Photodetector Arrays in Laser-Recrystallized Silicon Integrated with an Optical Waveguide

1984 ◽  
Vol 35 ◽  
Author(s):  
R.W. Wu ◽  
H.A. Timlin ◽  
H.E. Jackson ◽  
J.T. Boyd
Keyword(s):  
Ion Implantation ◽  
Optical Waveguide ◽  
Breakdown Voltage ◽  
Dynamic Range ◽  
Leakage Currents ◽  
Photodetector Array ◽  
Laser Recrystallization ◽  
Integrated Detection ◽  
Photodetector Arrays ◽  
Waveguide Surface

ABSTRACTIntegrated detection of light propagating in an optical waveguide by a photodetector array fabricated directly on the waveguide surface is demonstrated. Laser recrystallization of LPCVD polysilicon patterned with periodically-spaced anti-reflection stripes is utilized. Lateral p-i-n photodiode elements formed by ion implantation are characterized by reverse leakage currents of < 10−11 amp and a typical breakdown voltage of 50 volts. Optical response is found to be linear over a dynamic range of greater than 55 dB.

Subboundary Free Submicronic Devices on Laser-Recrystallized Silicon Oninsulator

1984 ◽  
Vol 35 ◽  
Author(s):  
A.J. Auberton-Herve ◽  
J.P. Joly ◽  
J.M. Hode ◽  
J.C. Castagna
Keyword(s):  
Channel Length ◽  
Silicon On Insulator ◽  
Ring Oscillator ◽  
Mos Transistors ◽  
Seed Structure ◽  
Leakage Currents ◽  
Industrial Processing ◽  
Laser Recrystallization ◽  
Dynamic Performances ◽  
Lateral Epitaxy

ABSTRACTSeeding from bulk silicon (lateral epitaxy) has been used in Ar+ laser recrystallization to achieve subboundary free silicon on insulator areas. On these areas C.MOS devices have been performed using almost entirely the standard processing steps of a bulk micronic C-MOS technology. n -MOS transistors with channel length as small as 0.3 um have shown very small leakage currents. This is attributed especially to the lack of subboundaries. A 40 % increase in the dynamic performances in comparison with equivalent size C-MOS bulk devices has been obtained (93 ps of delay time per stage for a 101 stages ring oscillator with 0.8 μm of channel length). This is the best result presented so far on recrystallized SOI. No special requirements are needed in the lay out of the circuit with the chosen seed structure. Furthermore an industrial processing rate for the laser recrystallization processing has been achieved using an elliptical laser beam, a high scan velocity (30 cm/s) and a 100 μm line to line scan step (a 4' wafer in 4 minutes).

Ga2O3 photodetector arrays for solar-blind imaging

2019 ◽  
Vol 7 (9) ◽  
pp. 2557-2562 ◽  
Author(s):  
Yan-Cheng Chen ◽  
Ying-Jie Lu ◽  
Qian Liu ◽  
Chao-Nan Lin ◽  
Juan Guo ◽  
...  
Keyword(s):  
Photodetector Array ◽  
Solar Blind ◽  
Photodetector Arrays

A multi-channel Ga2O3 photodetector array with 16 cells was fabricated to realize solar-blind imaging.

scholarly journals Erratum: Quartz optical waveguide by ion implantation

1974 ◽  
Vol 24 (6) ◽  
pp. 294-294 ◽  
Author(s):  
D. T. Y. Wei ◽  
W. W. Lee ◽  
L. R. Bloom
Keyword(s):  
Ion Implantation ◽  
Optical Waveguide

Planar optical waveguide in potassium titanyl arsenate formed by oxygen ion implantation at low doses

2006 ◽  
Vol 88 (1) ◽  
pp. 011114 ◽  
Author(s):  
Yi Jiang ◽  
Ke-Ming Wang ◽  
Xue-Lin Wang ◽  
Chuan-Lei Jia ◽  
Lei Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Waveguide ◽  
Low Doses ◽  
Planar Optical Waveguide ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

Depth Profile Of Point Defects In Ion Implanted n+p and p+n Junctions Formed By 450°C Post-Implantation Annealing And Impact Of Defects On Junction Characteristics

1996 ◽  
Vol 442 ◽  
Author(s):  
Mauricio Massazumi Oka ◽  
Akira Nakada ◽  
Yukio Tamai ◽  
Kei Kanemoto ◽  
Tadashi Shibata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Substrate Type ◽  
Leakage Currents ◽  
Defect Clusters ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Point Defect Clusters ◽  
Ion Species ◽  
Post Implantation

AbstractIt is shown that defects generated by ion implantation, remaining after annealing at low temperature, are deep-distributed in the bulk silicon and their amount is demonstrated to be function of the substrate type and the implanted ion species. The confirmation that defects penetrate deeply into the silicon is made by a new method that consists in damaging by ion implantation a previously formed pn junction that shows very low leakage current and has a deep junction. It is proposed that the dopants in the substrate act as nucleation centers for the formation of point defect clusters and that these clusters actually degrade the junction. It was found that point defects penetrate much more deeply in p+n junctions than in n+p junctions. It was also found that BF2+ introduces much more defects into the silicon than As+, owing to the presence of fluorine. The leakage currents at 5 V of n+p and p+n diodes made by implantation of P+ and B+, respectively, could be lowered by one to two orders of magnitude with respect to values obtained by implantation of As+ and BF2+ because the former ones produce less defects than the latter.

The formation of optical waveguide in KTP crystal by combining ion implantation with ion exchange

2009 ◽  
Author(s):  
Xianbing Ming ◽  
Fei Lu ◽  
Xiaomei Wang ◽  
Ming Chen ◽  
Xiangzhi Liu
Keyword(s):  
Ion Exchange ◽  
Ion Implantation ◽  
Optical Waveguide ◽  
Ktp Crystal

Formation of Optical Waveguide by Ion-Implantation into Fused Quartz

1972 ◽  
Author(s):  
H. Aritome ◽  
T. Ikegami ◽  
T. Nishimura ◽  
K. Masuda ◽  
S. Namba
Keyword(s):  
Ion Implantation ◽  
Optical Waveguide ◽  
Fused Quartz
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