Liquid Phase Epitaxial Growth and Characterization of GaAs on InP Substrates

1994 ◽  
Vol 340 ◽  
Author(s):  
Dong-Keun Kim ◽  
Hyung-Jong Lee ◽  
Byung-Teak Lee
Keyword(s):  
Liquid Phase ◽  
Surface Morphology ◽  
Growth Conditions ◽  
Gaas Layer ◽  
Misfit Dislocations ◽  
Double Crystal ◽  
Transmission Electron ◽  
Grating Region ◽  
Inp Substrates ◽  
Undoped Gaas

ABSTRACTOptimum growth conditions were investigated to obtain high quality heteroepitaxial GaAs layers on InP substrates by liquid phase epitaxy (LPE). Addition of about 0.005wt% of Se to the Ga growth melt effectively suppressed dissolution of the InP substrates into the melt during the initial stage of the growth, resulting in a significantly improved surface morphology. The crystallinity and the surface morphology could be further improved by growing undoped GaAs layers on thin Se-doped buffer GaAs as well as using InP substrates patterned with grating structure. The transmission electron microscopy observation indicated that the misfit dislocations interact with each other at the grating region, resulting in a lower dislocation density in the upper GaAs layer. The (400) double crystal X-ray diffraction peaks of the undoped GaAs showed fullwidth- at-half-maximum of about 380 arcsec, which is comparable with the previously reported values using more sophisticated growth techniques.

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

Microstructural study of GaAs epitaxial layers on Ge(100) substrates

1995 ◽  
Vol 10 (4) ◽  
pp. 843-852 ◽  
Author(s):  
N. Guelton ◽  
R.G. Saint-Jacques ◽  
G. Lalande ◽  
J-P. Dodelet
Keyword(s):  
Electron Microscopy ◽  
Surface Preparation ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Antiphase Boundaries ◽  
Microstructural Study ◽  
Mismatch Strain ◽  
Transmission Electron

GaAs layers grown by close-spaced vapor transport on (100) Ge substrates have been investigated as a function of the experimental growth conditions. The effects on the microstructure of the surface preparation, substrate misorientation, and annealing were studied using optical microscopy and transmission electron microscopy. Microtwins and threading dislocations are suppressed by oxide desorption before deposition. Single domain GaAs layers have been obtained using a 50 nm thick double domain buffer layer on an annealed Ge substrate misoriented 3°toward [011]. The mismatch strain is mainly accommodated by dissociated 60°dislocations. These misfit dislocations extend along the interface by the glide of the threading dislocations inherited from the substrate, but strong interaction with antiphase boundaries (APB's) prevents them from reaching the interface. These results are discussed and compared with previous reports of GaAs growth on Ge(100).

MBE Growth of Low Dislocation and High Mobility GaAs-on-Si

1986 ◽  
Vol 67 ◽  
Author(s):  
Jhang Woo Lee
Keyword(s):  
Layer Structure ◽  
High Mobility ◽  
Gaas Layer ◽  
Buffer Layers ◽  
Misfit Dislocations ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Transmission Electron ◽  
Low Dislocation Density ◽  
Molecular Beam Epitaxial Growth

ABSTRACTData is presented on the optimization of several molecular beam epitaxial growth processes to provide low dislocation density and high mobility GaAs single crystals on (100) Si wafers. The substrate tilt angle, the growth temperature, and the first buffer layer structure, were investigated Tor this purpose. Using Hall measurements the GaAs layers grown on 2 or 3-degree tilt (100) Si showed consistently high mobilities which are equivalent to the homoepitaxial GaAs mobility. Transmission electron microscopy (TEM) revealed that on tilted (100) Si substrates most of the misfit dislocations were confined within the first 50 Å GaAs layer by forming a type of edge dislocation at the Si surface step edges. Also low temperature grown buffer layers always gave better morphologies and lower etch pit densities while keeping the high mobilities on overgrown GaAs layers.

