Mechanical, Thermal and Flow Dynamics Issues in Compound Semiconductor MOCVD Reactor Design

1994 ◽  
Vol 340 ◽  
Author(s):  
A.I. Gurary ◽  
G.S. Tompa ◽  
K. Moy ◽  
P. Zawadzki
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Rotating Disk ◽  
Compound Semiconductor ◽  
Element Analysis ◽  
Long Wavelength ◽  
Mocvd Reactor ◽  
Reactor Geometry

ABSTRACTIn recent years Metalorganic Chemical Vapor Deposition (MOCVD) becomes a key epitaxial process for a variety of compound semiconductor devices such as: GaAs/AlGaAs lasers, HEMTs, LEDs, photocathodes, solar cells, and MESFETs; InP/InGaAsP long wavelength lasers and detectors; InP/InGaAs quantum wells and detectors, etc. Development of reliable, high throughput equipment is a major task in the implementation of MOCVD into cost-effective manufacturings. We have used Computational Fluid Dynamics (CFD) and Finite Element Analysis (FEA) software to model thermal, structural, and flow processes for the scaling of EMCORE vertical, high speed rotating disk reactor (RDR) to large dimensions (four 4″ wafers located on 12″ wafer carrier). Flow modeling was used to determine basic reactor geometry and the relation between process parameters such as total reactant flow, temperature, pressure, and rotation speed. Thermal and structural analysis was used to produce a uniform substrate temperature, avoid reactor overheating and decrease thermal stress. Flow and temperature distribution predicted by the modeling were found to be well correlated with experimental results.

Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor

MRS Advances ◽  
2017 ◽  
Vol 2 (5) ◽  
pp. 329-334 ◽  
Author(s):  
Jing Lu ◽  
Jie Su ◽  
Ronald Arif ◽  
George D. Papasouliotis ◽  
Ajit Paranjpe
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
High Electron Mobility Transistor ◽  
Xrd Analysis ◽  
Structural Quality ◽  
Organic Chemical ◽  
High Electron ◽  
Mocvd Reactor ◽  
Metal Organic

ABSTRACTInAlN films and InAlN/GaN high electron mobility transistor (HEMT) structures were demonstrated on 150mm <111> Si using Veeco’s Propel single wafer metal-organic chemical vapor deposition (MOCVD) system. Smooth surfaces with root mean square (rms) roughness of 0.68 nm were observed in a 5x5 μm2 atomic force microscope (AFM) scan. X-ray diffraction (XRD) analysis shows well-defined layer peaks and fringes, indicating good structural quality and abrupt layer interfaces. Thickness uniformity of InAlN is 0.87%, 1σ, for a 7-point XRD measurement across the 150 mm wafer. Secondary ion mass spectrometry (SIMS) analysis confirms the uniform indium depth profile and the presence of abrupt layer interfaces. Negligible Ga (< 100 ppm, atomic) incorporation was detected in the InAlN bulk film. Film sheet resistance of 230Ω/sq, charge of 2.1×1013/cm2, and mobility of 1270 cm2/V.s were measured on a prototypical InAlN/GaN HEMT structure comprising a 10 nm-thick, 17% indium, InAlN barrier.

Atomic Force High Frequency Phonons Non-volatile Dynamic Random-Access Memory Compatible with Sub-7nm ULSI CMOS Technology

MRS Advances ◽  
2019 ◽  
Vol 4 (48) ◽  
pp. 2577-2584
Author(s):  
James N. Pan
Keyword(s):  
Quantum Wells ◽  
High Frequency ◽  
Nonvolatile Memory ◽  
High Speed ◽  
Random Access ◽  
Cost Effective ◽  
Cmos Technology ◽  
Access Time ◽  
Cmos Process ◽  
Atomic Force

ABSTRACTThis paper reports a novel low power, fast nonvolatile memory utilizing high frequency phonons, atomic force dual quantum wells, ferromagnetism, coupled magnetic dipoles and random accessed magnetic devices. Very high-speed memories, such as SRAM and DRAM, are mostly volatile (data are lost when power is off). Nonvolatile memories, including FLASH and MRAM, are typically not as fast has DRAM or SRAM, and the voltages for WRITE/ERASE operations are relatively high. This paper describes a silicon nonvolatile memory that is compatible with advanced sub-7nm CMOS process. It consists of only one transistor (MOSFET) – small size, and more cost effective, compared with a 6-Transistor SRAM. There is no need to refresh, as required by DRAM. The access time can be less than 1ns – close to the speed level of relaxation time - much faster than traditional FLASH memories and comparable to volatile DRAM. The operating voltages for all memory functions can be as low as high speed CMOS.

