Understanding and Controlling Transient Enhanced Dopant Diffusion in Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
P.A. Stolk ◽  
H.-J. Gossmann ◽  
D.J. Eaglesham ◽  
D.C. Jacobson ◽  
H.S. Luftman ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Activation Energy ◽  
Solubility Limit ◽  
Solid Solubility Limit ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Defect Clusters ◽  
Transmission Electron ◽  
Junction Formation ◽  
B Doping

AbstractImplanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, we have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of -3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2-2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {311} defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of excess interstitials is strongly reduced by incorporating substitutional C in Si to levels of ∼1019/cm3 prior to ion implantation. This provides a promising method for suppressing TED, thus enabling shallow junction formation in future Si devices through dopant implantation.

Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates

2019 ◽  
Vol 963 ◽  
pp. 127-130
Author(s):  
Jörg Pezoldt ◽  
Charbel Zgheib ◽  
Thomas Stauden ◽  
Gernot Ecke ◽  
Thomas Kups ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Solubility Limit ◽  
Solid Solubility Limit ◽  
Transmission Electron ◽  
Section Electron ◽  
Heteroepitaxial Layers ◽  
Section Electron Microscopy

Ternary (Si1-xCy)Gex+y solid solutions were grown on Si-face 4H-SiC applying atomic layer molecular beam epitaxy at low temperatures. The grown layers consist of twinned 3C-SiC revealed by cross section electron microscopy. The germanium was incorporated on silicon lattice sites as revealed by atomic location by channeling enhanced microanalysis transmission electron microscopy studies. The Ge concentration of the grown 3C-(Si1-xCy)Gex+y heteroepitaxial layers decreases with increasing growth temperatures, but exceeds the solid solubility limit.

Optimization of Fluorine Co-implantation for PMOS Source and Drain Extension Formation for 65nm Technology Node

2004 ◽  
Vol 810 ◽  
Author(s):  
H. Graoui ◽  
M. Hilkene ◽  
B. McComb ◽  
M. Castle ◽  
S. Felch ◽  
...  
Keyword(s):  
Solubility Limit ◽  
Junction Depth ◽  
Solid Solubility Limit ◽  
Enhanced Diffusion ◽  
Technology Node ◽  
Energy Needs ◽  
Junction Formation ◽  
Boron Implantation ◽  
The Right ◽  
Spike Annealing

ABSTRACTThe main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90 nm technology node ITRS requirements. To meet the 65 nm technology requirements many studies have used fluorine co-implantation with boron and Si+ or Ge+ pre-amorphization (PAI) and spike annealing. Although using BF+2 can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that for the fluorine to successfully reduce TED its energy needs to be well optimized with respect to the boron's, therefore BF+2 does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy when a deep or shallow PAI is used. We also demonstrate that the fluorine dose needs to be carefully optimized otherwise a reverse effect can be observed. We will also show that the optimized junction depends less on the Ge+ energies between 2 keV and 20 keV and when HF etch is implemented after Ge+ PAI, improvements in both the junction depth and the sheet resistance are observed.

scholarly journals Structure and Microstructure of Y-doped Strontium Titanate Ceramics

2008 ◽  
Vol 14 (S3) ◽  
pp. 11-12 ◽  
Author(s):  
Alexander Tkach ◽  
Paula M. Vilarinho ◽  
Ian M. Reaney
Keyword(s):  
Electron Microscopy ◽  
Solubility Limit ◽  
Second Phase ◽  
X Ray Diffraction ◽  
Solid Solubility Limit ◽  
Local Composition ◽  
Transmission Electron ◽  
High Dielectric ◽  
Titanate Ceramics ◽  
Structure And Microstructure

High dielectric constant important for functional electronic applications have been reported in the Sr1-1.5xYxTiO3 ceramic system with a maximum value for x = 0.01 coincident with the maximum grain size. This observation points to a possible correlation between the dielectric response and the microstructure of these ceramics. A solid solubility limit around x = 0.04 was reported recently by Fu et al., although the second phase was observed by X-ray diffraction only for x = 0.07. Therefore, the structure, microstructure and local composition of Sr1-1.5xYxTiO3 ceramics (x = 0 − 0.05) prepared by conventional mixed oxide method is investigated in this work by transmission electron microscopy (TEM) and scanning electron microscopy (SEM) equipped with energy dispersive spectroscopy facilities.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

