Ion Beam Synthesis by Tungsten-Implantation Into 6H-SIC

1994 ◽  
Vol 354 ◽  
Author(s):  
Hannes Weishart ◽  
J. Schöneich ◽  
H. J. Steffen ◽  
W. Matz ◽  
W. Skorupa
Keyword(s):  
Tungsten Carbide ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Dose ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conductive Surface ◽  
Chemical States ◽  
High Dose Implantation

AbstractWe studied high-dose implantation of tungsten into 6H-silicon carbide in order to synthesize a highly conductive surface layer. Implantation was performed at 200 keV at room temperature. Subsequently, the samples were annealed in two steps at 500°C and 700°C or 950°C, respectively. The influence of dose and annealing temperature on the reaction of W with SiC was investigated. Rutherford Backscattering Spectrometry (RBS), X-Ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) contributed to study structure and composition of the layer as well as chemical states of the elements. During implantation sputtering became significant at a dose exceeding 1.0×1017 W+cm−2. Formation of tungsten carbide and suicide was observed already in the as-implanted state. An annealing temperature of 950°C was necessary to crystallize tungsten carbide. However, tungsten suicide remained amorphous at this temperature. Therefore, a mixture of polycrystalline tungsten carbide and amorphous tungsten suicide evolved under these conditions. The resistivity of such a layer implanted with 1.0×1017 W+ cm−2 and annealed at 950°C is 565 μΩcm.

Ion Beam Synthesis By Tungsten Implantation Into 6h-Silicon Carbide At Elevated Temperatures

1996 ◽  
Vol 423 ◽  
Author(s):  
Hannes Weishart ◽  
W. Matz ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
Tungsten Carbide ◽  
Elevated Temperatures ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Bimodal Distribution ◽  
High Dose ◽  
Electrically Conductive ◽  
Implantation Temperature ◽  
High Dose Implantation

AbstractWe studied high dose implantation of tungsten into 6H-silicon carbide in order to synthesize an electrically conductive layer. Implantation was performed at 200 keV with a dose of 1×1017 W+cm−2 at temperatures of 90°C and 500°C. The samples were subsequently annealed either at 950°C or 1100°C. The influence of implantation and annealing temperatures on the reaction of W with SiC was investigated. Rutherford backscattering spectrometry (RBS), x-ray diffiraction (XRD) and Auger electron spectroscopy (AES) contributed to study the structure and composition of the implanted layer as well as the chemical state of the elements. The implantation temperature influences the depth distribution of C, Si and W as well as the damage production in SiC. The W depth profile exhibits a bimodal distribution for high temperature implantation and a customary gaussian distribution for room temperature implantation. Formation of tungsten carbide and silicide was observed in each sample already in the as-implanted state. Implantation at 90°C and annealing at 950°C lead to crystallization of W2C; tungsten silicide, however, remains amorphous. After implantation at 500°C and subsequent annealing at 11007deg;C crystalline W5Si3 forms, while tungsten carbide is amorphous.

Silicide Formation in High-Dose Fe-Implanted Silicon

1991 ◽  
Vol 235 ◽  
Author(s):  
Z. Tan ◽  
F. Namavar ◽  
S. M. Heald ◽  
J. I. Budnick ◽  
F. H. Sanchez
Keyword(s):  
Fine Structure ◽  
Single Phase ◽  
Rutherford Backscattering Spectrometry ◽  
High Dose ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Implantation Damage ◽  
X Ray Absorption ◽  
Post Implantation

ABSTRACTWe have studied the silicide formation in Fe-implanted Si(100), with 1×1017-1×1018 Fe/cm2, using extended x-ray-absorption fine structure (EXAFS), x-ray diffraction and Rutherford backscattering spectrometry (RBS) methods. In the samples as-implanted at 350 °C, no silicide was observed at doses below 3×1017 Fe/cm2. At 5×1017 Fe/cm2, both α-FeSi2 and (β-FeSi2 form but α-FeSi2 appears to be the majority phase. As the dose increases to 7×1017 and above, ordered FeSi forms, but implantation damage is severe and a large number of Fe atoms are in very disordered environments. In addition to FeSi, Fe5Si3 was also observed in the 1×1018 Fe/cm2 sample. Upon post-implantation annealing at 700 °C or 900 °C, single phase P-FeSi2 was obtained independent of the dosage.

Silicide Formation By High Dose Transition Metal Implants Into Si.

