHM) value of 15.3 meV when measured at 11 K. The XRD 2θ-scans had peaks at 34.4° with the best FWHM value of only 0.10°. Production of high quality ZnO materials is a necessary step towards realizing highly conductive p-type doped ZnO materials which is currently a major goal in research efforts on ZnO.

Strained Linbo3/Sapphire Heterostructures Grown by Pulsed Laser Deposition

1995 ◽  
Vol 397 ◽  
Author(s):  
Yoshihiko Shibata ◽  
Naohiro Kuze ◽  
Masahiro Matsui ◽  
Masaki Kanai ◽  
Tomoji Kawai
Keyword(s):  
Diffraction Analysis ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Thermal Expansion Coefficients ◽  
Transmission Electron ◽  
Expansion Coefficients ◽  
The Difference ◽  
Deposited Films

ABSTRACTThin LiNbO3 films are deposited on (001) sapphire substrates by Ar F pulsed laser ablation. The films are evaluated by X-ray diffraction analysis at various temperatures, as well as high-resolution transmission electron microscopy (TEM). The deposited films are highly epitaxial but that are strained, that is, the a-axis is longer and the c-axis is shorter than those of LiNbO3 single crystals. X-ray diffraction analysis at deposition temperature, as well as TEM show that the strain is caused by the difference in thermal expansion coefficients between LiNbO3 and sapphire substrates.

Tribological Properties of Sputter-Deposited MoS2 Films Containing Titanium

2005 ◽  
Vol 890 ◽  
Author(s):  
James Krzanowski ◽  
Dyumani Nunna
Keyword(s):  
Tribological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Frictional Properties ◽  
Crystalline Films ◽  
Low Humidity ◽  
Sputter Deposited ◽  
Pin On Disk ◽  
Deposited Films ◽  
Ti Films

ABSTRACTThe tribological properties of sputter-deposited MoS2 and MoS2-Ti films were investigated in this study. The deposited films were characterized using microprobe analysis for composition and x-ray diffraction (XRD) for structure. The frictional properties of the films were examined using a pin-on-disk (POD) with counterfaces of 440C steel, aluminum, tungsten carbide and alumina. The tests were run under low (25%), medium (50%) and high (70%) humidity levels. MoS2 films without Ti were first examined under cyclic humidity conditions between 25 and 50% R/H. The results showed that for steel, WC and alumina counterfaces, the effect of the higher humidity was to increase the friction, but lower friction could be recovered when the humidity was reduced back to 25%. For films containing Ti, the best results were obtained at a concentration of 20 at. % Ti. These films performed well for steel and WC counterfaces, but poorly against aluminum. The effect of deposition temperature (up to 450oC) was examined for MoS2 and MoS2-5% Ti films. Higher temperatures yielded more crystalline films, but the addition of Ti partially countered this effect. The POD test showed that at medium humidity levels the friction decreased with temperature, but increased slightly when tested under low humidity. In all cases, the 5% Ti-containing films had a fiction coefficient of about 0.1 below that for films without Ti.

Plasma Etching Characteristics of Sputtered Tungsten Films

1992 ◽  
Vol 260 ◽  
Author(s):  
S. Franssila ◽  
J. M. Molarius ◽  
J. Saarilahti
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
Nuclear Reaction Analysis ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
Resistivity Measurements ◽  
Sputter Deposited ◽  
The Relationship ◽  
Deposited Films

ABSTRACTThe relationship between microstructure of tungsten thin films and plasma etching properties has been studied. Rutherford backscattering, nuclear reaction analysis 16O(α,α)16O, X-ray diffraction, and resistivity measurements have been used to characterize the sputter deposited films. Independent of deposition pressure, the films were all high density, low oxygen (<1 at%), low resistivity and bccot-phase. Etch rate differences of 40% were measured in pure SF6, whereas only 10% differences were seen in SF6/Cl2 and SF6/O2BCi3 plasmas. Intentional oxygen doping (up to 2 at-%) increases the etch rate in pure SF6 plasma by 75%, wherasthe etch rate in SF6/O2/BCl3 plasma only increases 25%. The role of film density (porosity) and oxygen incorporation on etching mechanism are discussed.

Residual stress and microstructural evolution in thin film materials for a micro solid oxide fuel cell (SOFC).

