CVD Growth Kinetics of HfB2Thin Films from the Single-Source Precursor Hf(BH4)4

2006 ◽  
Vol 18 (21) ◽  
pp. 5088-5096 ◽  
Author(s):  
Yu Yang ◽  
Sreenivas Jayaraman ◽  
Do Young Kim ◽  
Gregory S. Girolami ◽  
John R. Abelson
Keyword(s):  
Growth Kinetics ◽  
Single Source ◽  
Single Source Precursor ◽  
Cvd Growth ◽  
Kinetics Of

Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors

1999 ◽  
Vol 595 ◽  
Author(s):  
R. A. Fischer ◽  
A. Wohlfart ◽  
A. Devi ◽  
W. Rogge
Keyword(s):  
Thin Films ◽  
Growth Kinetics ◽  
Film Growth ◽  
High Growth ◽  
Near Band Edge ◽  
Single Source ◽  
Rocking Curve ◽  
Single Source Precursor ◽  
Kinetics Of ◽  
Reactor Pressure

AbstractWe report the growth kinetics of GaN thin films using the single source precursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wall reactor. Transparent, smooth, epitaxial (FWHM of the αGaN 0002 rocking curve = 129.6 arcsec) and stoichiometric GaN films were grown on c-plane Al2O3 substrates in the temperature range of 870 – 1320K and high growth rates were obtained (up to 4000 nm/hr). Film growth was studied as a function of substrate temperature as well as reactor pressure. Although high quality films were obtained without using any additional source of nitrogen such as ammonia, we have investigated the effect of ammonia on the growth and properties of the resulting films. The films obtained were characterized by XRD, RBS, XPS, AES, AFM, SEM and the room temperature PL spectroscopy of GaN films grown exhibited the correct near band edge luminescence at 3.45 eV.

scholarly journals Growth kinetics of GaN thin films grown by OMVPE using single source precursors

2000 ◽  
Vol 5 (S1) ◽  
pp. 152-158
Author(s):  
R. A. Fischer ◽  
A. Wohlfart ◽  
A. Devi ◽  
W. Rogge
Keyword(s):  
Thin Films ◽  
Growth Kinetics ◽  
Film Growth ◽  
High Growth ◽  
Near Band Edge ◽  
Single Source ◽  
Rocking Curve ◽  
Single Source Precursor ◽  
Kinetics Of ◽  
Reactor Pressure

We report the growth kinetics of GaN thin films using the single source precursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wall reactor. Transparent, smooth, epitaxial (FWHM of the α-GaN 0002 rocking curve = 129.6 arcsec) and stoichiometric GaN films were grown on c-plane Al2O3 substrates in the temperature range of 870 – 1320K and high growth rates were obtained (up to 4000 nm/hr). Film growth was studied as a function of substrate temperature as well as reactor pressure. Although high quality films were obtained without using any additional source of nitrogen such as ammonia, we have investigated the effect of ammonia on the growth and properties of the resulting films. The films obtained were characterized by XRD, RBS, XPS, AES, AFM, SEM and the room temperature PL spectroscopy of GaN films grown exhibited the correct near band edge luminescence at 3.45 eV.

Studies on SiBN(C)-ceramics: Oxidation- and Crystallization Behavior Lead the Way to Applications

1994 ◽  
Vol 346 ◽  
Author(s):  
H.-P. Baldus ◽  
G. Passing
Keyword(s):  
Crystallization Behavior ◽  
Bulk Material ◽  
Single Source ◽  
Single Source Precursor ◽  
High Oxidation ◽  
C And N ◽  
High Oxidation Resistance ◽  
Kinetics Of ◽  
Very High ◽  
Thermal Stability Of

ABSTRACTThe thermal stability of amorphous borosilicon nitride (Si3B3N7) and borosilicon carbonitride (SiBN3C) between 1000°C and 2000oC both in air and under inert conditions is reported. Both materials are derived from polymerization and subsequent pyrolysis of a “single source” precursor. On heating in vacuum or nitrogen SiBN3C remains amorphous up to lCWC whereas Si3B3N7 crystallizes at about 1800°C under these conditions. At about 2000^ the SiBN(C)-materials decompose into SiC, BN, B4C and N2.Oxidation studies performed by TEM- and SEM-investigations of oxidized borosilicon carbonitride grains reveal that an interlayer consisting of B, N, and only little O is formed between the oxide scale on the surface and the inner bulk material. The interlayer does not disappear at temperatures above 1450°C in contrast to the Si2N20-interiayer observed on oxidized silicon nitride. The oxidation kinetics of the new ceramics are established in the range from 1000°C to 1600°C indicating a very high oxidation resistance. Possible applications as matrix materials as well as materials for fibers and coatings are discussed.

scholarly journals Capture the growth kinetics of CVD growth of two-dimensional MoS2

2017 ◽  
Vol 1 (1) ◽  
Author(s):  
Dancheng Zhu ◽  
Haibo Shu ◽  
Feng Jiang ◽  
Danhui Lv ◽  
Vijayshankar Asokan ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Two Dimensional ◽  
Cvd Growth ◽  
Kinetics Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Growth of InN whiskers from single source precursor

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-577-Pr3-584 ◽  
Author(s):  
A. Devi ◽  
H. Parala ◽  
W. Rogge ◽  
A. Wohlfart ◽  
A. Birkner ◽  
...  
Keyword(s):  
Single Source ◽  
Single Source Precursor

Growth Kinetics of Quantum Size ZnO Particles

1998 ◽  
Vol 536 ◽  
Author(s):  
E. M. Wong ◽  
J. E. Bonevich ◽  
P. C. Searson
Keyword(s):  
Growth Kinetics ◽  
Ostwald Ripening ◽  
Chemical Potential ◽  
Colloidal Suspensions ◽  
Green Emission ◽  
Blue Shift ◽  
Constant Current ◽  
Mass Model ◽  
Zno Particles ◽  
Kinetics Of

AbstractColloidal chemistry techniques were used to synthesize ZnO particles in the nanometer size regime. The particle aging kinetics were determined by monitoring the optical band edge absorption and using the effective mass model to approximate the particle size as a function of time. We show that the growth kinetics of the ZnO particles follow the Lifshitz, Slyozov, Wagner theory for Ostwald ripening. In this model, the higher curvature and hence chemical potential of smaller particles provides a driving force for dissolution. The larger particles continue to grow by diffusion limited transport of species dissolved in solution. Thin films were fabricated by constant current electrophoretic deposition (EPD) of the ZnO quantum particles from these colloidal suspensions. All the films exhibited a blue shift relative to the characteristic green emission associated with bulk ZnO. The optical characteristics of the particles in the colloidal suspensions were found to translate to the films.

Growth kinetics of boride layers formed on GGG 40.3 ductile iron

2016 ◽  
Vol 58 (5) ◽  
pp. 418-421
Author(s):  
Fatma Ünal ◽  
Ahmet Topuz
Keyword(s):  
Growth Kinetics ◽  
Ductile Iron ◽  
Kinetics Of

scholarly journals Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18493-18499
Author(s):  
Sergio Sánchez-Martín ◽  
S. M. Olaizola ◽  
E. Castaño ◽  
E. Urionabarrenetxea ◽  
G. G. Mandayo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Analysis ◽  
Deposition Parameters ◽  
Kinetics Of

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).

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