Studies on SiBN(C)-ceramics: Oxidation- and Crystallization Behavior Lead the Way to Applications

1994 ◽  
Vol 346 ◽  
Author(s):  
H.-P. Baldus ◽  
G. Passing
Keyword(s):  
Crystallization Behavior ◽  
Bulk Material ◽  
Single Source ◽  
Single Source Precursor ◽  
High Oxidation ◽  
C And N ◽  
High Oxidation Resistance ◽  
Kinetics Of ◽  
Very High ◽  
Thermal Stability Of

ABSTRACTThe thermal stability of amorphous borosilicon nitride (Si3B3N7) and borosilicon carbonitride (SiBN3C) between 1000°C and 2000oC both in air and under inert conditions is reported. Both materials are derived from polymerization and subsequent pyrolysis of a “single source” precursor. On heating in vacuum or nitrogen SiBN3C remains amorphous up to lCWC whereas Si3B3N7 crystallizes at about 1800°C under these conditions. At about 2000^ the SiBN(C)-materials decompose into SiC, BN, B4C and N2.Oxidation studies performed by TEM- and SEM-investigations of oxidized borosilicon carbonitride grains reveal that an interlayer consisting of B, N, and only little O is formed between the oxide scale on the surface and the inner bulk material. The interlayer does not disappear at temperatures above 1450°C in contrast to the Si2N20-interiayer observed on oxidized silicon nitride. The oxidation kinetics of the new ceramics are established in the range from 1000°C to 1600°C indicating a very high oxidation resistance. Possible applications as matrix materials as well as materials for fibers and coatings are discussed.

CVD Growth Kinetics of HfB2Thin Films from the Single-Source Precursor Hf(BH4)4

2006 ◽  
Vol 18 (21) ◽  
pp. 5088-5096 ◽  
Author(s):  
Yu Yang ◽  
Sreenivas Jayaraman ◽  
Do Young Kim ◽  
Gregory S. Girolami ◽  
John R. Abelson
Keyword(s):  
Growth Kinetics ◽  
Single Source ◽  
Single Source Precursor ◽  
Cvd Growth ◽  
Kinetics Of

Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors

1999 ◽  
Vol 595 ◽  
Author(s):  
R. A. Fischer ◽  
A. Wohlfart ◽  
A. Devi ◽  
W. Rogge
Keyword(s):  
Thin Films ◽  
Growth Kinetics ◽  
Film Growth ◽  
High Growth ◽  
Near Band Edge ◽  
Single Source ◽  
Rocking Curve ◽  
Single Source Precursor ◽  
Kinetics Of ◽  
Reactor Pressure

AbstractWe report the growth kinetics of GaN thin films using the single source precursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wall reactor. Transparent, smooth, epitaxial (FWHM of the αGaN 0002 rocking curve = 129.6 arcsec) and stoichiometric GaN films were grown on c-plane Al2O3 substrates in the temperature range of 870 – 1320K and high growth rates were obtained (up to 4000 nm/hr). Film growth was studied as a function of substrate temperature as well as reactor pressure. Although high quality films were obtained without using any additional source of nitrogen such as ammonia, we have investigated the effect of ammonia on the growth and properties of the resulting films. The films obtained were characterized by XRD, RBS, XPS, AES, AFM, SEM and the room temperature PL spectroscopy of GaN films grown exhibited the correct near band edge luminescence at 3.45 eV.

scholarly journals Growth kinetics of GaN thin films grown by OMVPE using single source precursors

2000 ◽  
Vol 5 (S1) ◽  
pp. 152-158
Author(s):  
R. A. Fischer ◽  
A. Wohlfart ◽  
A. Devi ◽  
W. Rogge
Keyword(s):  
Thin Films ◽  
Growth Kinetics ◽  
Film Growth ◽  
High Growth ◽  
Near Band Edge ◽  
Single Source ◽  
Rocking Curve ◽  
Single Source Precursor ◽  
Kinetics Of ◽  
Reactor Pressure

We report the growth kinetics of GaN thin films using the single source precursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wall reactor. Transparent, smooth, epitaxial (FWHM of the α-GaN 0002 rocking curve = 129.6 arcsec) and stoichiometric GaN films were grown on c-plane Al2O3 substrates in the temperature range of 870 – 1320K and high growth rates were obtained (up to 4000 nm/hr). Film growth was studied as a function of substrate temperature as well as reactor pressure. Although high quality films were obtained without using any additional source of nitrogen such as ammonia, we have investigated the effect of ammonia on the growth and properties of the resulting films. The films obtained were characterized by XRD, RBS, XPS, AES, AFM, SEM and the room temperature PL spectroscopy of GaN films grown exhibited the correct near band edge luminescence at 3.45 eV.

