Electrical, structural, and optical properties of ITO thin films prepared at room temperature by pulsed laser deposition

2006 ◽  
Vol 252 (13) ◽  
pp. 4834-4837 ◽  
Author(s):  
Jong Hoon Kim ◽  
Kyung Ah Jeon ◽  
Gun Hee Kim ◽  
Sang Yeol Lee
2014 ◽  
Vol 912-914 ◽  
pp. 325-328 ◽  
Author(s):  
Ji Ming Bian ◽  
Li Hua Miao ◽  
Shu Kuo Zhao

VO2films were grown on sapphire substrates by pulsed laser deposition (PLD), and the structural and optical properties of as-grown films were investigated by X-ray diffraction (XRD), field effect scanning electron microscopy (FESEM), photoluminescence (PL), and optical-transmission measurements. The oxygen partial pressure in the growth chamber was found to be the key factor deciding the microstructure and properties of as-deposited VO2films, and its effects and corresponding mechanism were investigated systemically. Results indicated that dense and uniform VO2films with smooth surface were achieved by PLD under optimized oxygen partial pressure. Strong blue emission peaks were observed in room temperature photoluminescence (PL) spectra. Excellent selective optical-transmission of the VO2thin films from 200~3000 nm were also recorded at room temperature.


2002 ◽  
Vol 419 (1-2) ◽  
pp. 237-241 ◽  
Author(s):  
Hsu-Cheng Hsu ◽  
Hsin-hong Chen ◽  
Shou-Yi Kuo ◽  
Chen-Shiung Chang ◽  
Wen-Feng Hsieh

2019 ◽  
Vol 13 (28) ◽  
pp. 170-178
Author(s):  
Eman K. Hassan

Structural and optical properties of CdO and CdO0.99Cu0.01 thinfilms were prepared in this work. Cadmium Oxide (CdO) andCdO0.99Cu0.01semiconducting films are deposited on glass substratesby using pulsed laser deposition method (PLD) using SHG with QswitchedNd:YAG pulsed laser operation at 1064nm in 6x10-2 mbarvacuum condition and frequency 6 Hz. CdO and CdO0.99Cu0.01 thinfilms annealed at 550 C̊ for 12 min. The crystalline structure wasstudied by X-ray diffraction (XRD) method and atomic forcemicroscope (AFM). It shows that the films are polycrystalline.Optical properties of thin films were analyzed. The direct band gapenergy of CdO and CdO0.99Cu0.01 thin films were determined from(αhυ)1/2 vs. photon energy curve and found to be 2.3 eV for CdO thinfilm, comparing with that the CdO0.99Cu0.01film which found to be2.2eV. The electrical measurements shows that the conductivity andmobility of the charge carriers increase when Cu doped CdO.


2020 ◽  
Vol 76 (6) ◽  
pp. 512-516
Author(s):  
Jin Eun Heo ◽  
Taeyang Choi ◽  
Seo Hyoung Chang ◽  
Jung Hyeon Jeong ◽  
Byung Chun Choi ◽  
...  

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