Hrxrd Study of the Strain Properties of MBE-Grown ZnSe and ZnSTe on GaAs

1994 ◽  
Vol 340 ◽  
Author(s):  
I.K. Sou ◽  
S.M. Mou ◽  
Y.W. Chan ◽  
G.C. Xu ◽  
G.K.L. Wong
Keyword(s):  
Layer Thickness ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Dynamical Theory ◽  
X Ray Diffraction ◽  
Strained Layers ◽  
X Ray ◽  
Znse Layer ◽  
Vegard’S Law ◽  
First Time

ABSTRACTWe have studied the structural properties of MBE-grown ZnSe/GaAs and ZnSTe/GaAs heterostructures using high resolution X-ray diffraction (HRXRD). The transition from pseudomorphic to partially and then fully relaxed strained layers is observed as a function of ZnSe layer thickness. The critical thickness for the on-set of strained relaxation for ZnSe on GaAs(001) is determined to be between 1600 and 1850 Å. Using a simulation program based on the dynamical theory, the poisson's ratio of ZnSe is accurately determined to be v=0.380±0.002. A set of ZnSl-xTex epilayers with 0 ≤ × ≤ 1 was grown on GaAs by MBE for the first time. A linear dependence of the lattice constant upon Te composition is found, which agrees well with the Vegard's Law. The characteristic behaviors of inclination between the layer and substrate planes as a function of layer thickness has been studied on both ZnSe/GaAs and ZnSTe/GaAs systems. The atomic planes of both ZnSe and ZnSTe layers are observed to tilt from those of the GaAs substrate.

Tetragonal Strain in MBE GexSi1-x Films Grown on (100) Si Observed by Ion Channeling and X-Ray Diffraction

1983 ◽  
Vol 25 ◽  
Author(s):  
A. T. Fiory ◽  
L. C. Feldman ◽  
J. C. Bean ◽  
I. K. Robinson
Keyword(s):  
Molecular Beam ◽  
Critical Thickness ◽  
Ion Beam ◽  
Growth Surface ◽  
X Ray Diffraction ◽  
Strained Layers ◽  
X Ray ◽  
Ion Channeling ◽  
Pseudomorphic Growth ◽  
Beam Damage

ABSTRACTStructure of GexSi1-x alloy films grown on (100) Si by molecular beam epitaxy is analyzed by MeV He+ ion channeling and X-ray diffraction as functions of Ge concentration, film thickness and growth temperature. Critical thicknesses for pseudomorphic growth are determined for x ≤ 0.5, where coherent tetragonally-strained layers are observed. The average strain decreases approximately as the square-root of thickness when the critical thickness is exceeded. At temperatures near the threshold for islanding growth, surface roughness appears as a precursor to degradation of strained-layer epitaxy. No effect on the amount of the tetragonal strain was found in a study of ion-beam damage.

High-Resolution X-Ray Characterization of Amorphous Semiconductor Multilayers

1989 ◽  
Vol 149 ◽  
Author(s):  
P. D. Persans ◽  
A. F. Ruppert ◽  
B. Abeles ◽  
G. Hughes ◽  
K. S. Liang
Keyword(s):  
Surface Roughness ◽  
High Resolution ◽  
Layer Thickness ◽  
Dynamical Theory ◽  
Amorphous Semiconductor ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTWe discuss high-resolution x-ray diffraction measurements on a-Si:H/a-Ge:H periodic amorphous multilayers. Analysis of the data using the dynamical theory yields information on layer thicknesses and densities, interface and surface roughness, and structural defects such as layer thickness fluctuations.

X-Ray Diffraction Determination of Critical Thickness of InAs and InP on GaAs Grown by Atomic Layer Molecular Beam Epitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
A. Mazuelas ◽  
L. Gonzalez ◽  
L. Tapfer ◽  
F. Briones
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Critical Thickness ◽  
Atomic Layer ◽  
Dynamical Theory ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strained Layer ◽  
Diffraction Determination ◽  
Cap Layer

ABSTRACTTwo series of samples consisting in a strained layer of InAs (InP) of different thickness, InAs N monolayers (ML) with N=1,2,3, and 4, and, InP M ML with M=2,3,4,5,6 and 7, covered by a GaAs cap layer of 200 nm were grown by Atomic Layer Molecular Beam Epitaxy (ALMBE).The samples have been characterized by X-ray diffraction in order to measure the critical thickness of InAs and InP on GaAs.Computer simulation using dynamical theory of X-ray diffraction is used to fit the experimental patterns. In this way we determine the composition, thickness, and strain both in the strained layer of InAs or InP and in the cap layer of GaAs.A disagreement between simulated and experimental curves is reached at a thickness where the beginning of relaxation takes place (i.e. critical thickness). We have found that the critical thickness of InAs on GaAs(001) is 2.3 ML (0.75 nm) and the critical thickness of InP on GaAs(001) is 5.6–5.7 ML (1.71-1.74 nm), both grown by ALMBE.