Examination of Extra Electron Diffraction Spots Observed in Deuterium-Irradiated Silicon by Using Parallel Electron Beam Illumination

1990 ◽  
Vol 48 (2) ◽  
pp. 490-491
Author(s):  
Ryuichiro Oshima ◽  
Shoichiro Honda ◽  
Tetsuo Tanabe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Single Crystal ◽  
Mixed Solution ◽  
Parallel Beam ◽  
Defect Clusters ◽  
Float Zone ◽  
Transmission Electron ◽  
Extra Electron ◽  
Diffraction Patterns

In order to examine the origin of extra diffraction spots and streaks observed in selected area diffraction patterns of deuterium irradiated silicon, systematic diffraction experiments have been carried out by using parallel beam illumination.Disc specimens 3mm in diameter and 0.5mm thick were prepared from a float zone silicon single crystal(B doped, 7kΩm), and were chemically thinned in a mixed solution of nitric acid and hydrogen fluoride to make a small hole at the center for transmission electron microscopy. The pre-thinned samples were irradiated with deuterium ions at temperatures between 300-673K at 20keV to a dose of 1022ions/m2, and induced lattice defects were examined under a JEOL 200CX electron microscope operated at 160kV.No indication of formation of amorphous was obtained in the present experiments. Figure 1 shows an example of defects induced by irradiation at 300K with a dose of 2xl021ions/m2. A large number of defect clusters are seen in the micrograph.

Nanoscale Mechanical Properties of In-Situ Tribofilms Generated from ZDDP and F-ZDDP with and without Antioxidants

2007 ◽  
Vol 7 (12) ◽  
pp. 4378-4390 ◽  
Author(s):  
Anuradha Somayaji ◽  
Ramoun Mourhatch ◽  
Pranesh B. Aswath
Keyword(s):  
Electron Microscopy ◽  
Wear Debris ◽  
Surface Region ◽  
Nucleation And Growth ◽  
Near Surface ◽  
Transmission Electron ◽  
Dialkyl Dithiophosphates ◽  
Wear Tests ◽  
Diphenyl Amine

Tribofilms with thickness ranging from 100–200 nm were developed in-situ during wear tests using a zinc dialkyl dithiophosphates (ZDDP) and fluorinated ZDDP (F-ZDDP). The influence of the antioxidant alkylated diphenyl amine on the formation and properties of these tribofilm is examined. Results indicate that the thickness of the tribofilms formed when F-ZDDP is used is always thicker than the tribofilm formed with ZDDP. In addition, in the presence of antioxidants the tribofilm thickness is increased. The hardness of these tribofilms in the absence of the antioxidants is significantly higher at the near surface region (0–30 nm) when compared to the films formed in the presence of antioxidant. Nanoscratch tests conducted to examine the abrasion resistance of the tribofilms also indicate that the tribofilms formed by F-ZDDP are more resistant to scratch compared to films formed by ZDDP. In the presence of antioxidant, tribofilms formed by F-ZDDP are significantly thicker while both films behave in a similar fashion in nanoscratch tests. Transmission electron microscopy of the wear debris formed during the tests were examined and results indicate the nucleation and growth of nanoparticles of Fe3O4 with an approximate size of 5–10 nm embedded within an otherwise amorphous tribofilm.

scholarly journals High Resolution Transmission Electron Microscopy of Metallic Film/Laser-Irradiated Alumina Couples.