Morphology of Ti37Al63 Thin-Films Deposited by Magnetron Sputtering

2004 ◽  
Vol 812 ◽  
Author(s):  
N. David Theodore ◽  
Hyunchul C. Kim ◽  
Kaustubh S. Gadre ◽  
James W. Mayer ◽  
Terry L. Alford
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
High Melting ◽  
Melting Points ◽  
High Oxidation ◽  
Microstructural Behavior ◽  
High Oxidation Resistance ◽  
Thermal Stability Of ◽  
Compound Target

AbstractTiAl based thin-films possess high oxidation-resistance and high melting points, making them possible candidates for application in electronics. The behavior of the films upon exposure to various temperatures is of interest for such application. In the present study, Ti37Al63 thin films were deposited onto SiO2 substrates using RF magnetron sputtering from a compound target. Anneals were performed in vacuum at temperatures ranging from 400 °C to 700 °C. The phases and microstructural behavior of the films were evaluated as a function of annealing. Microstructural behavior was correlated with resistivity changes in the films. The behavior of Ti-Al films as potential under-layers for silver metallization was also evaluated. The Ti-Al was observed to enhance the thermal stability of pure Al thin-films. The results are relevant for potential application of the films to electronics.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

Growth of InN whiskers from single source precursor

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-577-Pr3-584 ◽  
Author(s):  
A. Devi ◽  
H. Parala ◽  
W. Rogge ◽  
A. Wohlfart ◽  
A. Birkner ◽  
...  
Keyword(s):  
Single Source ◽  
Single Source Precursor

COLMONOY No. 21

Alloy Digest ◽  
1996 ◽  
Vol 45 (3) ◽  
Keyword(s):  
Cast Iron ◽  
Physical Properties ◽  
Oxidation Resistance ◽  
Base Alloy ◽  
Nickel Base Alloy ◽  
Powder Metal ◽  
High Oxidation ◽  
High Oxidation Resistance ◽  
Nickel Base

Abstract Colmonoy No. 21 is a nickel-base alloy for repairing cast iron parts. The deposit has high oxidation resistance, develops a hardness of Rockwell C 26-31, and is easily finished by filing or grinding. This datasheet provides information on composition, physical properties, and hardness. It also includes information on machining, joining, and powder metal forms. Filing Code: Ni-504. Producer or source: Wall Colmonoy Corporation.

The effect of heterotrophic yield on the assessment of the correction factor for anoxic growth

1996 ◽  
Vol 34 (5-6) ◽  
pp. 67-74 ◽  
Author(s):  
D. Orhon ◽  
S. Sözen ◽  
N. Artan
Keyword(s):  
Correction Factor ◽  
Domestic Sewage ◽  
Yield Coefficient ◽  
Heterotrophic Growth ◽  
Metabolic Processes ◽  
Anoxic Conditions ◽  
Industrial Wastewaters ◽  
Systems Modelling ◽  
Kinetics Of ◽  
Very High

For single-sludge denitrification systems, modelling of anoxic reactors currently uses the kinetics of aerobic heterotrophic growth together with a correction factor for anoxic conditions. This coefficient is computed on the basis of respirometric measurements with the assumption that the heterotrophic yield remains the same under aerobic and anoxic coditions. The paper provides the conceptual proof that the yield coefficient is significantly lower for the anoxic growth on the basis of the energetics of the related metabolic processes. This is used for the interpretation of the very high values for the correction factor experimentally determined for a number of industrial wastewaters. A default value for the anoxic heterotrophic yield coefficient is calculated for domestic sewage and compatible wastewaters and proposed for similar evaluations.

scholarly journals Ultra-high oxidation resistance of nano-structured thin films

2021 ◽  
Vol 201 ◽  
pp. 109499
Author(s):  
E. Aschauer ◽  
T. Wojcik ◽  
P. Polcik ◽  
O. Hunold ◽  
M. Arndt ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxidation Resistance ◽  
High Oxidation ◽  
High Oxidation Resistance
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