Evaluation of the Interface Structure During Stranski-Krastanov Growth of GE(SI) on Si (001)

1991 ◽  
Vol 238 ◽  
Author(s):  
M. Albrecht ◽  
H. P. Strunk ◽  
P. O. Hansson ◽  
E. Bauser
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Interface Structure ◽  
Misfit Dislocations ◽  
Heteroepitaxial Growth ◽  
Dislocation Glide ◽  
Transmission Electron ◽  
Half Loop

ABSTRACTThe initial stages of heteroepitaxial growth of Ge0.85 Si0.15 on Si(001) grown from Bi solution (liquid phase epitaxy) are studid by transmission electron microscopy. Stranski-Krastanov growth is observed to take place. After growth of a pseudomorphic Ge0.85 Si0.15 layer of 4 monolayer thickness, islands form and grow pseudomorphically up to a thickness of 30 nm. Then first misfit dislocations form. The formation process of these dislocations is analyzed and discussed in terms of half loop nucleation at the surface and dislocation glide. Evidence for glide on (110) planes is put forward.

Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 43-49 ◽  
Author(s):  
Peter Zaumseil ◽  
Yuji Yamamoto ◽  
Joachim Bauer ◽  
Markus Andreas Schubert ◽  
Jana Matejova ◽  
...  
Keyword(s):  
Oxide Thickness ◽  
Growth Conditions ◽  
Structural Defects ◽  
Misfit Dislocations ◽  
Strain Partitioning ◽  
X Ray Diffraction ◽  
Reduced Pressure ◽  
Periodic Arrays ◽  
Transmission Electron

Selective epitaxial growth of germanium (Ge) on nano-structured Si(001) wafers is studied to evaluate the applicability of the nano-heteroepitaxy (NHE) approach on Ge-Si system. Based on a gate spacer technology established in advanced silicon microelectronics periodic arrays of nano-scaled Si islands are prepared, where Ge is deposited on top by reduced pressure CVD. The spacing of these structures is 360 nm. The structural perfection of the deposited Ge is investigated by transmission electron microscopy and X-ray diffraction. It is found that SiO2used as masking material is responsible for the suppression of the desired strain partitioning effect according to NHE. Even for 10 nm oxide thickness, the lattice of Ge layers deposited on Si nano-islands relaxes completely by generation of misfit dislocations at the interface. The occurrence of additional structural defects like stacking faults and micro twins can be controlled by suited growth conditions.

MOCVD Growth and Characterization of High-Quality ZnSe on GaAs

1994 ◽  
Vol 340 ◽  
Author(s):  
J. C. Chen ◽  
Bing Yang ◽  
F. Semendy ◽  
W. W. Clark ◽  
P. R. Boyd ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Defect Density ◽  
Growth Conditions ◽  
Misfit Dislocations ◽  
High Quality ◽  
Double Crystal ◽  
X Ray ◽  
Mocvd Growth ◽  
Order Of Magnitude

ABSTRACTHigh-quality ZnSe epilayers on GaAs substrates have been grown by MOCVD. Diethylzinc (DEZn) and diethylselenide (DESe) were used as source materials. Growth studies were done at 400°C under different growth conditions in an atmospheric pressure MOCVD reactor. The as-grown ZnSe epilayers were characterized by a wide variety of techniques, such as double crystal x-ray diffraction, low-temperature photoluminescence (PL), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS), and scanning electron microscopy (SEM).The results show excellent structural and optical properties of ZnSe. The best material was grown on undoped GaAs at the VI/II ratio near unity. The full-width-at-half-maximum (FWHM) of ZnSe (∼0.2/μm thick) x-ray peak as low as 90 arc seconds was achieved. TEM results also show very low defect density. The density of stacking faults is less than 105/cm2 which is four orders of magnitude less than that of samples grown by conventional MBE [J. Petruzzello et al. J. Appl. Phys. 63, 2299 (1988)] and MOCVD [J.L. Batstone et al. Philos. Mag A, 66, 609, 1992]. The spacing between misfit dislocations is between 5 to 10,μm which is one order of magnitude larger than that of reported sample of comparable thickness.

