Composition Dependence of Hardness and Moduli in GeSi/Si-Heterostructures Measured by Nanoindentation

1994 ◽  
Vol 356 ◽  
Author(s):  
B. S. Roos ◽  
H. Richter ◽  
T. Morgenstern ◽  
B. Tillack
Keyword(s):  
Vapor Deposition ◽  
Elastic Moduli ◽  
Composition Dependence ◽  
Chemical Vapor ◽  
Linear Interpolation ◽  
Indentation Modulus ◽  
Positive Deviation ◽  
Maximum Hardness ◽  
Complete Solid Solubility ◽  
Vegard’S Law

AbstractGexSi1-x layers (0 ≤ × ≤ 1), with thicknesses ranging from 0.1 to 1.2 µm, were grown on Si(100) and Si(lll) by chemical vapor deposition (APCVD, LP/RTCVD) and liquid phase epitaxy (LPE), respectively. A NanoTest 500 machine served for nanoindentation measurements to evaluate the hardness and elastic moduli. The GeSi layers show strong alloy hardening with an increase varying proportional to x(l-x) as reported for III-V and H-VI-semiconductors. Maximum hardness is close to x = 0.45 at one and a half of the silicon hardness. For binary alloys such as Ge-Si, which show complete solid solubility, the elastic moduli are generally assumed to vary linearly with composition. In contrast to that we found for the indentation modulus E/(l-v2) a positive deviation of 30 % from linear interpolation (Vegard’s law), proportional to x(l-x). The increase in the elastic constants is explained by the structural properties of the Ge-Si alloy.

Composition dependence of room temperature 1.54μm Er3+ luminescence from erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

1997 ◽  
Vol 486 ◽  
Author(s):  
Jung H. Shin ◽  
Mun-Jun Kim ◽  
Se-Young Seo ◽  
Choochon Lee
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Room Temperature ◽  
Composition Dependence ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Erbium Doped ◽  
Resonance Plasma

AbstractThe composition dependence of room temperature 1.54 μ Er3+ photoluminescence of erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium is investigated. The Si:O ratio was varied from 3:1 to 1:2 and the annealing temperature was varied from 500 to 900 °C. The most intense Er3+ luminescence is observed from the sample with Si:O ratio of 1:1.2 after 900 °C anneal and formation of silicon nanoclusters embedded in SiO2 matrix. High active erbium fraction, efficient excitation via carriers, and high luminescence efficiency due to high quality SiO2 matrix are identified as key factors in producing the intense Er3+ luminescence.

Analysis of Vegard’s law for lattice matching InxAl1−xN to GaN by metalorganic chemical vapor deposition

2017 ◽  
Vol 475 ◽  
pp. 127-135 ◽  
Author(s):  
Humberto M. Foronda ◽  
Baishakhi Mazumder ◽  
Erin C. Young ◽  
Matthew A. Laurent ◽  
Youli Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Lattice Matching ◽  
Vegard’S Law ◽  
Metalorganic Chemical

scholarly journals Composition Dependence of the Band Gap Energy of InxGa1−xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition

1999 ◽  
Vol 4 (S1) ◽  
pp. 106-111 ◽  
Author(s):  
J. Wagner ◽  
A. Ramakrishnan ◽  
D. Behr ◽  
M. Maier ◽  
N. Herres ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Composition Dependence ◽  
Chemical Vapor ◽  
Band Gap Energy ◽  
Organic Chemical ◽  
Gap Energy ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We report on the composition dependence of the band gap energy of strained hexagonal InxGa1−xN layers on GaN with x≤0.15, grown by metal-organic chemical vapor deposition on sapphire substrates. The composition of the (InGa)N was determined by secondary ion mass spectroscopy. High-resolution X-ray diffraction measurements confirmed that the (InGa)N layers with typical thicknesses of 30 nm are pseudomorphically strained to the in-plane lattice parameter of the underlying GaN. Room-temperature photoreflection spectroscopy and spectroscopic ellipsometry were used to determine the (InGa)N band gap energy. The composition dependence of the band gap energy of the strained (InGa)N layers was found to be given by EG(x)=3.43−3.28 × (eV) for x≤0.15. When correcting for the strain induced shift of the fundamental energy gap, a bowing parameter of 3.2 eV was obtained for the composition dependence of the gap energy of unstrained (InGa)N.

Comparison of Chemical Vapor Deposited Hafnium Dioxide and Silicon Doped Hafnium Dioxide using either O2, N2O, H2O, O2 plasma, or N2O plasma, and Hf (IV) t-butoxide

2004 ◽  
Vol 811 ◽  
Author(s):  
Harish B. Bhandari ◽  
Ping Chen ◽  
Tonya M. Klein
Keyword(s):  
Deposition Rate ◽  
Vapor Deposition ◽  
Hafnium Oxide ◽  
Composition Dependence ◽  
Chemical Vapor ◽  
Reaction Scheme ◽  
Hafnium Dioxide ◽  
Chemical Vapor Deposited ◽  
Silicon Doped ◽  
Deposited Films

ABSTRACTHafnium oxide (HfO2) and silicon containing hafnium oxide (HfSixOy) thin films were deposited by thermal and plasma enhanced chemical vapor deposition (PECVD) using Hf (IV) t-butoxide and either O2, N2O, H2O, O2 plasma or N2O plasma as an oxygen source. Silane, 2% in He, was added to the reactant gas mixture to incorporate Si. Deposition rate and composition dependence on substrate temperature was studied and the deposited films were annealed in air for 30 min at 1100°C to observe changes in crystallinity and composition. Silicon incorporation was higher for H2O deposited HfSixOy films (5 at.%) than O2 and N2O deposited films (2 at.%) and had a lower deposition rate. Arrhenius plots reveal a non-simplistic reaction scheme since higher temperatures result in lower deposition rates due to precursor desorption. XRD indicate that as-deposited films using H2O are amorphous while O2 and N2O deposited films are microcrystalline with a monoclinic phase.

Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law

2018 ◽  
Vol 113 (6) ◽  
pp. 062102 ◽  
Author(s):  
G. T. Dang ◽  
T. Yasuoka ◽  
Y. Tagashira ◽  
T. Tadokoro ◽  
W. Theiss ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chamber System ◽  
Bandgap Engineering ◽  
Vegard’S Law

Composition Dependence of the Band Gap Energy of InxGal-xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition

1998 ◽  
Vol 537 ◽  
Author(s):  
J. Wagner ◽  
A. Ramakrishnan ◽  
D. Behr ◽  
M. Maier ◽  
N. Herres ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Composition Dependence ◽  
Chemical Vapor ◽  
Band Gap Energy ◽  
Organic Chemical ◽  
Gap Energy ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractWe report on the composition dependence of the band gap energy of strained hexagonal InGal-,N layers on GaN with x≤0.15, grown by metal-organic chemical vapor deposition on sapphire substrates. The composition of the (InGa)N was determined by secondary ion mass spectroscopy. High-resolution X-ray diffraction measurements confirmed that the (InGa)N layers with typical thicknesses of 30 nm are pseudomorphically strained to the in-plane lattice parameter of the underlying GaN. Room-temperature photoreflection spectroscopy and spectroscopic ellipsometry were used to determine the (InGa)N band gap energy. The composition dependence of the band gap energy of the strained (InGa)N layers was found to be given by EG(x)=3.43-3.28.x (eV) for x≤0.15. When correcting for the strain induced shift of the fundamental energy gap, a bowing parameter of 3.2 eV was obtained for the composition dependence of the gap energy of unstrained (InGa)N.

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