The Radiation Effect Mechanism of Some Rare Earth Doped BaF2 Crystal

1994 ◽  
Vol 348 ◽  
Author(s):  
Gu Mu ◽  
Chen Lingyan ◽  
Du Jie ◽  
Xiang Kaihua ◽  
Chen Gang ◽  
...  

ABSTRACTIn this paper, we used the Discrete Variational Xα, (DV-Xα) method to calculate the energy level of some rare earth doped BaF2 crystals and indicated that the Eu, Dy and Yb elements will change their valence from +3 to +2 under irradiation and thus change the optical properties of the crystals.The results show that this radiation effect model presented agree well with experiments.

2016 ◽  
Vol 46 (2) ◽  
pp. 687-708 ◽  
Author(s):  
Ayush Khare ◽  
Shubhra Mishra ◽  
D. S. Kshatri ◽  
Sanjay Tiwari

2004 ◽  
Vol 458 (1-2) ◽  
pp. 274-280 ◽  
Author(s):  
H. Guo ◽  
W. Zhang ◽  
L. Lou ◽  
A. Brioude ◽  
J. Mugnier

2005 ◽  
Vol 892 ◽  
Author(s):  
Katharina Lorenz ◽  
E. Nogales ◽  
R. Nédélec ◽  
J. Penner ◽  
R. Vianden ◽  
...  

AbstractGaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 °C in vacuum, in flowing nitrogen gas or a mixture of NH3 and N2. Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N2 already show the first signs of surface dissociation at 1000 °C. At higher temperature, Ga droplets form at the surface. However, samples annealed in NH3 + N2 exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200 °C in NH3+N2 the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed.


2016 ◽  
Vol 170 ◽  
pp. 707-717 ◽  
Author(s):  
Rafael Ramiro Pereira ◽  
Felipe Thomaz Aquino ◽  
Alban Ferrier ◽  
Philippe Goldner ◽  
Rogéria R. Gonçalves

1996 ◽  
Vol 422 ◽  
Author(s):  
B. W. Wessels

AbstractThe optical properties of rare-earth impurities in InGaP and the factors which influence their luminescence efficency are presented. Basic energy transfer processes are described. Practical devices that utilize characteristic rare-earth luminescence are reported.


1997 ◽  
Vol 97 (1-4) ◽  
pp. 465-470 ◽  
Author(s):  
B.-T Melekh ◽  
V.M Egorov ◽  
Yu.M Baikov ◽  
N.F Kartenko ◽  
Yu.N Filin ◽  
...  

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