Argon incorporation on silicon carbide thin films deposited by bias co-sputtering technique

2012 ◽  
Vol 1433 ◽  
Author(s):  
H. S. Medeiros ◽  
R. S. Pessoa ◽  
M. A. Fraga ◽  
L. V. Santos ◽  
H. S. Maciel ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Substrate Heating ◽  
Opposite Behavior ◽  
Sic Film ◽  
Sic Films ◽  
Argon Content ◽  
Negative Substrate Bias

ABSTRACTThe influence of negative substrate bias on the chemical, electrical and mechanical properties of silicon carbide (SiC) thin films deposited onto (100) silicon substrate by dc magnetron cosputtering without external substrate heating is reported. These studies were performed by using the following techniques: Rutherford backscattering spectroscopy (RBS), profilometry, Raman spectroscopy, four-point probe method and nanoindentation. The results indicate that there is a good correlation between the substrate bias voltage and the argon incorporation into SiC film, namely, the SiC films deposited under substrate bias of –200 V and –300 V have higher argon content and higher elastic modulus and hardness than those deposited at 0 V. An opposite behavior was found for electrical resistivity: the SiC deposited at –300 V has resistivity of 0.45 Ω.cm whereas the deposited at 0 V has 7.0 Ω.cm.

Nano-Structured TiN Thin Films Deposited by Single Ion Beam Reactive Sputtering

2007 ◽  
Vol 555 ◽  
pp. 303-308
Author(s):  
Ž. Bogdanov ◽  
N. Popović ◽  
M. Zlatanović ◽  
B. Goncić ◽  
Z. Rakočević ◽  
...  
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Ion Beam ◽  
Ion Source ◽  
Preferred Orientation ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Substrate Current ◽  
Tin Thin Films ◽  
Negative Substrate Bias

The reactive sputter deposition of TiN thin films onto glass substrate at the ambient temperature using a homemade broad beam argon ion source was investigated in order to deposit the films with nanostructural characteristics. While constant Ar beam energy of 2 keV was used, the N2 partial pressure and the substrate current, adjusted by different accelerator grid potentials (Vacc) were varied. A negative substrate bias voltage (100 V) was additionally applied. The TiN film structure was investigated by XRD and STM methods. All deposited films exhibited (220) preferred orientation, and the change in normalized peak intensity (I220/d), lattice spacing (d220) and full-with at half-maximum (FWHM) were investigated. As a result of higher energy bombardment with 100 V negative substrate bias, compared to the substrate current change with Vacc, nearly constant (220) peak broadening with the increase of N2 partial pressure was obtained. The measured grain diameter (STM and XRD) confirms that the grain size is less than 12 nm, and the (220) preferred orientation was disturbed but not destructed.

Improvement of Zr film purity by using a purified sputtering target and negative substrate bias voltage

2006 ◽  
Vol 201 (3-4) ◽  
pp. 1899-1901 ◽  
Author(s):  
J.-W. Lim ◽  
J.W. Bae ◽  
Y.F. Zhu ◽  
S. Lee ◽  
K. Mimura ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Negative Substrate Bias

Influence of substrate bias voltage on the properties of sputtered nickel oxide thin films

2012 ◽  
Author(s):  
A. Mallikarjuna Reddy ◽  
Ch. Seshendra Reddy ◽  
Y. Ashok Kumar Reddy ◽  
R. Lydia ◽  
P. Sreedhara Reddy ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Bias Voltage ◽  
Substrate Bias ◽  
Oxide Thin Films ◽  
Substrate Bias Voltage ◽  
Influence Of Substrate ◽  
Nickel Oxide Thin Films

scholarly journals The effect of substrate bias on the piezoelectric properties of pulse DC magnetron sputtered AlN thin films

2020 ◽  
Vol 31 (24) ◽  
pp. 22833-22843
Author(s):  
Nguyen Quoc Khánh ◽  
János Radó ◽  
Zsolt Endre Horváth ◽  
Saeedeh Soleimani ◽  
Binderiya Oyunbolor ◽  
...  
Keyword(s):  
Piezoelectric Coefficient ◽  
Piezoresponse Force Microscopy ◽  
Substrate Bias ◽  
Vibration Energy Harvesting ◽  
Force Microscopy ◽  
Ni Substrate ◽  
Substrate Heating ◽  
Positive Ions ◽  
Negative Substrate Bias

AbstractSubstrate bias was applied for AlN deposition on rolled Ni sheet during pulse DC reactive sputtering to overcome the difficulty caused by thermal expansion mismatch between Ni substrate and AlN upon substrate heating. It was shown by Piezoresponse Force Microscopy (PFM) that the quality of the deposited AlN layer depends strongly on the negative substrate bias, i.e., the energy transferred via the bombardment of the accelerated positive ions on the sample. As the negative substrate bias becomes larger, the so formed layer shows higher piezoresponse, and better homogeneity. A Z-cut LiNbO3 single crystal was used as a reference to correct the PFM signals. The highest average d33 piezoelectric coefficient value, achieved at − 100 V substrate bias, is 3.4 pm/V indicating the feasibility of AlN deposition on rolled Ni substrate for vibration energy harvesting applications.

Characterization of Bias Sputtered Aluminum Film

1986 ◽  
Vol 76 ◽  
Author(s):  
Y. Homma ◽  
K. Hinode ◽  
T. Terada
Keyword(s):  
Heat Treatment ◽  
Bias Voltage ◽  
Void Growth ◽  
Aluminum Film ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Film Characteristics ◽  
Negative Substrate Bias

ABSTRACTThe characteristics of RF bias-sputtered Al films are clarified. A negative substrate bias voltage, VDC, produced by RF biasing, strongly influences not only the planarization effect but also film characteristics such as hillock and void growth, and Ar content.Films deposited at VDc lower than -150 V. are significantly degraded due to the formation of two kinds of voids grown during annealing. One type is a blister-like voids, while the others are large and irregular. These are produced when Ar is released from the films during heat treatment. as evidenced by the fact that the amount of Ar released from the films rapidly increases when VDC is lower than -150 V.Although biasing strongly effects Al films resulting in the formation of an almost complete (111) texture. the effect degrades as VDC exceeds -200 V. Thus, Al bias sputtering requires a high resputtering rate and a VDC higher than -150 V to achieve appropriate planarization with suitable film characteristics.

Oxidation of PECVD SiC Deposited from Trimethylsilane

1998 ◽  
Vol 555 ◽  
Author(s):  
Peter A. DiFonzo ◽  
Mona Massuda ◽  
James T. Kelliher
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Sic Films ◽  
Deposition Conditions

AbstractThe stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.

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