Influence of Silicon Incorporation on the Properties of Hard a-C:H Films

1994 ◽  
Vol 349 ◽  
Author(s):  
A.L. Baia Neto ◽  
R.A. Santos ◽  
F.L. Freire ◽  
W. Beyer ◽  
S.S. Camargo
Keyword(s):  
Glow Discharge ◽  
Internal Stress ◽  
Deposition Rate ◽  
Infrared Absorption ◽  
High Hardness ◽  
Large Decrease ◽  
Gaseous Mixtures ◽  
Residual Internal Stress ◽  
Decomposition System ◽  
Hydrogen Effusion

ABSTRACT- Results on the properties of silicon incorporated hard a-C:H films deposited on the cathode of a glow discharge decomposition system using methane and silane gaseous mixtures are reported. Obtained samples showed an increased deposition rate, high hardness comparable to that of a-C:H, and a large decrease of the internal stress upon silicon incorporation. The structure of the samples seems to be similar to diamond-like a-C:H, as revealed by the total hydrogen content, infrared absorption and hydrogen effusion experiments. Our results indicate that the observed reduction of residual internal stress may be attributed to a less compact material and/or to a smaller density of voids containing hydrogen in comparison to pure a-C:H.

scholarly journals Fabrication of Ni-Mn Microprobe Structure with Low Internal Stress and High Hardness by Employing DC Electrodeposition

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Kuan-Hui Cheng ◽  
Fu-Je Chen ◽  
Chun-Ying Lee ◽  
Chao-Sung Lin ◽  
Jung-Tang Huang ◽  
...  
Keyword(s):  
Internal Stress ◽  
Current Density ◽  
High Hardness ◽  
Power Source ◽  
Manganese Sulphate ◽  
Microelectronic Devices ◽  
Dc Power ◽  
Coating Composition ◽  
Mn Content ◽  
Columnar Grain

Due to its widely tunable mechanical property and incompatibility with most solders, Ni-Mn alloy can become a viable candidate in the fabrication of testing probe for microelectronic devices. In this study, the electrodeposition of Ni-Mn alloy in nickel sulphamate electrolyte with the addition of manganese sulphate was investigated under direct current (DC) power source. The effects of current density and Mn2+concentration in the electrolyte on the coating composition, cathodic efficiency, microstructure and mechanical properties were explored. The results showed that the raise of the Mn2+concentration in the electrolyte alone did not effectively increase the Mn content in the coating but reduce the cathodic efficiency. On the other hand, increasing the current density facilitated the codeposition of the Mn and rendered the crystallite from coarse columnar grain to the refined one. Thus, both hardness and internal stress of the coating increased. The fabrication of testing probes at 1 A/dm2was shown to satisfy the high hardness, low internal stress, reasonable fatigue life, and nonsticking requirements for this microelectronic application.

scholarly journals Investigations in Anti-Impact Performance of TiN Coatings Prepared by Filtered Cathodic Vacuum Arc Method under Different Substrate Temperatures

Coatings ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 840
Author(s):  
Da Huang ◽  
Weifeng He ◽  
Xin Cao ◽  
Yang Jiao
Keyword(s):  
Substrate Temperature ◽  
Internal Stress ◽  
Adhesion Strength ◽  
Great Influence ◽  
High Hardness ◽  
Underlying Mechanism ◽  
Vacuum Arc ◽  
Impact Performance ◽  
Tin Coatings ◽  
Substrate Temperatures

In this study, the anti-impact performance of the TiN coatings prepared under various substrate temperatures (35, 200, 400, and 600 °C) were evaluated using a cyclic impact tester under 104 cycles. Moreover, the microstructure and anti-impact performance-related mechanical properties (adhesion strength and nano-hardness) were investigated to reveal the underlying mechanism of how the substrate temperature affects the anti-impact performance of the coatings. The results showed that the substrate temperature has a great influence on the internal stress, nano-hardness, and adhesion strength as well as the anti-impact performance of TiN coatings, and the coatings prepared under 400 °C exhibit the best impact resistance. The small internal stress, strong adhesion strength as well as high hardness and H3/E2 value for the 400 °C prepared coatings are the main contributes.

Absorption Strengths of Si-H Vibrational Modes in Hydrogenated Silicon

1998 ◽  
Vol 507 ◽  
Author(s):  
W. Beyer ◽  
M.S. Abo Ghazala
Keyword(s):  
Refractive Index ◽  
Hydrogen Concentration ◽  
Infrared Absorption ◽  
Molecular Hydrogen ◽  
Vibrational Modes ◽  
Absorption Data ◽  
Hydrogenated Silicon ◽  
Hydrogen Density ◽  
The Absolute ◽  
Hydrogen Effusion

ABSTRACTInfrared absorption data of various Si:H samples involving several series of a-Si:H films as well as µc-Si:H and c-Si:H samples were analyzed to obtain ratios of the absorption strengths A of the Si-H stretching modes at 2000 and 2100 cm−1 and of the Si-H wagging mode at 640 cm−1. Hydrogen effusion measurements were used to obtain the absolute values of A. The results suggest essentially equal absorption strengths for the two Si-H stretching modes and a ratio of wagging and stretching absorption strengths independent of hydrogen density NH. Films with predominant 2100 cm−1stretching absorption show a stronger sample dependence of A than observed for samples with predominant 2000 cm−1absorption. A slight increase of the absorption strength of the Si-H wagging and stretching modes with rising hydrogen concentration is observed for a-Si:H films and is attributed to the decrease of the refractive index. Enhanced A values of µc-Si:H samples compared to a-Si:H samples point to the presence of molecular hydrogen.