InGaAs/GaAs Quantum Well Structures Grown by Migration-Enhanced Epitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
J.E. Wu ◽  
H.M. Yoo ◽  
T.G. Stoebe
Keyword(s):  
Growth Rate ◽  
Quantum Well ◽  
Critical Thickness ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Strained Layers ◽  
Quantum Well Structures ◽  
X Ray ◽  
Migration Enhanced Epitaxy ◽  
And Migration

ABSTRACTGaAs/In.2Ga.8As/GaAs quantum well structures containing InGaAs layers of thickness over and under the critical thickness (hc) were studied, as grown by both conventional molecular beam epitaxy (C-MBE) and migration-enhanced epitaxy (MEE) techniques. A 6.0 monolayer per cycle (ML/cyc) growth rate, in contrast to a one or less-than-one ML/cyc growth rate used in a conventional MEE process, was used to grow In.2Ga.8As layers over hc. As-grown samples were characterized via photoluminescence, X-ray diffraction, and transmission electron microscopy (TEM). The 6.0 ML/cyc MEE-grown layers over hc show superior optical quality to MBE-grown layers with the same thickness. Both X-ray diffraction and TEM microstructure results indicate that the 6.0 ML/cyc MEE-grown In.2Ga.8As layers are still strained layers while those grown by conventional MBE method are not. The 6.0 ML/cyc MEE process seems to be advantageous for growing InGaAs layers over the critical thickness.

Characterisation of Thin Lattice Mismatched Heteroepitaxial Layers by XRD

1991 ◽  
Vol 240 ◽  
Author(s):  
Mary A. G. Halliwell
Keyword(s):  
Layer Thickness ◽  
Critical Thickness ◽  
Growth Conditions ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Small Factor ◽  
Highly Strained ◽  
Heteroepitaxial Layers

ABSTRACTMany advanced III - V devices require highly strained heteroepitaxial layers less than 25 nm in thickness, with tight specifications on both the layer thickness and composition. In many cases the layers required are close to the critical thickness.The growth conditions for these thin layers are often extrapolated from established conditions for thicker layers. This method can result in layers which have the incorrect thickness and composition because of the transients which occur as growth commences. To minimise this problem it is desirable to establish growth conditions for layers which are as close to device requirements as possible. X-ray diffraction is capable of measuring layer thicknesses and compositions non-destructively. The minimum measurable layer thickness is usually within a small factor (typically 0.5 to 5 times) of device requirements.A single x-ray rocking curve is required to determine the thickness and composition of an unrelaxed (strained) layer. At least two rocking curves are required when relaxation is present. This paper discusses the appropriate choice of measurement conditions for a given sample.

A study on the limit of application of kinematical theory of X-ray diffraction

2020 ◽  
Vol 235 (11) ◽  
pp. 523-531
Author(s):  
Diego Felix Dias ◽  
José Marcos Sasaki
Keyword(s):  
Critical Thickness ◽  
Dynamical Theory ◽  
Perfect Crystal ◽  
Bragg Angle ◽  
Crystal Thickness ◽  
X Ray Diffraction ◽  
Linear Absorption ◽  
X Ray ◽  
Integrated Intensities ◽  
Kinematical Theory

AbstractIn this work, the limit of application of the kinematical theory of X-ray diffraction was calculate integrated intensities was evaluated as a function of perfect crystal thickness, when compared with the Ewald–Laue dynamical theory. The percentual difference between the dynamical and kinematical integrated intensities was calculated as a function of unit cell volume, Bragg angle, wavelength, module, and phase of structure factor and linear absorption coefficient. A critical thickness was defined to be the value for which the intensities differ 5%. We show that this critical thickness is 13.7% of the extinction length, which a specific combination of the parameters mentioned before. Also, we find a general expression, for any percentage of the difference between both theories, to determine the validity of the application of the kinematical theory. Finally, we also showed that the linear absorption decreases this critical thickness.

Interfacial properties of GaSb/InAs superlattices

1993 ◽  
Vol 51 ◽  
pp. 826-827
Author(s):  
M. E. Twigg ◽  
B. R. Bennett ◽  
J. R. Waterman ◽  
J. L. Davis ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Molecular Beam ◽  
Infrared Detector ◽  
Interfacial Properties ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Absorption Coefficients ◽  
X Ray ◽  
Short Period ◽  
High Optical Absorption

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.

scholarly journals Quartz Crystallite Size and Moganite Content as Indicators of the Mineralogical Maturity of the Carboniferous Chert: The Case of Cherts from Eastern Asturias (Spain)

