scholarly journals A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Ruei-Cheng Lin ◽  
Tai-Kuang Lee ◽  
Der-Ho Wu ◽  
Ying-Chieh Lee
Keyword(s):  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
High Entropy Alloy ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
High Entropy ◽  
Transmission Electron ◽  
Thin Film Resistors

Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed. When the annealing temperature was at 500°C, the Ni-Cr-Si-Al-Ta films crystallized into Al0.9Ni4.22, Cr2Ta, and Ta5Si3phases. The Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300°C which exhibited the higher resistivity 2215 μΩ-cm with −10 ppm/°C of temperature coefficient of resistance (TCR).

scholarly journals A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 118 ◽  
Author(s):  
Ho-Yun Lee ◽  
Chi-Wei He ◽  
Ying-Chieh Lee ◽  
Da-Chuan Wu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Transmission Electronmicroscopy ◽  
Scanning Electron

Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which wasachieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition ofdysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films wereinvestigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films werecharacterized using field emission scanning electron microscopy, transmission electronmicroscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when theannealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C,the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phaseswere observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showedno MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy filmswith 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ∼2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.

Micro-Structure and Electrical Properties of Nanocrystalline Pt Thin Film Prepared By R.F. Sputtering

1992 ◽  
Vol 286 ◽  
Author(s):  
Xiangyang Mei ◽  
Mingde Tao ◽  
Hui Tan ◽  
Ying Han ◽  
Wei Tao
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Average Diameter ◽  
Prepared Film ◽  
X Ray Diffraction ◽  
Micro Structure ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Structure

ABSTRACTNanocrystalline Pt (nc-Pt) thin film was prepared by R. F. sputtering on liquid N2 cooled substrate. Transmission Electron Microscopy (TEM)analyses clearly show that the as prepared film is constructed by numerous nanometer sized particles with average diameter of about 8-9nm. The interfaces between particles can be clearly seen and the interface width is about nmm. Electron Diffraction (ED) photograph and X-ray Diffraction (XRD) spectroscopy both confirm that the nanometer sized particles in the film are ultra fine crystallites with a cubic structure. The crystallite size increases gradually with annealing temperature. The temperature coefficient of resistance (TCR) of nc-Pt film are much lower than that of polycrystalline Pt film. DC conductivity and TCR also increase gradually with the increase of annealing temperature. It is suggested that the interfaces between the nanoorystallites greatly influence the properties of nc-Pt thin film.

Influence of High-Pressure Torsion on the Microstructure and the Hardness of a Ti-Rich High-Entropy Alloy

2016 ◽  
Vol 879 ◽  
pp. 732-737 ◽  
Author(s):  
Anita Heczel ◽  
Lola Lilensten ◽  
Julie Bourgon ◽  
Loic Perrière ◽  
Jean Philippe Couzine ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
High Pressure ◽  
High Pressure Torsion ◽  
High Entropy Alloy ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Entropy ◽  
Transmission Electron ◽  
Bcc Structure

High-Pressure Torsion (HPT) is one of the most effective severe plastic deformation techniques in grain refinement. The goal of this study was to investigate the influence of HPT on the microstructure and hardness of a Ti-rich High-Entropy Alloy (HEA). The evolution of the grain size due to 1 turn of HPT was studied by transmission electron microscopy. Besides the refinement of the microstructure, a phase transition also occurred during HPT, as revealed by X-ray diffraction. The initial bcc structure transformed into a martensitic phase throughout the material. The features of this phase transformation were studied on a sample compressed to low strain values. The hardness as a function of the distance from the center in the HPT-processed disk was measured and correlated to the microstructure.

Influence of Alloying Additions on Enhancement of Soft Magnetic Properties Effect and Crystallization in FeXSiB (X=Cu, V, Co, Zr, Nb) Amorphous Alloys

2007 ◽  
Vol 130 ◽  
pp. 171-174 ◽  
Author(s):  
Z. Stokłosa ◽  
G. Badura ◽  
P. Kwapuliński ◽  
Józef Rasek ◽  
G. Haneczok ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Amorphous Alloys ◽  
Crystallization Process ◽  
Annealing Temperature ◽  
Magnetic Measurements ◽  
X Ray Diffraction ◽  
Soft Magnetic ◽  
X Ray ◽  
Second Stage ◽  
Transmission Electron

The crystallization and optimization of magnetic properties effects in FeXSiB (X=Cu, V, Co, Zr, Nb) amorphous alloys were studied by applying X-ray diffraction methods, high resolution transmission electron microscopy (HRTEM), resistometric and magnetic measurements. The temperatures of the first and the second stage of crystallization, the 1h optimization annealing temperature and the Curie temperature were determined for different amorphous alloys. Activation energies of crystallization process were obtained by applying the Kissinger method. The influence of alloy additions on optimization effect and crystallization processes was carefully examined.

Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation

2004 ◽  
Vol 19 (9) ◽  
pp. 2699-2702 ◽  
Author(s):  
C.S. Zhang ◽  
H.B Xiao ◽  
Y.J. Wang ◽  
Z.J. Chen ◽  
X.L. Cheng ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Annealing Temperature ◽  
Thermal Quenching ◽  
X Ray Diffraction ◽  
X Ray ◽  
Radiative Processes ◽  
Transmission Electron ◽  
Weak Intensity ◽  
Er Doped

Erbium and silicon were dual implanted into thermally grown SiO2 film on Si (110) substrates, followed by thermal treatment at 700–1200 °C for 30 min. The microstructure was studied by transmission electron microscope and x-ray diffraction. When the implanted films were annealed at T > 900 °C, the silicon nanocrystals (nc-Si) enwrapped by amorphous silicon (a-Si) could be observed. The thermal quenching behavior at λ = 1.535 μm and its relation with the annealling temperature were also investigated. With increasing annealing temperature, the portion of a-Si and the thermal quenching both decreased. Efficient luminescence from Er ions and weak intensity thermal quenching were obtained from the sample annealed at 1100 °C. The role of a-Si in non-radiative processes at T > 100 K is discussed.

New method for the production of bulk amorphous materials of Nd–Fe–B alloys

2005 ◽  
Vol 20 (3) ◽  
pp. 563-566 ◽  
Author(s):  
Tetsuji Saito ◽  
Hiroyuku Takeishi ◽  
Noboru Nakayama
Keyword(s):  
Electron Microscopy ◽  
Amorphous Materials ◽  
Room Temperature ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
Bulk Materials ◽  
X Ray ◽  
Transmission Electron ◽  
Melt Spun ◽  
Melt Spun Ribbons

We report a new compression shearing method for the production of bulk amorphous materials. In this study, amorphous Nd–Fe–B melt-spun ribbons were successfully consolidated into bulk form at room temperature by the compression shearing method. X-ray diffraction and transmission electron microscopy studies revealed that the amorphous structure was well maintained in the bulk materials. The resultant bulk materials exhibited the same magnetic properties as the original amorphous Nd–Fe–B materials.

EFFECT OF ANNEALING ON THE PROPERTIES OF VANADIUM PENTOXIDE FILMS PREPARED BY SOL–GEL METHOD

2014 ◽  
Vol 21 (02) ◽  
pp. 1450027 ◽  
Author(s):  
YAQIANG LIU ◽  
XUELIAN DU ◽  
XUEQIN LIU
Keyword(s):  
Vanadium Pentoxide ◽  
Annealing Temperature ◽  
Substrate Surface ◽  
Sol Gel ◽  
Amorphous Structure ◽  
Spectral Transmittance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tauc Plot ◽  
Silicon Substrate Surface

The vanadium pentoxide ( V 2 O 5) films were obtained by using sol–gel procedure and then were annealed at different temperature in air. The effect of different annealing temperatures on the composition, the microstructure, the surface morphology and the optical properties of the films were characterized by methods such as by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and spectral transmittance. The results revealed that the film annealed at 150°C has amorphous structure and dense with a smooth surface and the films annealed at 300°C and 450°C have a polycrystalline V 2 O 5 structure with preferred growth orientation along (001) planes, the c-axis and perpendicular to the silicon substrate surface. From the spectral transmittance we determined the absorption edge using the Tauc plot. The results indicated that optical bandgap of V 2 O 5 thin films decreased with annealing temperature.

Green preparation of carbon dots for Hg2+ detection and cell imaging

2020 ◽  
Vol 10 (11) ◽  
pp. 1777-1787
Author(s):  
Yadian Xie ◽  
Shanshan Wang ◽  
Ning Fu ◽  
Yan Yang ◽  
Xingliang Liu ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Carbon Dots ◽  
High Sensitivity ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Carbon And Nitrogen ◽  
Transmission Electron ◽  
Sensitivity And Selectivity ◽  
Ft Ir

Carbon dots (CDs) also nitrogen-doped CDs (N-CDs) were produced by green hydrothermal synthesis using Pea and ethanediamine as the carbon and nitrogen source, separately. Transmission electron microscopy (TEM) images displayed that the prepared CDs and N-CDs were well dispersed, had a spherical morphology. X-ray diffraction (XRD) figures of CDs and N-CDs presented a graphitic amorphous structure. Fourier transform infrared spectroscopy (FT-IR) verified that CDs and N-CDs carried many different hydrophilic groups (for example hydroxyl, carboxyl/carbonyl, amide, amino groups) on the surface, X-ray photoelectron spectroscopy (XPS) together verified this result. However, the optical properties and fluorescence quantum yield for N-CDs were obviously superior to those of CDs. Furthermore, the prepared N-CDs displayed outstanding advantages including low toxicity, satisfactory biocompatibility, and excellent chemical stability. More prominently, the prepared N-CDs could detect Hg2+ ions with high sensitivity and selectivity in both water samples and HeLa cells.

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