Microstructural and Electrical Characterization of Misfit Dislocations at the InAs/GaP Heterointerface

1997 ◽  
Vol 500 ◽  
Author(s):  
V. Gopal ◽  
T. P. Chin ◽  
A. L. Vasiliev ◽  
J. M. Woodall ◽  
E. P. Kvam
Keyword(s):  
Misfit Dislocation ◽  
Lattice Mismatch ◽  
Electrical Characterization ◽  
Growth Conditions ◽  
Misfit Dislocations ◽  
Ir Detectors ◽  
Mbe Growth ◽  
Transmission Electron ◽  
Hall Effect Measurements ◽  
Edge Dislocations

ABSTRACTInAs is a narrow band gap semiconductor with potential for such applications as IR detectors, low temperature transistors, etc‥ However, the lack of suitable substrates has hampered progress in the development of InAs based devices. In the present study, InAs was grown by Molecular Beam Epitaxy on (001) GaP substrates. Though this system has a high lattice mismatch, (∼11%), certain MBE growth conditions result in 80% relaxed InAs layers on GaP with the mismatch accommodated predominantly by 90° pure edge dislocations. Misfit dislocation microstructures were studied using Transmission Electron Microscopy. Electrical characterization using lateral conductance and Hall effect measurements were also performed. Preliminary results indicate the possibility of misfit dislocation related conductivity. The possible correlation between interface structure and electrical properties is discussed.

Movpe Strip-Like Self-Organization of InAs Grown on InP Vicinal Surfaces

2000 ◽  
Vol 618 ◽  
Author(s):  
Laurent Auvray ◽  
Véronique Soulière ◽  
Hervé Dumont ◽  
Jacques Dazord ◽  
Yves Monteil ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Growth Parameters ◽  
Flux Ratio ◽  
Growth Conditions ◽  
Thin Layers ◽  
Vicinal Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nominal Thickness ◽  
Inp Substrates

ABSTRACTWe have investigated the influence of MOVPE growth parameters on the surface morphology of InAs nanostructures grown on 0.2° misoriented (001)InP substrates. Thin layers of nominal thickness of about 3 and 6 ML were deposited at 500°C with V/Ill flux ratios ranging from 50 to 240. The samples were cool down from 500 to 350°C during 6 minutes under either arsine or phophine atmosphere. The influence of this step has been found to greatly determine the surface morphology of the nanostructures observed by atomic force microscopy. Dots self-aligned along the steps and forming a non continuous strip, regularly spaced every 3-4 terraces have been obtained. The morphology of the strips can be varied with the growth conditions (V/III flux ratio). In this work, we will propose a mechanism for the formation of the strips observed during the cooling under phosphine atmosphere taking into account an As » P exchange.

Surface Morphology of SiGe Epitaxial Layers Grown on Uniquely Oriented Si Substrates

2000 ◽  
Vol 648 ◽  
Author(s):  
Morgan E. Ware ◽  
Robert J. Nemanich
Keyword(s):  
Surface Morphology ◽  
Lattice Mismatch ◽  
Morphological Structure ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Relationship Of

AbstractThe 4% lattice mismatch between Si and Ge creates strain in epitaxial layers of SiGe alloys on Si, and this strain can manifest itself in the morphological structure of the surface of the epitaxial layer. This study explores the relationship of the evolution of the surface morphology of SiGe layers grown on a range of Si surface orientations. We have grown thin, strained and thick, relaxed layers of Si0.7Ge0.3 by solid source molecular beam epitaxy on substrates with surface normals rotated from [001] towards [111] by angles of θ = (0, 2, 4, 10, 22) degrees. The surface morphology was investigated by atomic force microscopy, which showed considerable ordering of surface features on relaxed samples. These features evolve from hut-like structures at 0 degrees to large mesa-like structures separated by pits and crevices at 22 degrees. The organization of these features is also shown to vary with the substrate orientation. Each surface has characteristic directions along which features are aligned, and these directions vary continuously with the angle of rotation of the substrate. Transmission electron microscopy confirmed that misfit dislocations had formed along those same directions. The state of relaxation of each layer is quantified by Raman spectroscopy in order to make a direct correlation between residual strain and surface morphology.

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