Plasma Etching Characteristics of Sputtered Tungsten Films

1992 ◽  
Vol 260 ◽  
Author(s):  
S. Franssila ◽  
J. M. Molarius ◽  
J. Saarilahti
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
Nuclear Reaction Analysis ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
Resistivity Measurements ◽  
Sputter Deposited ◽  
The Relationship ◽  
Deposited Films

ABSTRACTThe relationship between microstructure of tungsten thin films and plasma etching properties has been studied. Rutherford backscattering, nuclear reaction analysis 16O(α,α)16O, X-ray diffraction, and resistivity measurements have been used to characterize the sputter deposited films. Independent of deposition pressure, the films were all high density, low oxygen (<1 at%), low resistivity and bccot-phase. Etch rate differences of 40% were measured in pure SF6, whereas only 10% differences were seen in SF6/Cl2 and SF6/O2BCi3 plasmas. Intentional oxygen doping (up to 2 at-%) increases the etch rate in pure SF6 plasma by 75%, wherasthe etch rate in SF6/O2/BCl3 plasma only increases 25%. The role of film density (porosity) and oxygen incorporation on etching mechanism are discussed.

scholarly journals Contributions of Electron Microscopy to the Understanding of Reactions on Compound Semiconductor Surfaces

1985 ◽  
Vol 62 ◽  
Author(s):  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Compound Semiconductor ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Glancing Angle ◽  
Semiconductor Substrates ◽  
The Relationship ◽  
Minimum Quality

ABSTRACTReacted films on compound semiconductor substrates present challenging materials characterization problems which often require the application of transmission electron microscopy (TEM) techniques. In this paper, both the problem - solving potential of the TEM techniques and the limits imposed by preparation of thin film/compound semiconductor TEM specimens are discussed. Studies of the Ni/GaAs, CuCl(aq)/CdS and Pd/GaAs reactions exemplify the role of TEM in identifying and determining the spatial distribution of interface - stabilized polymorphs and new ternary phases (e.g. tetragonal Cu2S, Ni3GaAs and PdxGaAs). These examples also serve to clarify the relationship between TEM and complementary analysis techniques such as Rutherford backscattering spectrometry, Auger electron spectroscopy and glancing-angle x-ray diffraction. In particular, it is argued that a combination of (1) high-spatial-resolution information obtained by TEM and (2) an indication of the “average” behavior provided by data from a complementary characterization technique provide the minimum quality and quantity of data necessary to understand most reactions on compound semiconductor substrates.

Aging Effects on the Durability of Tantalum Nitride Films

1997 ◽  
Vol 505 ◽  
Author(s):  
N. R. Moody ◽  
D. Medlin ◽  
D. Boehme ◽  
D. Norwood
Keyword(s):  
Sputter Deposition ◽  
Tantalum Nitride ◽  
X Ray Diffraction ◽  
Aging Effects ◽  
Subsequent Aging ◽  
X Ray ◽  
Sputter Deposited ◽  
Compressive Residual Stresses ◽  
Deposited Films

ABSTRACTIn this study, nanoindentation and nanoscratch testing were used to determine the effects of annealing and long term aging on the properties and fracture resistance of thin tantalum nitride resistor films on aluminum nitride substrates. These films were sputter-deposited to a thickness of 440 nm. Some films were left in the as-deposited condition while others were annealed or annealed and then aged. X-ray diffraction revealed that sputter deposition created high compressive residual stresses in the as-deposited films which were partially relieved by annealing. Subsequent aging of the annealed films had no effect on residual stress levels. Nanoindentation showed that mechanical properties were unchanged after annealing and after annealing and aging. However, nanoscratch testing showed that annealing markedly reduced the susceptibility to catastrophic failure with no further changes discernible after aging.

