Solid-State NMR Studies of the Bonding Structure of Diamondlike Amorphous Carbon Films

1994 ◽  
Vol 339 ◽  
Author(s):  
Susan M. Holl ◽  
Robert D. Johnson ◽  
Vlad. J. Novotny ◽  
Jeffrey L. Williams ◽  
Catherine E. Caley ◽  
...  

ABSTRACTAmorphous carbon films are (a-C:H) of interest because of their useful physical properties. They are extremely hard and chemically inert, resisting degradation by both acids and alkalis. They are insoluble and can be conformably coated onto virtually any substrate. These properties make the films ideal protective coatings on magnetic disks and tools. We have studied several thin (one to two micron) films prepared by plasma enhanced chemical vapor deposition with varying radiofrequency fields strengths to determine structural differences at the atomic level. Several properties of the films, such as hardness and wear rate, are dependent on deposition power. We have found that the sp2/sp3 ratio increases with increasing deposition power. Thus, films that are harder are more “graphitic” and less “diamondlike”. The films studied here contain 11–16 atomic percent hydrogen, most of which is associated with sp3 carbon sites. At least two distinct phases of hydrogens exist. Variable temperature studies reveal that, in contrast to amorphous hydrogenated silicon, proton linewidths in carbon films are temperature dependent, suggesting some molecular motion is present at room temperature.

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1096-1100 ◽  
Author(s):  
Y. HAYASHI ◽  
S. ISHIKAWA ◽  
T. SOGA ◽  
T. JIMBO ◽  
M. ADACHI ◽  
...  

We report on the efficient photoluminescence (PL) and optical properties of hydrogenated amorphous carbon thin films codoped with nitrogen and trimethylboron (TMB) grown by rf plasma-enhanced chemical vapor deposition at room temperature. The study clearly shows the observation of discrete PL emission peaks. The PL intensity of the film deposited with 20 sccm TMB is more than 103 times than that of the film deposited without TMB. The change of optical bandgap and PL emission energy with TMB flow rate are discussed based on sp3 and sp2 C networks. Angular dependence of the PL spectra revealed that the origin of multiple sharp peaks is due to Fabry-Perot cavity interference effect.


1995 ◽  
Vol 381 ◽  
Author(s):  
Kazuhiko Endo ◽  
Toru Tatsumi

AbstractFluorinated amorphous carbon films are proposed as low dielectric constant interlayer dielectrics for ULSI circuits. The films are deposited by plasma enhanced chemical vapor deposition with CH4, CF4 and C2F6 in a parallel-plate rf (13.56 MHz) reactor and a helicon wave reactor. In a parallel-plate reactor, the dielectric constant of the amorphous carbon films deposited with CH4 increases with increase in rf power. Addition of CF4 to CH4 reduces the dielectric constant to 2.1 and raises the deposition rate. However etching reaction occurs with high CF4/CH4 ratios. No film grows with only CF4. XPS measurement reveals that the F atoms are introduced into the amorphous carbon films. Helicon reactor has higher plasma density and is expected to achieve higher deposition rate for productive use. In this reactor, fluorinated amorphous carbon films without hydrogen content can be obtained with only CF4 and C2F6 gases. The growth rate of the films reaches 0.3 μ/min with C2F6 and 0.15 μ/min with CF4 at a source power of 2 kW and a gas flow rate of 100 sccm. With heating up to 300°C in a vacuum for 1 hour, the thickness of the films deposited with C2F6 does not shrink while that of films with CF4 shrinks.


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