Aspects of Crystal Quality of Si (100) Films Grown by Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
W. -X. Ni ◽  
A. Henry ◽  
J. O. Ekberg ◽  
G. V. Hansson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Mechanical Stress ◽  
Chemical Etching ◽  
Molecular Beam ◽  
Crystal Quality ◽  
Radiant Heating ◽  
Resistive Heating ◽  
Good Crystal Quality ◽  
Resistively Heated

ABSTRACTSilicon layers grown by molecular beam epitaxy, using both direct resistive heating and indirect radiant heating of the substrate, have been evaluated by photoluminescence measurements, diode I-V characterization, and chemical etching tests. The results show that large densities of defects could be introduced when resistively heated substrates were experiencing thermo-mechanical stress. Films with good crystal quality were grown using a carefully designed radiant type heater.

Improving the Quality of a Heteroepitaxial CaF2 Overlayer by Rapid Post Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
Loren Pfeiffer ◽  
Julia M. Phillips ◽  
T.P. Smith ◽  
W. M. Augustyniak ◽  
K. W. West
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Mechanical Stress ◽  
Short Duration ◽  
Chemical Etching ◽  
Molecular Beam ◽  
Dielectric Breakdown ◽  
Post Annealing ◽  
Random Direction

ABSTRACTWe show that post anneals of short duration at high temperature can markedly improve the quality of CaF2 films grown by molecular beam epitaxy (MBE) on Si (100). Anneals at 1100°C for 20 sec in an Ar ambient improved χmin, the ratio of backscattered 1.8 MeV He4 ions in the aligned to random direction, from as-grown values of .07 to .26, to post post-anneal values of .03 to .045. This is the best χmin yet reported for the CaF2:Si system. The post-annealed films also show improved resistance to chemical etching and mechanical stress, and increased dielectric breakdown voltages.

Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers

2000 ◽  
Vol 39 (Part 2, No. 4B) ◽  
pp. L330-L333 ◽  
Author(s):  
Akihiko Kikuchi ◽  
Takayuki Yamada ◽  
Shinichi Nakamura ◽  
Kazuhide Kusakabe ◽  
Daisuke Sugihara ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Crystal Quality ◽  
Rf Plasma ◽  
Intermediate Layers

scholarly journals Влияние степени нитридизации сапфира и обогащения алюминием зародышевого слоя на структурные свойства слоев AlN

2018 ◽  
Vol 52 (6) ◽  
pp. 643
Author(s):  
Т.В. Малин ◽  
Д.С. Милахин ◽  
В.Г. Мансуров ◽  
Ю.Г. Галицын ◽  
А.С. Кожухов ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Crystal Quality ◽  
Sapphire Substrates

AbstractThe effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.

The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy

2007 ◽  
Vol 308 (2) ◽  
pp. 406-411 ◽  
Author(s):  
Hanchao Gao ◽  
Wenxin Wang ◽  
Zhongwei Jiang ◽  
Linsheng Liu ◽  
Junming Zhou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Parameter ◽  
Crystal Quality ◽  
Parameter Influence

Improvement of crystal quality of GaN by modulated molecular beam epitaxy

2002 ◽  
Author(s):  
K-T. Liu ◽  
T. Tezuka ◽  
S. Sugita ◽  
Y. Watari ◽  
Y. Horikoshi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Crystal Quality

Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy

2010 ◽  
Vol 19 (11) ◽  
pp. 116801 ◽  
Author(s):  
Fan Ren ◽  
Zhi-Biao Hao ◽  
Jian-Nan Hu ◽  
Chen Zhang ◽  
Yi Luo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Crystal Quality ◽  
Nucleation Layer
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