Tribological Properties of Sputter-Deposited MoS2 Films Containing Titanium

2005 ◽  
Vol 890 ◽  
Author(s):  
James Krzanowski ◽  
Dyumani Nunna
Keyword(s):  
Tribological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Frictional Properties ◽  
Crystalline Films ◽  
Low Humidity ◽  
Sputter Deposited ◽  
Pin On Disk ◽  
Deposited Films ◽  
Ti Films

ABSTRACTThe tribological properties of sputter-deposited MoS2 and MoS2-Ti films were investigated in this study. The deposited films were characterized using microprobe analysis for composition and x-ray diffraction (XRD) for structure. The frictional properties of the films were examined using a pin-on-disk (POD) with counterfaces of 440C steel, aluminum, tungsten carbide and alumina. The tests were run under low (25%), medium (50%) and high (70%) humidity levels. MoS2 films without Ti were first examined under cyclic humidity conditions between 25 and 50% R/H. The results showed that for steel, WC and alumina counterfaces, the effect of the higher humidity was to increase the friction, but lower friction could be recovered when the humidity was reduced back to 25%. For films containing Ti, the best results were obtained at a concentration of 20 at. % Ti. These films performed well for steel and WC counterfaces, but poorly against aluminum. The effect of deposition temperature (up to 450oC) was examined for MoS2 and MoS2-5% Ti films. Higher temperatures yielded more crystalline films, but the addition of Ti partially countered this effect. The POD test showed that at medium humidity levels the friction decreased with temperature, but increased slightly when tested under low humidity. In all cases, the 5% Ti-containing films had a fiction coefficient of about 0.1 below that for films without Ti.

The Stability of MoSi2 Films in Vacuum and Oxidizing Atmospheres

1994 ◽  
Vol 357 ◽  
Author(s):  
L.E. Kolaya ◽  
D.J. Duquette ◽  
J.B. Hudson
Keyword(s):  
Mass Loss ◽  
Heating Process ◽  
X Ray Diffraction ◽  
Post Heat Treatment ◽  
Sapphire Substrates ◽  
Approximate Composition ◽  
Treatment Analysis ◽  
Sputter Deposited ◽  
The Stability ◽  
Deposited Films

AbstractThe stability of MoSi2, films with respect to mass loss at high temperature has been investigated in vacuum and dry air environments at temperatures up to 1300° C. Samples were sputter deposited films of approximate composition MoSi3, on sapphire substrates. Post heat treatment analysis by X-ray diffraction, scanning electron microscopy, and electron microprobe analysis indicated that the films recrystallized, and that phase separation of the excess silicon from the MoSi2, occurred early in the heating process. With continued heating, silicon was lost from the films by evaporation, leading to the conversion of the films to Mo5Si3. The rate of mass loss was much less in the air environment due to the formation of a SiO2, layer which served as a diffusion barrier to silicon. Evidence of a reaction along the MoSi2,/A12O3 interface was observed visually, but could not be detected chemically.

RBS and TEM Analysis of Ta Silicides on GaAs

1983 ◽  
Vol 25 ◽  
Author(s):  
K.L. Kavanagh ◽  
S.H. Chen ◽  
C.J. Palmstrom ◽  
C.B. Carter
Keyword(s):  
Electron Beam ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Sputter Deposited ◽  
Deposited Films

ABSTRACTElectron-beam and sputter-deposited Ta silicides on GaAs were annealed in an As2 overpressure ambient to temperatures as high as 920°C for 20mim. The films were then characterized with RBS, cross-sectional TEM and both electron and x-ray diffraction. The morphology of sputtered TaSi2/GaAs interfaces did not change, however, some interaction was detected at electron-beam deposited GaAs/silicide interfaces. Arsenic in-diffusion was detected at temperatures above 800°C and it was found to be dependent on the stoichiometry of the films. Arsenic diffusion into Si-rich electron-beam and sputter deposited films was low, whereas significantly more As diffused into the Ta-rich silicide. Some indium (3×l015atoms/cm2), from the InAs used as the source of As2overpressure, was observed to accumulate at all GaAs/silicide interfaces at temperatures above 800°C.

