Strain Measurements of Sigec Heteroepitaxial Layers On Si(100) Using Ion Beam Analysis

1994 ◽  
Vol 354 ◽  
Author(s):  
S. Sego ◽  
R. J. Culbertson ◽  
P. Ye ◽  
S. Hearne ◽  
J. Xiang ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Major Axis ◽  
Ion Scattering ◽  
Strain Measurements ◽  
Ion Channeling ◽  
Beam Analysis ◽  
Heteroepitaxial Layers

AbstractThe strain in SiGeC heteroepitaxial films grown on Si(100) substrates has been quantified using ion channeling. The films were grown both by combined ion beam and molecular beam epitaxy (CIMD) and chemical vapor deposition (CVD). Rutherford backscattering spectrometry (RBS) was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the carbon concentration, and ion channeling was utilized to measure film quality. Channeling angular scans across an off normal major axis were used to quantify the strain. Part of the film was removed by using a solution of HF, HN03 and CH3COOH in order to obtain a reliable scan in the substrate. The results indicate that C may be compensating for the strain introduced by Ge.

Strain measurements of SiGeC heteroepitaxial layers on Si(001) using ion beam analysis

1996 ◽  
Vol 14 (2) ◽  
pp. 441-446 ◽  
Author(s):  
S. Sego ◽  
R. J. Culbertson ◽  
David J. Smith ◽  
Z. Atzmon ◽  
A. E. Bair
Keyword(s):  
Ion Beam ◽  
Ion Beam Analysis ◽  
Strain Measurements ◽  
Beam Analysis ◽  
Heteroepitaxial Layers

scholarly journals A New High-Throughput Focused MeV Ion-Beam Analysis Setup

Instruments ◽  
2021 ◽  
Vol 5 (1) ◽  
pp. 10
Author(s):  
Sören Möller ◽  
Daniel Höschen ◽  
Sina Kurth ◽  
Gerwin Esser ◽  
Albert Hiller ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Complete Analysis ◽  
Nuclear Reaction Analysis ◽  
Beam Optics ◽  
Single Measurement ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Technical Solutions

The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5*10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.

Ion Beam Analysis of O, N, and B Compositions in Materials Using Non-Rutherford Scattering of Protons

1988 ◽  
Vol 128 ◽  
Author(s):  
N. R. Parikh ◽  
Z. H. Zhang ◽  
M. L. Swanson ◽  
N. Yu ◽  
W. K. Chu
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Ion Beam ◽  
Proton Scattering ◽  
Light Elements ◽  
Ion Scattering ◽  
Scattering Cross ◽  
Beam Analysis ◽  
Rutherford Scattering ◽  
Scattering Cross Sections

ABSTRACTElastic scattering of protons with energies from 1.5 MeV to 2 MeV was used to determine the concentration of oxygen in Y-Ba-Cu-O compound, nitrogen in GaN films, and boron in B-Si glass and other materials. Proton scattering from light elements in this energy range exhibits non-Rutherford scattering cross section, which are enhanced by a factor of 3 to 6 or more relative to the Rutherford scattering cross sections. Thus the sensitivity for the light clement detection is considerably larger than that obtained by He ion scattering.Quantitative analysis by proton scattering is discussed and compared with other methods.

Ion beam analysis of laser-deposited high Tc YBa2Cu3O7 superconducting thin films

1990 ◽  
Vol 5 (9) ◽  
pp. 1793-1798 ◽  
Author(s):  
Rajiv K. Singh ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Elastic Scattering ◽  
Cross Section ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Scattering Cross Section ◽  
Superconducting Thin Films ◽  
Ion Channeling ◽  
Scattering Cross ◽  
Proton Elastic Scattering

We have performed Rutherford backscattering spectrometry, non-Rutherford proton elastic scattering, and axial ion channeling analysis to determine the composition, the crystallinity, and the epitaxial quality of YBa2Cu3O7 superconducting thin films on (100) SrTiO3 and (100) yttria stabilized zirconia (YSZ) substrates. YBa2Cu3O7 superconducting thin films were fabricated both by high and low temperature laser ablation techniques. The former method requires high temperature annealing in oxygen to recover the superconducting properties, whereas in the latter method as-deposited in situ superconducting thin films are formed at low processing temperatures (500 °C–650 °C). Helium ions in the energy range of 2.0–2.5 MeV were used to determine the relative stoichiometries of the heavier atomic number elements (Y, Ba, Cu) in the film, but are not sensitive enough to determine the relative amount of oxygen in the superconducting phase. The detection sensitivities to oxygen can be greatly enhanced by using the proton elastic scattering [16O(p,p) 16O] reaction, which was found to increase the scattering cross section by a factor of 3 to 5 relative to the Rutherford scattering cross section. The ion-channeling of YBa2Cu3O7 superconducting thin films on (100) SrTiO3 substrates showed excellent minimum channeling yields corresponding to epitaxial growth, but the presence of defects increased the channeling yields for films deposited on (100) YSZ substrates. The ion channeling yields are compared with the microstructure of the films determined by transmission electron microscopy.