Diffusion and Effusion of Hydrogen in Microcrystalline Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
W. Beyer ◽  
P. Hapke ◽  
U. Zastrow
Keyword(s):  
Diffusion Coefficient ◽  
Infrared Absorption ◽  
Cyclotron Resonance ◽  
Hydrogen Diffusion ◽  
Electron Cyclotron Resonance ◽  
Microcrystalline Silicon ◽  
Hydrogen Diffusion Coefficient ◽  
Internal Surfaces ◽  
Substrate Temperatures ◽  
Hydrogen Effusion

ABSTRACTThe diffusion and effusion of hydrogen in hydrogenated microcrystalline silicon films deposited in an electron cyclotron resonance reactor were studied for various deposition temperatures Ts. For deposition temperatures below 250°C, hydrogen effusion is found to be dominated by desorption of hydrogen from internal surfaces followed by rapid out-diffusion of H2. Higher substrate temperatures result in an increased hydrogen stability suggesting the growth of a more compact material. For this latter type of samples, a hydrogen diffusion coefficient similar as in compact plasma-grown a-Si:H films is found despite a different predominant bonding of hydrogen according to infrared absorption.

scholarly journals Residual internal stress optimization for EPON 828/DEA thermoset resin using fiber Bragg grating sensors

2015 ◽  
Author(s):  
Garth D. Rohr ◽  
Roger D. Rasberry ◽  
Amy K. Kaczmarowski ◽  
Mark E. Stavig ◽  
Cory S. Gibson ◽  
...  
Keyword(s):  
Internal Stress ◽  
Fiber Bragg Grating ◽  
Bragg Grating ◽  
Fiber Bragg Grating Sensors ◽  
Thermoset Resin ◽  
Residual Internal Stress ◽  
Stress Optimization

scholarly journals Modeling of a–Si:H deposition in a dc glow discharge reactor

1992 ◽  
Vol 7 (8) ◽  
pp. 2160-2181 ◽  
Author(s):  
Dariusz Orlicki ◽  
Vladimir Hlavacek ◽  
Hendrik J. Viljoen
Keyword(s):  
Glow Discharge ◽  
Deposition Rate ◽  
Molar Fraction ◽  
Plasma Chemistry ◽  
Ionization Rate ◽  
Flow Speed ◽  
Dissociation Rate ◽  
Dc Glow Discharge ◽  
Reactor Model ◽  
Amorphous Hydrogenated Silicon

PECVD reactors are increasingly used for the manufacturing of electronic components. This paper presents a reactor model for the deposition of amorphous hydrogenated silicon in a dc glow discharge of Ar–SiH4 The parallel-plate configuration is used in this study. Electron and positive ion densities have been calculated in a self-consistent way. A macroscopic description that is based on the Boltzmann equation with forwardscattering is used to calculate the ionization rate. The dissociation rate constant of SiH4 requires knowledge about the electron energy distribution function. Maxwell and Druyvesteyn distributions are compared and the numerical results show that the deposition rate is lower for the Druyvesteyn distribution. The plasma chemistry model includes silane, silyl, silylene, disilane, hydrogen, and atomic hydrogen. The sensitivity of the deposition rate toward the branching ratios SiH3 and SiH2 as well as H2 and H during silyl dissociation is examined. Further parameters that are considered in the sensitivity analysis include anode/cathode temperatures, pressure, applied voltage, gap distance, gap length, molar fraction of SiH4, and flow speed. This work offers insight into the effects of all design and control variables.

Helium Versus Hydrogen Dilution of Silane in the Deposition of Polymorphous Silicon Films: Effects on the Structure and the Transport Properties

2003 ◽  
Vol 762 ◽  
Author(s):  
O. Saadane ◽  
S. Lebib ◽  
A.V. Kharchenko ◽  
V. Suendo ◽  
C. Longeaud ◽  
...  
Keyword(s):  
Transport Properties ◽  
Deposition Rate ◽  
Diffusion Length ◽  
Good Alternative ◽  
Silicon Films ◽  
Rf Power ◽  
Hydrogen Incorporation ◽  
Hydrogen Dilution ◽  
Hole Diffusion Length ◽  
Hydrogen Effusion

AbstractWe compare the deposition rate, hydrogen incorporation and optoelectronic properties of hydrogenated polymorphous silicon films produced either by the decomposition of silane-hydrogen or of silane-helium mixtures. Our results clearly show that He dilution allows to drastically reduce the RF power needed to achieve the same deposition rate as in the case of H2 dilution. Infrared spectroscopy and hydrogen effusion experiments show clear differences in the hydrogen bonding and content in both series of films. Interestingly, both He and hydrogen dilution result in films with improved transport properties, in particular the hole diffusion length, with respect to standard amorphous silicon. These results indicate that He dilution is a good alternative to H2 dilution to prepare intrinsic layers for solar cells.

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