1985 ◽  
Vol 51 ◽  
Author(s):  
F. H. Sanchez ◽  
F. Namavar ◽  
J. I. Budnick ◽  
A. Fasihudin ◽  
H. C. Hayden
Keyword(s):  
Transition Metal ◽  
Rutherford Backscattering Spectrometry ◽  
Atomic Diffusion ◽  
High Dose ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Implants ◽  
Metal Silicides ◽  
Suitable Technique

ABSTRACTWe report preliminary results of a study on silicide formation by means of high dose transition metal implants into Si (100) single crystals.100 keV Cr+, Fe+, Co+ and Ni+ were implanted at room temperature. For the Cr+, Fe+ and Ni+ implants, no silicide formation was observed after implantation. However, both Rutherford Backscattering Spectrometry (RBS) and X-Ray Diffraction (XRD) results clearly indicated the existence of CrSi2 after the Cr-Si samples were annealed 4 hours at 550°C. In the case of the Fe+ and Ni+ implants, FeSi2 and NiSi2 were identified by XRD after annealing the implanted samples half an hour at 400°C. A layer of CoSi of about 1000 Å was observed in the as implanted Co-Si samples by both RBS and XRD.Ni+ ions accelerated to 150 keV were implanted at 350°C. A much broader distribution and higher retention of Ni was obtained in this case, showing evidence of long range atomic diffusion. NiSi and polycrystalline silicon were observed by XRD in the as implanted samples.The possibility of high dose ion implantation as a suitable technique for producing transition metal silicides is discussed.

Favored Structure of Ag Nanoparticles Embedded in SiO2 by Implantation: Single Crystal with Contracted (111) Lattice

2000 ◽  
Vol 15 (6) ◽  
pp. 1245-1247 ◽  
Author(s):  
Zhengxin Liu ◽  
Hao Li ◽  
Honghong Wang ◽  
Dingyu Shen ◽  
Xuemei Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ag Nanoparticles ◽  
Lattice Spacing ◽  
High Dose ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Dose Implantation

The structure of Ag nanoparticles, embedded in crystalline SiO2 by high-dose implantation, was investigated. It was found that single crystal is favored over multiple-twinned particles. In addition, the contracted (111) lattice spacing of the Ag nanocrystals was measured by x-ray diffraction.

STUDY OF ION BEAM SYNTHESIZED YSi2-x LAYERS

2010 ◽  
Vol 09 (06) ◽  
pp. 549-552
Author(s):  
AYACHE RACHID ◽  
BOUABELLOU ABDERRAHMANE ◽  
EICHHORN FRANK
Keyword(s):  
Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Pole Figures ◽  
Different Temperatures ◽  
Scanning Electron

The processes in the synthesis of a thin layer of hexagonal YSi 2-x phase on a single-crystal Si (111) substrate by implantation of 195 keV Y ions with a dose of 2 × 1017 Y +/ cm 2 at 300°C followed by annealing in an N2 atmosphere at different temperatures for 1 h are investigated. The characterization of the as-implanted and annealed samples is performed using Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD) pole figures. Scanning electron microscopy (SEM) was used to view the surface topography. The results show that the orientation relationship between the YSi 2-x layer and Si substrate is YSi 2-x(0001)// Si (111) and YSi 2-x[11–20]// Si [110].

Titanium Silicidation and Secondary Defect Annihilation in ION Beam Processed Sige Layers

1995 ◽  
Vol 402 ◽  
Author(s):  
K. Kyllesbech Larsen ◽  
F. La Via ◽  
S. Lombardo ◽  
V. Raineri ◽  
R. A. Donaton ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Process Conditions ◽  
High Dose ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
Implantation Energy ◽  
Transmission Electron ◽  
Secondary Defect ◽  
20 Nm

AbstractThe secondary defect annihilation by one- and two-step titanium silicidation in SiGe layers, formed by high dose Ge implantation, has been studied systematically as a function of the Ge fluence, implantation energy, silicide thickness, and silicide process conditions. In all cases the Ti thickness was kept below 20 nm, resulting in very thin Ti silicide layers typically less than 40 nm. The silicide phase was inspected by x-ray diffraction and transmission electron diffraction. Channelling Rutherford backscattering spectrometry and transmission electron microscopy were used to follow the end of range dislocation loop annihilation as a function of the silicide process conditions. The end of range loop annealing and the influence of silicidation is presented in this paper for Ge fluences above 3×1015 cm−2 and energies ranging from 70 keV to 140 keV. A model based on loop coarsening is presented which describes the observed loop annihilation behaviour.

