Recent Progress in the Growth of Mid-ir Emitters by Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 484 ◽  
Author(s):  
R. M. Biefeld ◽  
A. A. Allerman ◽  
S. R. Kurtz ◽  
K. C. Baucom
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Recent Progress ◽  
Chemical Vapor ◽  
Active Regions ◽  
Rotating Disk ◽  
Organic Chemical ◽  
Type I ◽  
Multi Stage

AbstractWe report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) growth of mid-infrared lasers and using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained InAsSb active regions. These lasers have multi-stage, type I InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsSb is an electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in conventional horizontal reactors. A single stage, optically pumped laser yielded improved power (> 650 mW/facet) at 80 K and 3.8 μm. A multi-stage 3.8–3.9 μm laser structure operated up to T=170 K. At 80 K, peak power > 100 mW and a high slope-efficiency were observed in gain guided lasers.

In‐situ growth of yba2cu3o7‐x films by metal organic chemical vapor deposition using vertical, high‐speed rotating disk reactor.

1989 ◽  
Vol 169 ◽  
Author(s):  
D. W. Noh ◽  
B. Gallois ◽  
Y. Q. Li ◽  
C. Chern ◽  
B. Rear ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Organic Chemical ◽  
Axis Orientation ◽  
Rotating Disk Reactor ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractSuperconducting thin films of YBa2Cu307‐x were grown on MgO (100) and YSZ(IOO) substrates without post‐annealing by metal organic chemical vapor deposition using vertical, high‐speed (1100 rpm) rotating disk reactor. The source materials were Y(tmhd)3, Ba(tmhd)2, and Cu(tmhd)2, which were kept at 135 °C, 240 °C, and 120 °C respectively. The precursors were transported using nitrogen as the carrier gas and introduced separately into the cylindrical stainless steel reaction chamber, which was maintained at 60 torr. The oxygen partial pressure was 30 Torr. The substrates were heated resistively at 800°C. After growth, the films were cooled down at a rate of 5 °C/min under 1 atmospheric pressure of pure oxygen. The X‐ray diffraction pattern of the films showed primarily an orientation of c‐axis perpendicular to the substrates, with weak peaks of (hoo) corresponding to a‐axis orientation. Scanning Electron Microscopy of the films showed a well‐developed a‐axis and c‐axis plate‐like structure which appeared as rectangular micron‐sized features on the MgO surface. On the YSZ substrates a‐axis and c‐axis plate‐like projections were also observed, with the dense plate‐like c‐axis orientation dominant. Four probe resistance measurements showed Tc(R=0) at 91.8 K(△TC=2.2 K) and 85 K (△TC=7 K) on YSZ and MgO substrates respectively.

Rotating Disk Reactor-Low Pressure Metal Organic Chemical Vapor Deposition (Mocvd) of Optical Films

1999 ◽  
Vol 597 ◽  
Author(s):  
John McAleese ◽  
L. Gary Provost ◽  
Gary S. Tompa ◽  
Andrei Colibaba-Evulet ◽  
Nick G. Gulmac ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transparent Conducting Oxide ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Rotating Disk Reactor ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractOver the past 30 years, the need for transparent conducting oxide coatings has been met almost exclusively by tin doped indium-oxide. As the display market advances in complexity, the demand for alternative transparent materials exhibiting high conductivity and stability has become greater. In this paper, we discuss briefly the merits of using doped ZnO as a superior transparent conducting oxide. We report here our results in scaling our ZnO MOCVD reactor technology from 5° to 12° diameter susceptors. Using Rotating Disk Reactor-Low Pressure Metal Organic Chemical Vapor Deposition, we have been able to obtain large area uniformity on multiple (14 cm × 9 cm) glass sheets per deposition run. Promising film characteristics suggest significant application in the field of flat panel displays and other optical systems may be possible.

scholarly journals The Growth and Doping of Al(As)Sb by Metal-Organic Chemical Vapor Deposition

1996 ◽  
Vol 421 ◽  
Author(s):  
R. M. Biefeld ◽  
A. A. Allerman ◽  
S. R. Kurtz
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Active Regions ◽  
Epitaxial Films ◽  
Organic Chemical ◽  
Order Of Magnitude ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Cladding Layers

AbstractAlSb and AlAsxSb1−x epitaxial films grown by metal-organic chemical vapor deposition were successfully doped p- or n-type using diethylzinc or tetraethyltin, respectively. AlSb films were grown at 500°C and 76 torr using trimethylamine or ethyldimethylamine alane and triethylantimony. We examined the growth of AlAsSb using temperatures of 500 to 600 ° C, pressures of 65 to 630 torr, V/Ill ratios of 1–17, and growth rates of 0.3 to 2.7 μm/hour in a horizontal quartz reactor. SIMS showed C and 0 levels below 2 × 1018 cm−3 and 6×1018 cm−3 respectively for undoped AlSb. Similar levels of O were found in AlAs0.16Sb0.84 films but C levels were an order of magnitude less in undoped and Sn-doped AlAs0.16 Sb0.84 films. Hall measurements of AlAs0.16Sb0.84 showed hole concentrations between l×1017 cm−3 to 5×1018 cm−3 for Zn-doped material and electron concentrations in the low to mid 1018 cm−3 for Sndoped material. We have grown pseudomorphic InAs/InAsSb quantum well active regions on AlAsSb cladding layers. Photoluminescence of these layers has been observed up to 300 K.

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