Stress in Giant Magnetoresistive Ni66Fe16Co18/Ag Multilayer thin Films

1994 ◽  
Vol 356 ◽  
Author(s):  
J.D. Jarratt ◽  
J.A. Barnard

AbstractThin film stress has been measured in (Ni66Fe16Co18 25 Å/Ag 50 Å) multilayer thin films that exhibit annealing-induced giant magnetoresistance (GMR) known as ‘discontinuous’ GMR1. This GMR results when NiFeCo layers are broken up into discontinuous ferromagnetic islands or platelets by immiscible Ag atom grain boundary diffusion normal to the film plane. As-deposited films display no GMR and are in compression. An MR value of 5 % with a relatively sharp profile can be induced in a ten bilayer sample annealed at 400°C for 15 min. Annealing generally results in a decrease in the as-deposited compressive stress and can result in tensile stress at high enough temperatures. Interestingly, at the annealing temperatures corresponding to the maximum induced GMR, there is a plateau in the otherwise monotonic decrease in compressive stress with increasing temperature.Stress-temperature plots reveal a plateau in the stress value during the heating of a ten bilayer sample due to plastic deformation in the film via densification. Isothermal stress-time plots done on a single sample show increasing compressive stress relief after each successively higher temperature anneal. The stress was also measured in a single bilayer film with the same volume of film as in a ten bilayer sample but far fewer interfaces. High and low angle x-ray diffraction (HXRD, LXRD) was used to reveal the structural evolution with annealing. Magnetic (M-H) hysteresis measurements revealed increasing coercivity and decreasing induced as-deposited in-plane magnetic uniaxial anisotropy with annealing temperature.

1994 ◽  
Vol 343 ◽  
Author(s):  
J.D. Jarratt ◽  
J.A. Barnard

ABSTRACTGiant Magnetoresistance (GMR), crystal structure, and magnetic properties have been investigated in a series of sputtered Ni66Fe16Co18/Ag multilayer films with induced uniaxial anisotropy. The film thickness ranges studied were 20 and 25 Å for NiFeCo, and 25 to 50 Å for Ag. GMR was only evident in the films after post-deposition annealing. This onset of GMR is thought to be due to the breaking up of the NiFeCo layers into ferromagnetic platelets or islands by the immiscible Ag diffusing perpendicular to the film plane along the grain boundaries. The magnitude and field sensitivity of the GMR was dependent on the annealing time and temperature. High angle x-ray diffraction (HXRD) was used to reveal the overall film structure and growth texture and low angle XRD (LXRD) was used to investigate the quality of the multilayer structures. M-H hysteresis loops revealed in-plane uniaxial anisotropy in as-deposited films which is eventually eliminated with annealing. The easy axis squareness experiences a pronounced decrease with lower temperature annealing, but then increases slightly with annealing temperature.


2003 ◽  
Vol 795 ◽  
Author(s):  
Aaron J. Chalekian ◽  
Roxann L. Engelstad ◽  
Edward G. Lovell

ABSTRACTAccurate mechanical properties of thin films are essential for viable design and fabrication of semiconductor devices and microelectromechanical systems. Relevant properties of thin films such as intrinsic stress, biaxial modulus, and fracture strength can be significantly different than their corresponding bulk values, and much more difficult to measure. However, such data can be obtained from the pressure-deflection response of clamped freestanding membranes, i.e., the so-called pressure-bulge test. Experimental challenges include membrane leakage prevention, ensuring proper structural boundary conditions, and accurately measuring applied pressure and transverse displacements simultaneously. In addition to these issues, most previously-developed pressure-bulge instruments rely on vacuum pump loadings. Such tools are limited by the one-atmosphere differential pressure over the membrane, which is inadequate for burst testing of high-strength films. Consequently, an enhanced pressure-bulge tool has been developed and will be described in this paper. It incorporates positive pressure to overcome the one-atmosphere load limitation, improved edge constraints, and the ability to test an array of membrane windows across a single substrate.