The Formation of Rugged Surface Polycrystalline Silicon Using Cl2/O2 Plasmas: The Role of Oxygen

1991 ◽  
Vol 236 ◽  
Author(s):  
N. Ozawa ◽  
N. Ikegami ◽  
Y. Miyakawa ◽  
J. Kanamori
Keyword(s):  
Plasma Etching ◽  
Emission Spectroscopy ◽  
Polycrystalline Silicon ◽  
Etch Rate ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Rugged Surface ◽  
Phosphorus Doped ◽  
O2 Plasma

AbstractThe formation of rugged surface polycrystalline silicon (poly-Si) using Cl2/O2 plasmas in which O2 concentration is 0-10 % has been investigated. Phosphorus doped poly-Si (n+ poly-Si) surface is rugged by the plasma etching under the condition that O2 concentration are 1-5 % at 10 Pa, but is not rugged at 1.3 Pa. On the other hand, undoped poly-Si surface is not rugged in Cl2 /0-10 %O2 plasmas at 10 Pa. Oxygen and phosphorus play an important role in the ruggedness of n+ poly-Si. The ruggedness mechanism has been investigated using scanning electron microscope, optical emission spectroscopy and mass spectrometry. The ruggedness mechanism is suggested that in Cl2 plasmas added a small amount of oxygen, n+ poly-Si is etched selectively at the grain boundaries which contain more phosphorus than in grains. The Cl emission intensity and n+ poly-Si etch rate reach maximum in Cl2/3 %O2 plasma at 1.3 Pa. Oxygen has a possibility of promoting SiCIx dissociation and increasing Cl radicals.

scholarly journals Resistivity Studies On Mn Site Substituted LCMSO Manganites

2015 ◽  
Vol 4 (3) ◽  
pp. 90
Author(s):  
Bharat R. Kataria ◽  
Chirag Savaliya ◽  
J. H. Markna
Keyword(s):  
Structural Phase ◽  
Structural Disorder ◽  
Measurement Range ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Size Mismatch ◽  
Resistivity Measurements ◽  
Site Disorder ◽  
Xrd Patterns

Effect of Mn-site disorder in La<sub>0.67</sub>Ca<sub>0.33</sub>Mn<sub>1-x</sub>Sb<sub>x</sub>O<sub>3</sub> (LCMSO) created by the substitution of Sb<sup>5+</sup> at Mn-site is studied through X-ray diffraction (XRD) and temperature dependent resistivity measurements to identify the role of size mismatch at Mn-site and their resistivity property correlations. XRD patterns collected at room temperature for all the LCMSO samples reveal single phasic nature without any detectable impurities within the measurement range studied. XRD data shows that all the samples possess orthorhombic structure without any structural phase transition. Variation in resistivity with Sb<sup>5+</sup> content has been discussed in detail in the context of modifications in the structural and magnetic lattices and structural disorder.

Choosing a Markov blanket

2020 ◽  
Vol 43 ◽  
Author(s):  
Thomas Parr
Keyword(s):  
Markov Blanket ◽  
Target Article ◽  
The Relationship

Abstract This commentary focuses upon the relationship between two themes in the target article: the ways in which a Markov blanket may be defined and the role of precision and salience in mediating the interactions between what is internal and external to a system. These each rest upon the different perspectives we might take while “choosing” a Markov blanket.

Direct Observation of the Diffusionless β → β + ω Transformation in Titanium Alloys

1971 ◽  
Vol 29 ◽  
pp. 122-123
Author(s):  
N. E. Paton ◽  
D. de Fontaine ◽  
J. C. Williams
Keyword(s):  
Electron Microscope ◽  
Titanium Alloys ◽  
Direct Observation ◽  
Dark Field ◽  
X Ray Diffraction ◽  
Resistivity Measurements ◽  
Selected Area Electron Diffraction ◽  
Ti Alloys ◽  
Thin Foils ◽  
Field Device

The electron microscope has been used to study the diffusionless β → β + ω transformation occurring in certain titanium alloys at low temperatures. Evidence for such a transformation was obtained by Cometto et al by means of x-ray diffraction and resistivity measurements on a Ti-Nb alloy. The present work shows that this type of transformation can occur in several Ti alloys of suitable composition, and some of the details of the transformation are elucidated by means of direct observation in the electron microscope.Thin foils were examined in a Philips EM-300 electron microscope equipped with a uniaxial tilt, liquid nitrogen cooled, cold stage and a high resolution dark field device. Selected area electron diffraction was used to identify the phases present and the ω-phase was imaged in dark field by using a (101)ω reflection. Alloys were water quenched from 950°C, thinned, and mounted between copper grids to minimize temperature gradients in the foil.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

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