Dynamic Annealing Phenomena and the Origin of RTA-Induced “Hairpin” Dislocations

1984 ◽  
Vol 35 ◽  
Author(s):  
W. Maszara ◽  
D.K. Sadana ◽  
G.A. Rozgonyi ◽  
T. Sands ◽  
J. Washburn ◽  
...  
Keyword(s):  
Solid Phase ◽  
Growth Front ◽  
Solid Phase Epitaxy ◽  
Pipe Diffusion ◽  
Burgers Vector ◽  
Low Temperature Annealing ◽  
Nucleation Sites ◽  
Perfect Dislocation ◽  
And Diffusion ◽  
Post Implantation

ABSTRACTThe geometry, origin, and diffusion along hairpin defects in Si were investigated using TEM and SIMS techniques. The defect that grows from the amorphous-crystalline (a/c) interface following solid phase epitaxy growth front was found to be a perfect dislocation with a/2(101) Burgers vector. Misoriented microcrystallites within the a/c transition region are proposed to be nucleation sites for the hairpin dislocations. The density of the crystallites increases with an overall coarsening of the interface which occurs during dynamic annealing processes stimulated by implantation or post-implantation low temperature annealing. Hairpin dislocations were found to pipe-diffuse boron at much higher rates than bulk processes significantly shifting dopant profiles. The diffusion coefficient of boron pipe diffusion at 1150°C was found to be about 104 times higher than the bulk one.

Polycrystalline Si Films Fabricated by Low Temperature Selective Nucleation and Solid Phase Epitaxy Process

1997 ◽  
Vol 485 ◽  
Author(s):  
Claudine M. Chen ◽  
Harry A. Atwater
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Crystal Growth ◽  
Incubation Time ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Grain Sizes ◽  
Random Nucleation ◽  
Nucleation Sites ◽  
Si Films

AbstractWith a selective nucleation and solid phase epitaxy (SNSPE) process, grain sizes of 10 μm have been achieved to date at 620°C in 100 nrm thick silicon films on amorphous SiO2, with potential for greater grain sizes. Selective nucleation occurs via a thin film reaction between a patterned array of 20 rnm thick indium islands which act as heterogeneous nucleation sites on the amorphous silicon starting material. Crystal growth proceeds by lateral solid phase epitaxy from the nucleation sites, during the incubation time for random nucleation. The largest achievable grain size by SNSPE is thus approximately the product of the incubation time and the solid phase epitaxy rate. Electronic dopants, such as B, P, and Al, are found to enhance the solid phase epitaxy rate and affect the nucleation rate.

Role of the Surface Steps on the Growth of CrSi2 on {111} Silicon.

1995 ◽  
Vol 402 ◽  
Author(s):  
André M. Rocher ◽  
André Oustry ◽  
Marie José David ◽  
Michel Caumont
Keyword(s):  
Elastic Energy ◽  
Solid Phase ◽  
Misfit Dislocations ◽  
Solid Phase Epitaxy ◽  
Step Width ◽  
Orientation Relationships ◽  
Edge Type ◽  
Burgers Vector ◽  
Surface Steps

AbstractCrSi2 layers grown by solid phase epitaxy on a nominal (111) Si surface exhibit in the same proportion two different orientation relationships, named A and B. When CrSi2 is deposited on a 8° vicinal (111) Si surface, B-type orientation is favoured with respect to the A type. This result can be explained by the fact that both the step width introduced by the miscut and the planar coincidence between {1100}Crsi2 and {111}Si are nearly equal to 23Å. Edge type misfit dislocations are observed at the interface with the same spacing. Their Burgers vector component along [111] is almost compensated by the atomic steps along the <110> directions. The role of the steps is discussed in term of elastic energy. Steps introduce misfit dislocations which make possible coherent growth of the B type orientation.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

Assessment of GaAs heteroepitaxial films grown on silicon‐on‐sapphire upgraded by double solid phase epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1756-1758 ◽  
Author(s):  
J. B. Posthill ◽  
R. J. Markunas ◽  
T. P. Humphreys ◽  
R. J. Nemanich ◽  
K. Das ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy

Kinetics of arsenic-enhanced solid phase epitaxy in silicon

2004 ◽  
Vol 95 (8) ◽  
pp. 4427-4431 ◽  
Author(s):  
B. C. Johnson ◽  
J. C. McCallum
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetics Of

CrSi2/Si(111): Growth of monotype domains by solid phase epitaxy on a vicinal surface

1994 ◽  
Vol 12 (6) ◽  
pp. 3018-3022 ◽  
Author(s):  
André Rocher ◽  
André Oustry ◽  
Marie Josée David ◽  
Michel Caumont
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Vicinal Surface

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of
Sign in / Sign up

Export Citation Format

Share Document