1993 ◽  
Vol 126 (1-3) ◽  
pp. 516-518 ◽  
Author(s):  
P.J. Grundy ◽  
R.J. Pollard ◽  
M.E. Tomlinson

1994 ◽  
Vol 343 ◽  
Author(s):  
W. Y. Lee ◽  
G. Gorman ◽  
R. Savoy

ABSTRACTGiant magnetoresistance with low saturation fields (Hs’s) is reported in Au and permalloy (Ni0.82Fe0.18) or Co-doped permalloy multilayer thin films as-deposited on Ta-overcoated Si and glass substrates. A ΔR/R as high as 4.0% with ≈25 Oe Hs was observed at 295 K for the film consisting of 10 layers of 24 Å Au/13 Å Ni0.82Fe0.18 deposited on a 3 Å Ta-overcoated glass at 50 °C. A Hs value as low as ≈20 Oe with a 15% smaller ΔR/R has been observed for the films with a thicker (e.g., 50 Å) Ta underlayer. Magnetic hysteresis loops of these films indicate the presence of antiferromagnetic exchange coupling between the Ni0.82Fe0.18 layers. This exchange coupling is much smaller for the multilayer films without the Ta underlayer, resulting in a 6x smaller ΔR/R and lOx larger Hs observed for these films. Results of x-ray diffraction analysis indicate stronger (111) texturing for the multilayer films with a Ta underlayer, consistent with the stronger antiferromagnetic coupling between the the Ni0.82Fe0.18 layers in the film. The addition of 2–10 % Co moderately increases the ΔR/R value, but also increases substantially the Hs (up to ≈200 Oe).


2002 ◽  
Vol 754 ◽  
Author(s):  
P. Johnsson ◽  
I. Aoqui ◽  
K. Nötzold ◽  
J. Allebert ◽  
M. Munakata ◽  
...  

ABSTRACTIn order to engineer materials suitable for micromagnetic inductor cores we have fabricated and investigated the properties of granular (CoFeB)-SiO2 amorphous thin films. The deposition method, synchronous triple-rf magnetron sputtering onto rotating substrates, induces anisotropy in the film plane. Here we present magnetic hysteresis loops, resistivity and magnetoresistance measurements of two of these films, with different amount of metallic content. Both films have anisotropic resistivity, which is higher for the film with less metallic content. The low-metallic-content film exhibits typical isotropic giant magnetoresistance (GMR), while the film with higher metallic content shows a mixture of GMR and anisotropic magnetoresistance (AMR). The AMR appears at fields below 500 Oe. We believe that this has not been observed before in amorphous samples. The behaviour of the resistivity versus temperature ρ (T) indicates that the sample with lower metallic content consists of isolated grains while the high-metallic-content sample consists of a percolated network. Experimental ρ (T) data for the low-metallic-content sample fit: to the variable-range hopping model at temperatures lower than 221 K and can be described by excitation of the carriers to the mobility edge at higher temperatures.


Science ◽  
1993 ◽  
Vol 261 (5124) ◽  
pp. 1021-1024 ◽  
Author(s):  
T. L. Hylton ◽  
K. R. Coffey ◽  
M. A. Parker ◽  
J. K. Howard

2003 ◽  
Vol 784 ◽  
Author(s):  
Ding-Yuan Chen ◽  
Timothy E. Murphy ◽  
Jamie D. Phillips

ABSTRACTThis work addresses the need for thick layers of ferroelectric thin films on semiconductors for integrated optics applications. The deposition of BaTiO3 thin films with MgO buffers on patterned GaAs substrates is presented as an approach to achieve crack-free optical waveguiding structures. Cracking and peeling of the thin films are observed on patterns with lateral dimensions exceeding 60 microns and nearly crack-free thin films for patterns with lateral dimensions of a few microns. The cracking and peeling of the thin films is attributed to thermal expansion mismatch during the heating and cooling steps of the deposition process. A thin film stress and fracture model is used to analyze the phenomenon. Reduced cracking and peeling on the patterned features are attributed to strain relief on the patterned features. The inclusion of thick AlxOy buffer layers obtained through wet-oxidation of AlGaAs prior to BaTiO3/MgO deposition are presented as a means of obtaining electro-optic waveguide structures on GaAs.


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