Adhesion Measurements of Thin Films by Several Methods

1994 ◽  
Vol 338 ◽  
Author(s):  
Akira Kinbara ◽  
Tatsuya Banno ◽  
Ichiharu Kondo ◽  
Osamu Takenaka
Keyword(s):  
Thin Films ◽  
Ion Bombardment ◽  
Measuring Method ◽  
Interface Structure ◽  
Solid Substrates ◽  
Novel Method ◽  
Conventional Methods

ABSTRACTAdhesion of thin films to solid substrates has been measured by various methods. In addition to the traditional and the conventional methods, a novel method has been proposed. The adhesion is expressed by various units depending on the measuring method. Obtained values by typical or well known methods such as scratch, peel and pull method are expressed in terms of N, N/m and N/m2, respectively. Relation among these quantities was discussed. The interface structure between the films and the substrates was investigated by TEM, ED, EDS, etc. and was related to the adhesion. Particular attention was paid to the ion bombardment effect of the substrate on the adhesion.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

A Novel Multiple Interface Structure with the Segregation of Dopants in Lead-Free Ferroelectric (K0.5 Na0.5 )NbO3 Thin Films

2017 ◽  
Vol 5 (2) ◽  
pp. 1700972 ◽  
Author(s):  
Chao Li ◽  
Lingyan Wang ◽  
Wen Chen ◽  
Lu Lu ◽  
Hu Nan ◽  
...  
Keyword(s):  
Thin Films ◽  
Interface Structure ◽  
Lead Free ◽  
Multiple Interface

Improvement of the Seebeck coefficient of PEDOT:PSS by chemical reduction combined with a novel method for its transfer using free-standing thin films

2014 ◽  
Vol 2 (7) ◽  
pp. 1278-1283 ◽  
Author(s):  
Nicolas Massonnet ◽  
Alexandre Carella ◽  
Olivier Jaudouin ◽  
Patrice Rannou ◽  
Gautier Laval ◽  
...  
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Chemical Reduction ◽  
Free Standing ◽  
Novel Method
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