Coherent V2O3 Precipitates in ɑ-Al2O3 Co-Implanted With Vanadium and Oxygen

1994 ◽  
Vol 354 ◽  
Author(s):  
Laurence A. Gea ◽  
L. A. Boatner ◽  
Janet Rankin ◽  
J. D. Budai

AbstractThe oxides of vanadium VO2 and V2O3 are of fundamental and practical interest since they undergo structural phase transitions during which large variations in their optical and electronic properties are observed. In the present work, we report the formation of buried precipitates of V2O3 in sapphire by ion implantation and thermal annealing. It was found that the co-implantation of oxygen and vanadium was required in order to form nanophase V2O3 precipitates. Additionally, these precipitates, which formed only following an anneal of the co-implanted sample under reducing conditions, are coherent with the sapphire lattice. Two epitaxial relationships were observed: (0001)V2O3//(0001) ɑ-Al2O3 and (11-20)V2O3//(0001) ɑ-Al2O3. This finding is in agreement with results obtained elsewhere for thin films of V2O3 deposited on c-axis-oriented sapphire.

2021 ◽  
pp. 159346
Author(s):  
Hyun-Woo Bang ◽  
Woosuk Yoo ◽  
Kyujoon Lee ◽  
Young Haeng Lee ◽  
Myung-Hwa Jung

2020 ◽  
Vol 124 (27) ◽  
pp. 14804-14810
Author(s):  
Komsilp Kotmool ◽  
Prutthipong Tsuppayakorn-aek ◽  
Thanayut Kaewmaraya ◽  
Udomsilp Pinsook ◽  
Rajeev Ahuja ◽  
...  

2018 ◽  
Vol 20 (8) ◽  
pp. 5636-5643 ◽  
Author(s):  
Christoph Möller ◽  
Hanna Fedderwitz ◽  
Claudine Noguera ◽  
Jacek Goniakowski ◽  
Niklas Nilius

STM and DFT calculations are employed to explore structural phase transitions in thin copper-oxide films grown on Au(111).


2019 ◽  
Vol 21 (40) ◽  
pp. 22647-22653 ◽  
Author(s):  
Georgy V. Pushkarev ◽  
Vladimir G. Mazurenko ◽  
Vladimir V. Mazurenko ◽  
Danil W. Boukhvalov

First principles calculations of the magnetic and electronic properties of VSe2 describing the transition between two structural phases (H,T) were performed.


2013 ◽  
Vol 86 (9) ◽  
pp. 932-940 ◽  
Author(s):  
Krzysztof Dorywalski ◽  
Bohdan Andriyevsky ◽  
Michał Piasecki ◽  
Iwan Kityk ◽  
Christoph Cobet ◽  
...  

1998 ◽  
Vol 450 (1-3) ◽  
pp. 135-139 ◽  
Author(s):  
T Gavrilko ◽  
M Drozd ◽  
G Puchkovskaya ◽  
A Naumovets ◽  
Z Tkachenko ◽  
...  

2002 ◽  
Vol 751 ◽  
Author(s):  
Darren Dale ◽  
Aaron Fleet ◽  
J.D. Brock ◽  
Y. Suzuki

ABSTRACTWe have studied the properties of epitaxial La(1-x)SrxMnO3 (x=0.3, 0.5) epitaxial thin films grown on BaTiO3 and SrTiO3. Significant modifications of properties are observed in magnetization and resistivity versus temperature experiments. These modifications occur at temperatures corresponding to structural phase transitions in the substrate. The x=0.5 composition is particularly sensitive to changes in the epitaxial strain state, exhibiting a direct correlation between changes in strain, magnetization and resistivity. Strain can also be induced in BaTiO3 by the inverse piezoelectric effect, which results in as much as a 13% decrease in the resistivity of the film.


2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Li Lei ◽  
Jinzhan Li ◽  
Ruitao Zhang ◽  
Limin Li ◽  
Bo Deng ◽  
...  

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