1994 ◽  
Vol 357 ◽  
Author(s):  
A. J. Pedraza ◽  
Siqi Cao ◽  
L. F. Allard ◽  
D. H. Lowndes
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Copper Film ◽  
Interfacial Structure ◽  
Diffuse Interface ◽  
Cross Sectional ◽  
Polycrystalline Alumina ◽  
Near Surface ◽  
Transmission Electron

AbstractA near-surface thin layer is melted when single crystal alumina (sapphire) is pulsed laserirradiated in an Ar-4%H2 atmosphere. γ-alumina grows epitaxially from the (0001) face of axalumina (sapphire) during the rapid solidification of this layer that occurs once the laser pulse is over. Cross sectional high resolution transmission electron microscopy (HRTEM) reveals that the interface between unmelted sapphire and γ-alumina is atomistically flat with steps of one to a few close-packed oxygen layers; however, pronounced lattice distortions exist in the resolidified γ-alumina. HRTEM also is used to study the metal-ceramic interface of a copper film deposited on a laser-irradiated alumina substrate. The observed changes of the interfacial structure relative to that of unexposed substrates are correlated with the strong enhancement of film-substrate bonding promoted by laser irradiation. HRTEM shows that a thin amorphous film is produced after irradiation of 99.6% polycrystalline alumina. Formation of a diffuse interface and atomic rearrangements that can take place in metastable phases contribute to enhance the bonding strength of copper to laser-irradiated alumina.

CoSi2 Precipitate Coarsening During Formation of Buried Epitaxial Cosi2 Layers By Ion Beam Synthesis

1990 ◽  
Vol 201 ◽  
Author(s):  
R. Jebasinski ◽  
S. Mantl ◽  
K. Radermacher ◽  
P. Fichtner ◽  
W. Jăger ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Activation Energy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Microstructural Evolution ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Precipitate Coarsening ◽  
Annealing Temperatures ◽  
Transmission Electron

AbstractThe coarsening of CoSi2 precipitates and the microstructural evolution of (111) Si implanted with 200 keV Co+ ions at 350°C and fluences of 1×1016cm−2 and 6×1016cm−2 were investigated as a function of depth, annealing temperature and annealing time using Rutherford Backscattering Spectroscopy (RBS) and Transmission Electron Microscopy (TEM). After annealing cross-section TEM micrographs show a layered array of platelet-shaped precipitates with preferred facets on {111} planes. The fraction of Co-atoms, that were redistributed during the different annealing temperatures and times, has been used to determine an activation energy for the precipitate coarsening. By applying the Meechan-Brinkman and the change-of-slope methods, we obtained activation energies in the range of 3.2 – 3.6 eV.

Coarsening Process of Decomposed Phases in Cu-Ni-Cr Alloys

2010 ◽  
Vol 654-656 ◽  
pp. 2346-2349
Author(s):  
Felipe Hernandez-Santiago ◽  
Victor M. Lopez-Hirata ◽  
Maribel L. Saucedo-Muñoz
Keyword(s):  
Electron Microscopy ◽  
Activation Energy ◽  
Volume Fraction ◽  
Ternary Alloys ◽  
Size Distributions ◽  
Rich Phase ◽  
Thermally Activated ◽  
Ternary Alloy Systems ◽  
Transmission Electron ◽  
Lsw Theory

A study of the coarsening process of the decomposed phases was carried out in the Cu-34wt.%Ni-4wt.%Cr and Cu-45wt.%Ni-10wt.%Cr alloys using transmission electron microscopy. As aging progressed, the morphology of the coherent decomposed Ni-rich phase changed from cuboids to platelets aligned in the <100> Cu-rich matrix directions. Prolonged aging caused the loss of coherency between the decomposed phases and the morphology of the Ni-rich phase changed to ellipsoidal. The variation of mean radius of the coherent decomposed phases with aging time followed the modified LSW theory for thermally activated growth in ternary alloy systems. The coarsening rate was faster in the symmetrical Cu-45wt.%Ni-10wt.%Cr alloy due to its higher volume fraction of precipitates. The activation energy for thermally activated growth was determined to be about 182 and 102 kJ mol-1 in the Cu-34wt.%Ni-4wt.%Cr and Cu-45wt.%Ni-10wt.%Cr alloys, respectively. The size distributions of precipitates in the Cu-Ni-Cr alloys were broader and more symmetric than that predicted by the modified LSW theory for ternary alloys.

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