UV Laser Deposition of Thin Films at 248 NM for Phase Shifting Mask Repair

1994 ◽  
Vol 354 ◽  
Author(s):  
Janos Farkas ◽  
Paul B. Comita ◽  
Vlad Novotny ◽  
Dolores Miller ◽  
Baurui yeng ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Silicon Dioxide ◽  
Room Temperature ◽  
Optical Transmission ◽  
Phase Shifting ◽  
Laser Deposition ◽  
Uv Laser ◽  
Metallic Films ◽  
Chromium Compounds

AbstractLaser-induced deposition of controlled quality silicon dioxide and thin metallic films was investigated at 248 nm for phase shifting mask (PSM) repair. SiOx (x-1.5-2) films were deposited from single precursors, such as triethoxyvinylsilane (TEVS), tetraallyloxysilane (TAOS), di-t-butoxy-diacetooxysilane (TBSA) with no oxidizing coreactant. A deposition rate of 0.25 A/pulse was possible at room temperature, with excellent optical properties (n-1.47, k-0.05). Metallic films were deposited from tungsten, gold, molybdenum and chromium compounds. The results showed that the optical transmission and phase-shifting properties of the deposits can be matched well to the films commonly used in phase shifting masks.

Structural and Optical Properties of VO2 Film Grown on Sapphire Substrate by Pulsed Laser Deposition

2014 ◽  
Vol 912-914 ◽  
pp. 325-328 ◽  
Author(s):  
Ji Ming Bian ◽  
Li Hua Miao ◽  
Shu Kuo Zhao
Keyword(s):  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Optical Transmission ◽  
Pulsed Laser ◽  
Blue Emission ◽  
Laser Deposition ◽  
Structural And Optical Properties

VO2films were grown on sapphire substrates by pulsed laser deposition (PLD), and the structural and optical properties of as-grown films were investigated by X-ray diffraction (XRD), field effect scanning electron microscopy (FESEM), photoluminescence (PL), and optical-transmission measurements. The oxygen partial pressure in the growth chamber was found to be the key factor deciding the microstructure and properties of as-deposited VO2films, and its effects and corresponding mechanism were investigated systemically. Results indicated that dense and uniform VO2films with smooth surface were achieved by PLD under optimized oxygen partial pressure. Strong blue emission peaks were observed in room temperature photoluminescence (PL) spectra. Excellent selective optical-transmission of the VO2thin films from 200~3000 nm were also recorded at room temperature.

Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Optical Transmission ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Morphology ◽  
Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

Structural and optical properties of Zn1−xCoxO and ZnCo2O4 thin films

2005 ◽  
Vol 891 ◽  
Author(s):  
Kousik Samanta ◽  
Pijush Bhattacharya ◽  
Ram S. Katiyar ◽  
W. Iwamoto ◽  
R. R. Urbano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Optical Absorption ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structural And Optical Properties ◽  
Ceramic Targets ◽  
Co Concentrations

ABSTRACTThin films of Co substituted ZnO and ZnCo2O4 were deposited on c-axis (0001) oriented Al2O3 substrates using pulsed laser deposition. The XRD results showed all the films were highly (002) oriented with a less intense peak of (311) for ZnCo2O4 thin film. Micro-Raman spectra of ceramic targets showed the modes related to wurtzite ZnO and spinel ZnCo2O4 structures. In thin films of Zn1−xCoxO no modes corresponding to ZnCo2O4 were detected. The intensity of E1(LO) and multiphonon peak at 584 and 540 cm−1 respectively, increased with increase in Co substitution. The optical absorption of the films showed that the band gap decreased with increase of Co concentrations at room temperature along with the sub-bandgap absorptions due to d-d transitions of Co2+. Similar sub-bandgap d-d transition was also observed in the absorption spectra ZnCo2O4 thin films. The highest saturated magnetization (0.2μB/Co) was obtained for 5%Co substituted ZnO.

Influence of the Fluence and Substrate Temperature on the Structural and Optical Properties of CdSe Thin Films Prepared by Pulsed Laser Deposition

2011 ◽  
Vol 691 ◽  
pp. 134-138
Author(s):  
M.A. Hernández-Pérez ◽  
J.R. Aguilar-Hernández ◽  
Jorge Roberto Vargas-García ◽  
G.S. Contreras-Puente ◽  
E. Rangel-Salinas ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Hexagonal Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tem Analysis ◽  
Zinc Blend

Cadmium Selenide (CdSe) thin films were prepared by pulsed laser deposition using a Nd:YAG laser (355 nm). Films were grown by ablating a sintered pure CdSe target with fluences from 0.1 to 1.5 J/cm2 on corning glass, silicon (100) and quartz substrates. Deposition chamber was maintained under vacuum pressure while substrate temperature was increased from room temperature to 500°C in order to control the crystalline phase. All the films show mirror-like surface morphology. Atomic force microscopy (AFM) images shown that films have very flat surfaces with RMS values around 0.7 and 5 nm for room temperature and 500°C respectively. The X-ray diffraction analysis proves the presence of the cubic zinc blend phase for the CdSe films deposited at low temperature, at 400°C and at higher substrate temperature the hexagonal phase is present. TEM analysis shows that at 100°C the films are constituted by particles with an average size of 30nm in diameter. The optical properties of the films were determined from the UV-transmission spectra. The estimated band gap values of the films deposited at room temperature and at 400°C (0.1 J/cm2) were 1.87 and 1.70 eV respectively.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Room-temperature ferromagnetism in (Ga, Mn)N thin films grown by pulsed laser deposition

2004 ◽  
Vol 36 (4-6) ◽  
pp. 403-408 ◽  
Author(s):  
D. O’Mahony ◽  
F. McGee ◽  
M. Venkatesan ◽  
J.G. Lunney ◽  
J.M.D. Coey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Pulsed Laser ◽  
Laser Deposition
Sign in / Sign up

Export Citation Format

Share Document