Minerals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 611
Author(s):  
Celia Marcos ◽  
María de Uribe-Zorita ◽  
Pedro Álvarez-Lloret ◽  
Alaa Adawy ◽  
Patricia Fernández ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystallite Size ◽  
Archaeological Sites ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Infrared And Raman Spectroscopy ◽  
First Time ◽  
Geological Formations

Chert samples from different coastal and inland outcrops in the Eastern Asturias (Spain) were mineralogically investigated for the first time for archaeological purposes. X-ray diffraction, X-ray fluorescence, transmission electron microscopy, infrared and Raman spectroscopy and total organic carbon techniques were used. The low content of moganite, since its detection by X-ray diffraction is practically imperceptible, and the crystallite size (over 1000 Å) of the quartz in these cherts would be indicative of its maturity and could potentially be used for dating chert-tools recovered from archaeological sites. Also, this information can constitute essential data to differentiate the cherts and compare them with those used in archaeological tools. However, neither composition nor crystallite size would allow distinguishing between coastal and inland chert outcrops belonging to the same geological formations.

scholarly journals First Report on the Geologic Occurrence of Natural Na–A Zeolite and Associated Minerals in Cretaceous Mudstones of the Paja Formation of Vélez (Santander), Colombia

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 218
Author(s):  
Carlos Alberto Ríos-Reyes ◽  
German Alfonso Reyes-Mendoza ◽  
José Antonio Henao-Martínez ◽  
Craig Williams ◽  
Alan Dyer
Keyword(s):  
Natural Zeolite ◽  
Scanning Electron Micrographs ◽  
Total Sulfur ◽  
Zeolite A ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mineral Phases ◽  
The World ◽  
Porosity And Permeability ◽  
First Time

This study reports for the first time the geologic occurrence of natural zeolite A and associated minerals in mudstones from the Cretaceous Paja Formation in the urban area of the municipality of Vélez (Santander), Colombia. These rocks are mainly composed of quartz, muscovite, pyrophyllite, kaolinite and chlorite group minerals, framboidal and cubic pyrite, as well as marcasite, with minor feldspar, sulphates, and phosphates. Total organic carbon (TOC), total sulfur (TS), and millimeter fragments of algae are high, whereas few centimeters and not biodiverse small ammonite fossils, and other allochemical components are subordinated. Na–A zeolite and associated mineral phases as sodalite occur just beside the interparticle micropores (honeycomb from framboidal, cube molds, and amorphous cavities). It is facilitated by petrophysical properties alterations, due to processes of high diagenesis, temperatures up to 80–100 °C, with weathering contributions, which increase the porosity and permeability, as well as the transmissivity (fluid flow), allowing the geochemistry remobilization and/or recrystallization of pre-existing silica, muscovite, kaolinite minerals group, salts, carbonates, oxides and peroxides. X-ray diffraction analyses reveal the mineral composition of the mudstones and scanning electron micrographs show the typical cubic morphology of Na–A zeolite of approximately 0.45 mμ in particle size. Our data show that the sequence of the transformation of phases is: Poorly crystalline aluminosilicate → sodalite → Na–A zeolite. A literature review shows that this is an unusual example of the occurrence of natural zeolites in sedimentary marine rocks recognized around the world.

scholarly journals The Effect of Surfactant-Modified Montmorillonite on the Cross-Linking Efficiency of Polysiloxanes

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2623
Author(s):  
Monika Wójcik-Bania ◽  
Jakub Matusik
Keyword(s):  
Total Pore Volume ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
The Cross ◽  
Chain Lengths ◽  
First Time ◽  
Substituent Influence ◽  
Benzyl Substituent

Polymer–clay mineral composites are an important class of materials with various applications in the industry. Despite interesting properties of polysiloxanes, such matrices were rarely used in combination with clay minerals. Thus, for the first time, a systematic study was designed to investigate the cross-linking efficiency of polysiloxane networks in the presence of 2 wt % of organo-montmorillonite. Montmorillonite (Mt) was intercalated with six quaternary ammonium salts of the cation structure [(CH3)2R’NR]+, where R = C12, C14, C16, and R’ = methyl or benzyl substituent. The intercalation efficiency was examined by X-ray diffraction, CHN elemental analysis, and Fourier transform infrared (FTIR) spectroscopy. Textural studies have shown that the application of freezing in liquid nitrogen and freeze-drying after the intercalation increases the specific surface area and the total pore volume of organo-Mt. The polymer matrix was a poly(methylhydrosiloxane) cross-linked with two linear vinylsiloxanes of different siloxane chain lengths between end functional groups. X-ray diffraction and transmission electron microscopy studies have shown that the increase in d-spacing of organo-Mt and the benzyl substituent influence the degree of nanofillers’ exfoliation in the nanocomposites. The increase in the degree of organo-Mt exfoliation reduces the efficiency of hydrosilylation reaction monitored by FTIR. This was due to physical hindrance induced by exfoliated Mt particles.

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