Strain measurements of SiGeC heteroepitaxial layers on Si(001) using ion beam analysis

1996 ◽  
Vol 14 (2) ◽  
pp. 441-446 ◽  
Author(s):  
S. Sego ◽  
R. J. Culbertson ◽  
David J. Smith ◽  
Z. Atzmon ◽  
A. E. Bair
Keyword(s):  
Ion Beam ◽  
Ion Beam Analysis ◽  
Strain Measurements ◽  
Beam Analysis ◽  
Heteroepitaxial Layers

Strain Measurements of Sigec Heteroepitaxial Layers On Si(100) Using Ion Beam Analysis

1994 ◽  
Vol 354 ◽  
Author(s):  
S. Sego ◽  
R. J. Culbertson ◽  
P. Ye ◽  
S. Hearne ◽  
J. Xiang ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Major Axis ◽  
Ion Scattering ◽  
Strain Measurements ◽  
Ion Channeling ◽  
Beam Analysis ◽  
Heteroepitaxial Layers

AbstractThe strain in SiGeC heteroepitaxial films grown on Si(100) substrates has been quantified using ion channeling. The films were grown both by combined ion beam and molecular beam epitaxy (CIMD) and chemical vapor deposition (CVD). Rutherford backscattering spectrometry (RBS) was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the carbon concentration, and ion channeling was utilized to measure film quality. Channeling angular scans across an off normal major axis were used to quantify the strain. Part of the film was removed by using a solution of HF, HN03 and CH3COOH in order to obtain a reliable scan in the substrate. The results indicate that C may be compensating for the strain introduced by Ge.

scholarly journals Evaluation of the sub-surface morphology and composition of gunshot residue using focussed ion beam analysis

2019 ◽  
Vol 297 ◽  
pp. 100-110 ◽  
Author(s):  
Nick Lucas ◽  
Kelsey E. Seyfang ◽  
Andrew Plummer ◽  
Michael Cook ◽  
K. Paul Kirkbride ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Ion Beam ◽  
Gunshot Residue ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Focussed Ion Beam

scholarly journals A New High-Throughput Focused MeV Ion-Beam Analysis Setup

Instruments ◽  
2021 ◽  
Vol 5 (1) ◽  
pp. 10
Author(s):  
Sören Möller ◽  
Daniel Höschen ◽  
Sina Kurth ◽  
Gerwin Esser ◽  
Albert Hiller ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Complete Analysis ◽  
Nuclear Reaction Analysis ◽  
Beam Optics ◽  
Single Measurement ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Technical Solutions

The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5*10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.

Characterization of GaAs[sub 1−x]N[sub x] epitaxial layers by ion beam analysis

2004 ◽  
Vol 22 (3) ◽  
pp. 908 ◽  
Author(s):  
P. Wei ◽  
M. Chicoine ◽  
S. Gujrathi ◽  
F. Schiettekatte ◽  
J.-N. Beaudry ◽  
...  
Keyword(s):  
Ion Beam ◽  
Epitaxial Layers ◽  
Ion Beam Analysis ◽  
Beam Analysis

scholarly journals Diffusion and Distribution Studies of Photoacid Generators. Ion Beam Analysis in Lithograpy.

1999 ◽  
Vol 12 (3) ◽  
pp. 457-467 ◽  
Author(s):  
Narayan Sundararajan ◽  
Christopher F. Keimel ◽  
Navin Bhargava ◽  
Christopher K. Ober ◽  
Juliann Opitz ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Analysis ◽  
Photoacid Generators ◽  
Beam Analysis ◽  
Distribution Studies
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