Recent Progress in the Growth of Mid-ir Emitters by Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 484 ◽  
Author(s):  
R. M. Biefeld ◽  
A. A. Allerman ◽  
S. R. Kurtz ◽  
K. C. Baucom
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Recent Progress ◽  
Chemical Vapor ◽  
Active Regions ◽  
Rotating Disk ◽  
Organic Chemical ◽  
Type I ◽  
Multi Stage

AbstractWe report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) growth of mid-infrared lasers and using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained InAsSb active regions. These lasers have multi-stage, type I InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsSb is an electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in conventional horizontal reactors. A single stage, optically pumped laser yielded improved power (> 650 mW/facet) at 80 K and 3.8 μm. A multi-stage 3.8–3.9 μm laser structure operated up to T=170 K. At 80 K, peak power > 100 mW and a high slope-efficiency were observed in gain guided lasers.

In‐situ growth of yba2cu3o7‐x films by metal organic chemical vapor deposition using vertical, high‐speed rotating disk reactor.

1989 ◽  
Vol 169 ◽  
Author(s):  
D. W. Noh ◽  
B. Gallois ◽  
Y. Q. Li ◽  
C. Chern ◽  
B. Rear ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Organic Chemical ◽  
Axis Orientation ◽  
Rotating Disk Reactor ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractSuperconducting thin films of YBa2Cu307‐x were grown on MgO (100) and YSZ(IOO) substrates without post‐annealing by metal organic chemical vapor deposition using vertical, high‐speed (1100 rpm) rotating disk reactor. The source materials were Y(tmhd)3, Ba(tmhd)2, and Cu(tmhd)2, which were kept at 135 °C, 240 °C, and 120 °C respectively. The precursors were transported using nitrogen as the carrier gas and introduced separately into the cylindrical stainless steel reaction chamber, which was maintained at 60 torr. The oxygen partial pressure was 30 Torr. The substrates were heated resistively at 800°C. After growth, the films were cooled down at a rate of 5 °C/min under 1 atmospheric pressure of pure oxygen. The X‐ray diffraction pattern of the films showed primarily an orientation of c‐axis perpendicular to the substrates, with weak peaks of (hoo) corresponding to a‐axis orientation. Scanning Electron Microscopy of the films showed a well‐developed a‐axis and c‐axis plate‐like structure which appeared as rectangular micron‐sized features on the MgO surface. On the YSZ substrates a‐axis and c‐axis plate‐like projections were also observed, with the dense plate‐like c‐axis orientation dominant. Four probe resistance measurements showed Tc(R=0) at 91.8 K(△TC=2.2 K) and 85 K (△TC=7 K) on YSZ and MgO substrates respectively.

A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor

1988 ◽  
Vol 93 (1-4) ◽  
pp. 220-227 ◽  
Author(s):  
G.S. Tompa ◽  
M.A. McKee ◽  
C. Beckham ◽  
P.A. Zawadzki ◽  
J.M. Colabella ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Speed ◽  
Rotating Disk ◽  
Parametric Investigation ◽  
Mocvd Reactor

High-speed long-wavelength optical modulation in InGaAs/InAlAs multiple quantum wells

1985 ◽  
Vol 21 (21) ◽  
pp. 951 ◽  
Author(s):  
K. Wakita ◽  
Y. Kawamura ◽  
Y. Yoshikuni ◽  
H. Asahi ◽  
S. Uehara
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Multiple Quantum Wells ◽  
Optical Modulation ◽  
Multiple Quantum ◽  
Long Wavelength
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