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

Adsorption and diffusion of strontium in simulated rock fractures quantified via ion beam analysis

2012 ◽  
Vol 76 (8) ◽  
pp. 3203-3215 ◽  
Author(s):  
T. Ohe ◽  
B. Zou ◽  
K. Noshita ◽  
I. Gomez-Morilla ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Rapid Determination ◽  
Ion Beam ◽  
Effective Diffusion ◽  
Atomic Weight ◽  
Alpha Particles ◽  
Transport Parameters ◽  
Ion Beam Analysis ◽  
Starting Solution ◽  
Beam Analysis

AbstractAn experimental technique has been developed and applied to the problem of determining effective diffusion coefficients and partition coefficients of Sr in low permeability geological materials. This technique, the micro-reactor simulated channel method (MRSC), allows rapid determination of contaminant transport parameters with resulting values comparable to those determined by more traditional methods and also creates product surfaces that are amenable for direct chemical analysis. An attempt to further constrain mass flux was completed by detailed ion beam analysis of polished tuff surfaces (tuff is a polycrystalline polyminerallic aggregate dominated by silicate phases) that had been reacted with Sr solutions at concentrations of 10−5, 10−3 and 10−1 mol l−1. Ion beam analysis was carried out using beams of both protons (using particle induced X-ray emission and elastic backscattering spectrometry or EBS) and alpha-particles (using Rutherford backscattering spectrometry). The ion beam analyses showed that increased solution concentrations resulted in increased surface concentrations and that in the highest concentration experiment, Sr penetrated to at least 4 μm below the primary interface. The Sr surface concentrations determined by EBS were 0.06 (±0.05), 0.87 (±0.30) and 2.40 (±1.0) atomic weight % in the experiments with starting solution concentrations of 10−5, 10−3, and 10−1 mol l−1, respectively.

Tetragonal Strain in MBE GexSi1-x Films Grown on (100) Si Observed by Ion Channeling and X-Ray Diffraction

1983 ◽  
Vol 25 ◽  
Author(s):  
A. T. Fiory ◽  
L. C. Feldman ◽  
J. C. Bean ◽  
I. K. Robinson
Keyword(s):  
Molecular Beam ◽  
Critical Thickness ◽  
Ion Beam ◽  
Growth Surface ◽  
X Ray Diffraction ◽  
Strained Layers ◽  
X Ray ◽  
Ion Channeling ◽  
Pseudomorphic Growth ◽  
Beam Damage

ABSTRACTStructure of GexSi1-x alloy films grown on (100) Si by molecular beam epitaxy is analyzed by MeV He+ ion channeling and X-ray diffraction as functions of Ge concentration, film thickness and growth temperature. Critical thicknesses for pseudomorphic growth are determined for x ≤ 0.5, where coherent tetragonally-strained layers are observed. The average strain decreases approximately as the square-root of thickness when the critical thickness is exceeded. At temperatures near the threshold for islanding growth, surface roughness appears as a precursor to degradation of strained-layer epitaxy. No effect on the amount of the tetragonal strain was found in a study of ion-beam damage.

H-passivation of Si(100) By Wet Chemical Cleaning: Discovery of Ordering

1998 ◽  
Vol 513 ◽  
Author(s):  
V. Atluri ◽  
N. Herbots
Keyword(s):  
Ion Beam ◽  
Elastic Recoil ◽  
Signal To Noise ◽  
Chemical Cleaning ◽  
Elastic Recoil Detection ◽  
Ion Channeling ◽  
Atomic Force ◽  
Beam Analysis ◽  
Wet Chemical ◽  
First Time

ABSTRACTSi(100) is H-passivated via a modified pre-RCA cleaning followed by etching in HF:alcohol, to produce ordered (1 × 1) templates which desorb at low temperature (T ≥ 600°C). Four sets of 12 wafers, each set processed identically, are used to test reproducibility, and are characterized by Ion Beam Analysis (IBA), Tapping Mode Atomic Force Microscope (TMAFM), and Fourier Transform Infrared Spectroscopy (FTIR). The absolute coverage of oxygen and carbon is measured by ion channeling combined with nuclear resonance at 3.05 MeV for oxygen and 4.265 MeV for carbon, improving the signal to noise by a factor 10 for oxygen and by 120 for carbon. It is then possible for the first time to measure ordering of oxygen atoms with respect to the surface by comparing the amount of oxygen from rotating random spectra to the disordered oxygen measured by channeling. Hydrogen is measured via the elastic recoil detection (ERD) of 4He2+ at 2.8 MeV.Si(100) etched in HF:methanol after a modified preliminary RCA cleaning yields the cleanest surface. The data suggest that Si(100) passivated by HF in alcohol is terminated by an ordered hydroxide layer, which desorbs at lower temperatures than the more refractory Si02.

scholarly journals RBS, PIXE, Ion-Microbeam and SR-FTIR Analyses of Pottery Fragments from Azerbaijan

Heritage ◽  
2019 ◽  
Vol 2 (3) ◽  
pp. 1852-1873 ◽  
Author(s):  
Lorenzo Torrisi ◽  
Valentina Venuti ◽  
Vincenza Crupi ◽  
Letteria Silipigni ◽  
Mariapompea Cutroneo ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Chemical Characterization ◽  
Geographic Area ◽  
X Ray ◽  
Ftir Microspectroscopy ◽  
Beam Analysis ◽  
Xix Century ◽  
Non Destructive ◽  
Archeological Site

The present work is aimed at the investigation of the ceramic bulk and pigmented glazed surfaces of ancient potteries dating back to XIX century A.D. and coming from the charming archeological site located in the Medieval Agsu town (Azerbaijan), a geographic area of special interest due to the ancient commercial routes between China, Asia Minor, and Europe. For the purpose of the study, complementary investigation tools have been exploited: non-destructive or micro-destructive investigation at elemental level by ion beam analysis (IBA) techniques, by using Rutherford Backscattering Spectrometry (RBS), Proton-Induced X-ray Emission (PIXE) spectroscopy and ion-microbeam analysis, and chemical characterization at microscopic level, by means of synchrotron radiation (SR) Fourier transform infrared (FTIR) microspectroscopy. The acquired information reveals useful for the identification of the provenance, the reconstruction of the firing technology, and finally, the identification of the pigment was used as a colorant of the glaze.

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