2004 ◽  
Vol 854 ◽  
Author(s):  
David Quinn ◽  
S. Mark Spearing ◽  
Brian L. Wardle
Keyword(s):  
Residual Stress ◽  
Stress Component ◽  
Solid Oxide ◽  
Intrinsic Stress ◽  
Oxide Fuel ◽  
X Ray Diffraction ◽  
Membrane Structures ◽  
X Ray ◽  
Sputter Deposited ◽  
The Stability

ABSTRACTThe stability of multilayered membrane structures is a major challenge in the development of microfabricated solid oxide fuel cells (SOFC). The work presented here explores residual stress in sputter-deposited yttria stabilized zirconia (YSZ) thin films (5nm – 1000nm thickness) as a function of deposition pressure and substrate temperature. The results indicate variations in intrinsic stress from ∼0.5GPa compressive to mildly tensile (∼50 MPa). Microstructure is characterized by x-ray diffraction (XRD). The evolution of intrinsic stress with temperature is investigated by thermally cycling YSZ films deposited on silicon wafers. Observed changes of 100s of MPa in the intrinsic stress component of the film serve as indicators of possible changes in microstructure. Such changes in microstructure are subsequently characterized using x-ray diffraction of as-deposited and annealed films. Correlations with relevant mechanisms and models of residual stress evolution are discussed. Finally, use of such residual stress data in the fabrication and design of mechanically stable multilayered membranes for micro SOFC devices is discussed.

RBS and TEM Analysis of Ta Silicides on GaAs

1983 ◽  
Vol 25 ◽  
Author(s):  
K.L. Kavanagh ◽  
S.H. Chen ◽  
C.J. Palmstrom ◽  
C.B. Carter
Keyword(s):  
Electron Beam ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Sputter Deposited ◽  
Deposited Films

ABSTRACTElectron-beam and sputter-deposited Ta silicides on GaAs were annealed in an As2 overpressure ambient to temperatures as high as 920°C for 20mim. The films were then characterized with RBS, cross-sectional TEM and both electron and x-ray diffraction. The morphology of sputtered TaSi2/GaAs interfaces did not change, however, some interaction was detected at electron-beam deposited GaAs/silicide interfaces. Arsenic in-diffusion was detected at temperatures above 800°C and it was found to be dependent on the stoichiometry of the films. Arsenic diffusion into Si-rich electron-beam and sputter deposited films was low, whereas significantly more As diffused into the Ta-rich silicide. Some indium (3×l015atoms/cm2), from the InAs used as the source of As2overpressure, was observed to accumulate at all GaAs/silicide interfaces at temperatures above 800°C.

Stability of Sputter Deposited Al-Cu Bilayers on SiO2.

1992 ◽  
Vol 260 ◽  
Author(s):  
R. Nandan ◽  
S. P. Murarka ◽  
A. Pant ◽  
C. Shepard ◽  
W. A. Lanford
Keyword(s):  
Electrical Performance ◽  
X Ray Diffraction ◽  
Adhesion Promoter ◽  
Mos Capacitors ◽  
Rutherford Back Scattering ◽  
Cu Metallization ◽  
Bilayer Films ◽  
Sputter Deposited ◽  
The Stability ◽  
And Diffusion

ABSTRACTAn investigation of the stability and electrical characteristics of Aluminum-Copper bilayer films on SiO2 has been carried out. In this investigation, a thin layer of sputtered aluminum is used as a diffusion barrier/adhesion promoter between the copper and SiO2. The electrical performance of these structures when subjected to thermal cycles and applied biases is determined. The interactions and diffusion of copper through aluminum into SiO2 was investigated using both blanket films and MOS capacitors. Results are compared with those obtained from structures of Al and Cu metallization on SiO2. Samples were annealed at various temperatures in the range of 200°C to 500°C. Analysis using four-point probe resistivity measurements, X-ray diffraction, and Rutherford Back Scattering were carried out. MOS capacitors are used to establish performance under applied bias. Capacitance-Voltage characteristics of formed alloys are discussed. These results will be presented and discussed in view of the applicability of aluminum as the adhesion promoter for copper interconnections on SiO2.

Structural Properties of Sputter-Deposited ZnO Thin Films Depending on the Substrate Materials

2005 ◽  
Vol 475-479 ◽  
pp. 1825-1828
Author(s):  
Ju Hyun Myung ◽  
Nam Ho Kim ◽  
Hyoun Woo Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Sapphire Substrates ◽  
Sputter Deposited

We have demonstrated the growth of ZnO thin films with c-axis orientation at room temperature on various substrates such as Si(100), SiO2, and sapphire by the r.f. magnetron sputtering method. X-ray diffraction (XRD) and scanning electron microscopy altogether indicated that the larger grain size and the higher crystallinity were attained when the ZnO films were deposited on sapphire substrates, compared to the films on Si or SiO2 substrates. The c-axis lattice constant decreased by thermal annealing for the ZnO films deposited on Si or SiO2 substrates, while increased by the thermal annealing for the ZnO films grown on sapphire substrates.

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