A Test of Two Solute-Trapping Models

1984 ◽  
Vol 35 ◽  
Author(s):  
M. J. Aziz ◽  
J. Y. Tsao ◽  
M. O. Thompson ◽  
P. S. Peercy ◽  
C. W. White ◽  
...  
Keyword(s):  
Phase Diagram ◽  
High Resolution ◽  
Pulsed Laser ◽  
Dilute Solutions ◽  
Laser Melting ◽  
Solute Trapping ◽  
Segregation Behavior

ABSTRACTTwo solute trapping models are compared. They are shown to predict identical behavior at any given end of a phase diagram but different behavior as the phase diagram is traversed. The segregation behavior of dilute solutions of Ge in Si (ke < 1) and of Si in Ge (ke > 1) during regrowth from pulsed-laser melting is being studied using transient conductance, high resolution RBS, and SIMS. Our results to date suggest a significant amount" of solute trapping (k —> 1) of Ge in Si and of Si in Ge. Such a result would be inconsistent with the predictions of one of the models.

Velocity and Orientation Dependence of Solute Trapping

1985 ◽  
Vol 57 ◽  
Author(s):  
M. J. Aziz ◽  
J. Y. Tsao ◽  
M. O. Thompson ◽  
P. S. Peercy ◽  
C. W. White
Keyword(s):  
Pulsed Laser ◽  
Orientation Dependence ◽  
Sufficient Accuracy ◽  
Segregation Coefficient ◽  
Solute Trapping ◽  
Impurity Atoms ◽  
Segregation Behavior ◽  
Functional Forms ◽  
Solid Liquid Interface ◽  
Solid Liquid

AbstractThe fraction of impurity atoms in the liquid at the solid-liquid interface that join the crystal, known as the segregation coefficient k, during rapid crystal growth is known to deviate away from the equilibrium value towards unity as the interface speed v increases. Several plausible models have been proposed that account qualitatively for this behavior with different functional forms of k(v). We report measurements of the segregation behavior during rapid solidification following pulsed laser melting of Bi-implanted Si. The velocity dependence and the orientation dependence of the segregation coefficient of Bi in Si has been determined to sufficient accuracy to allow us to distinguish between models. Implications for the mechanism of solute trapping are discussed.

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting

2007 ◽  
Vol 25 (6) ◽  
pp. 1847 ◽  
Author(s):  
Malek Tabbal ◽  
Taegon Kim ◽  
Jeffrey M. Warrender ◽  
Michael J. Aziz ◽  
B. L. Cardozo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Silicon Based

Pulsed Laser Melting: The Effect of Implanted Solutes on the Resolidification Velocity

1983 ◽  
Vol 23 ◽  
Author(s):  
G. J. Galvin ◽  
J. W. Mayer ◽  
P. S. Peercy
Keyword(s):  
Electrical Conductance ◽  
Pulsed Laser ◽  
Solute Concentration ◽  
Atomic Percent ◽  
Supersaturated Solution ◽  
Solidification Velocity ◽  
Laser Melting ◽  
Solid Interface ◽  
Solution Studies ◽  
Nonequilibrium Segregation

ABSTRACTTransient electrical conductance has been used to measure the resolidification velocity in silicon containing implanted solutes. Nonequilibrium segregation of the solutes occurs during the rapid resolidification following pulsed laser melting. The velocity of the liquid-solid interface is observed to depend on the type and concentration of the solute. A 25% reduction in solidification velocity is observed for an implanted indium concentration of three atomic percent. Implanted oxygen is also shown to reduce the solidification velocity. The dependence of the velocity on solute concentration impacts a variety of segregation, trapping and supersaturated solution studies.

Ti-doped Gallium Phosphide Layers with Concentrations Above the Mott Limit

2009 ◽  
Vol 1210 ◽  
Author(s):  
Javier Olea Ariza ◽  
David Pastor ◽  
María Toledano-Luque ◽  
Ignacio Mártil ◽  
Germán González-Díaz ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Vibrational Mode ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Laser Melting ◽  
Intermediate Band ◽  
X Ray ◽  
Tof Sims ◽  
Crystalline Domains ◽  
Secondary Ion

AbstractWe have studied the Pulsed-Laser Melting (PLM) effects on Ti implanted GaP to form an Intermediate Band (IB). Structural analysis has been carried out by means of Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), Raman spectroscopy and Glancing Incidence X-Ray Diffraction (GIXRD). After the PLM annealing, Ti concentration is over the Mott limit. Nevertheless, the Raman spectra show a forbidden TO vibrational mode of GaP. This result suggests the formation of crystalline domains with a different orientation in the annealed region regarding to the GaP unannealed substrate. This conclusion has been corroborated by GIXRD measurements. As a result of the polycrystalline lattice, a drop of the mobility is produced.

scholarly journals Influence of pulse frequency on synthesis of nano and submicrometer spherical particles by pulsed laser melting in liquid

2018 ◽  
Vol 435 ◽  
pp. 529-534 ◽  
Author(s):  
Shota Sakaki ◽  
Hiroshi Ikenoue ◽  
Takeshi Tsuji ◽  
Yoshie Ishikawa ◽  
Naoto Koshizaki
Keyword(s):  
Pulsed Laser ◽  
Pulse Frequency ◽  
Spherical Particles ◽  
Laser Melting

scholarly journals Modeling pulsed-laser melting of embedded semiconductor nanoparticles

2011 ◽  
Vol 110 (9) ◽  
pp. 094307 ◽  
Author(s):  
C. A. Sawyer ◽  
J. Guzman ◽  
C. N. Boswell-Koller ◽  
M. P. Sherburne ◽  
J. P. Mastandrea ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Semiconductor Nanoparticles ◽  
Laser Melting
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