High quality GdSil.7 layers formed by high dose channeled implantation

1996 ◽  
Vol 427 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomme ◽  
H. Pattyn ◽  
G. Langouche ◽  
H. Bender
Keyword(s):  
Ion Beam ◽  
Hexagonal Phase ◽  
Hexagonal Structure ◽  
High Dose ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Better Than

AbstractThin gadolinium silicide layers have been formed by channeled ion beam synthesis. Continuous and heteroepitaxial GdSil.7 layers with a hexagonal structure and a χmin value of 10% are prepared by Gd ion implantation at 90 keV to a dose of 1.3x1017/cm2 at 450°C in Si(111) using channeled implantation. The hexagonal phase of GdSi1.7 is stable up to a temperature of 850°C. Both the crystalline quality and the phase stability are much better than the results obtained by conventional techniques. Annealing at > 900°C suddenly changes the χmin value of the silicide layer from 10% to 100%. X-ray diffraction shows that the phase has changed to orthorhombic. RBS/channeling, x-ray diffraction and transmission electron microscopy are used in this study.

Investigation of the interface reactions of Ti thin films with AlN substrate

1997 ◽  
Vol 12 (3) ◽  
pp. 846-851 ◽  
Author(s):  
Xiangjun He ◽  
Si-Ze Yang ◽  
Kun Tao ◽  
Yudian Fan
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Reaction Products ◽  
X Ray Diffraction ◽  
X Ray ◽  
Interface Reactions ◽  
Transmission Electron ◽  
Argon Ion Bombardment

Pure bulk AlN substrates were prepared by hot-pressing to eliminate the influence of an aid-sintering substance on the interface reactions. AlN thin films were deposited on Si(111) substrates to decrease the influence of charging on the analysis of metal/AlN interfaces with x-ray photoelectron spectroscopy (XPS). Thin films of titanium were deposited on bulk AlN substrates by e-gun evaporation and ion beam assisted deposition (IBAD) and deposited on AlN films in situ by e-gun evaporation. Solid-state reaction products and reaction mechanism of the Ti/AlN system annealed at various temperatures and under IBAD were investigated by XPS, transmission electron microscopy (TEM), x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS). Ti reacted with AlN to form a laminated structure in the temperature range of 600 °C to 800 °C. The TiAl3 phase was formed adjacent to the AlN substrate, TiN, and Ti4N3−x as well as Ti2N were formed above the TiAl3 layer at the interface. Argon ion bombardment during Ti evaporation promoted the interface reactions. No reaction products were detected for the sample as-deposited by evaporation. However, XPS depth profile of the Ti/AlN/Si sample showed that Ti–N binding existed at the interface between the AlN thin films and the Ti thin films.

Structure and Magnetism of Fe/Al Nanostructures Grown by Ion-Beam Sputtering

2013 ◽  
Vol 856 ◽  
pp. 294-298
Author(s):  
A. Vyas ◽  
T. Shripathi ◽  
N. Lakshmi ◽  
O.H. Seeck ◽  
A. Vij ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Ion Beam ◽  
Structural Studies ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Subsequent Growth ◽  
X Ray ◽  
Beam Sputtering ◽  
Higher Temperature ◽  
Structural And Magnetic Properties

Synchrotron based X-ray diffraction (XRD) and X-ray reflectivity (XRR) were used to study the structural and magnetic properties of ion beam sputtered Fe/Al multilayer sample (MLS) as a function of annealing temperature. The structural studies show substantial intermixing between the layers which results in multilayer of complicated structures i.e. formation of thin intermixed FeAl layer at the interface during deposition, the nucleation and precipitation of disordered FeAl layer, and its subsequent growth to Fe3Al at higher temperature. The results were also supported by TEM measurements. Magnetization decreases with increase in temperature and Curie temperature (Tc) is found to be much less than that of bulk bcc Fe.

scholarly journals A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Ruei-Cheng Lin ◽  
Tai-Kuang Lee ◽  
Der-Ho Wu ◽  
Ying-Chieh Lee
Keyword(s):  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
High Entropy Alloy ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
High Entropy ◽  
Transmission Electron ◽  
Thin Film Resistors

Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed. When the annealing temperature was at 500°C, the Ni-Cr-Si-Al-Ta films crystallized into Al0.9Ni4.22, Cr2Ta, and Ta5Si3phases. The Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300°C which exhibited the higher resistivity 2215 μΩ-cm with −10 ppm/°C of temperature coefficient of resistance (TCR).

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