Improvement of the Seebeck coefficient of PEDOT:PSS by chemical reduction combined with a novel method for its transfer using free-standing thin films

2014 ◽  
Vol 2 (7) ◽  
pp. 1278-1283 ◽  
Author(s):  
Nicolas Massonnet ◽  
Alexandre Carella ◽  
Olivier Jaudouin ◽  
Patrice Rannou ◽  
Gautier Laval ◽  
...  
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Chemical Reduction ◽  
Free Standing ◽  
Novel Method

Polarization-dependence of the Raman response of free-standing strained Ce0.8Gd0.2O2 membranes

2021 ◽  
Author(s):  
Alexander Konetschny ◽  
Marcel Weinhold ◽  
Christian Heiliger ◽  
Matthias Thomas Elm ◽  
Peter J. Klar
Keyword(s):  
Thin Films ◽  
Strain State ◽  
Polarization Dependence ◽  
Raman Mapping ◽  
Free Standing ◽  
Excitation Light ◽  
Oriented Polycrystalline ◽  
Raman Response

Square-shaped Ce0.8Gd0.2O2 (GDC) membranes are prepared by microstructuring techniques from (111)-oriented, polycrystalline GDC thin films. The strain state of the membranes is investigated by micro-Raman mapping using polarized excitation light....

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

MeV Ion-Beam Bombardment Effects on The Thermoelectric Figures of Merit of Zn4Sb3 and ZrNiSn-Based half-heusler compounds

2007 ◽  
Vol 1020 ◽  
Author(s):  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
C. C. Smith ◽  
B. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Measurement System ◽  
Ion Beam ◽  
Electrical Energy ◽  
Figures Of Merit ◽  
Material Systems ◽  
The Cross ◽  
Conductivity Of Thin Films

AbstractSemiconducting â-Zn4Sb3and ZrNiSn-based half-heusler compound thin films were prepared by co-evaporation for the application of thermoelectric (TE) materials. High-purity solid zinc and antimony were evaporated by electron beam to grow the â-Zn4Sb3thin film while high-purity zirconium powder and nickel tin powders were evaporated by electron beam to grow the ZrNiSn-based half-heusler compound thin film. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of the thin films. The grown thin films were subjected to 5 MeV Si ions bombardments for generation of nanostructures in the films. We measured the thermal conductivity, Seebeck coefficient, and electrical conductivity of these two systems before and after 5 MeV Si ions beam bombardments. The two material systems have been identified as promising TE materials for the application of thermal-to-electrical energy conversion, but the efficiency still limits their applications. The electronic energy deposited due to ionization in the track of MeV ion beam can cause localized crystallization. The nanostructures produced by MeV ion beam can cause significant change in both the electrical and the thermal conductivity of thin films, thereby improving the efficiency. We used the 3ù-method measurement system to measure the cross-plane thermal conductivity ,the Van der Pauw measurement system to measure the cross-plane electrical conductivity, and the Seebeck-coefficient measurement system to measure the cross-plane Seebeck coefficient. The thermoelectric figures of merit of the two material systems were then derived by calculations using the measurement results. The MeV ion-beam bombardment was found to decrease the thermal conductivity of thin films and increase the efficiency of thermal-to-electrical energy conversion.

Synthesis and Fabrication of PVA-Ag-Cu and PANI-Ag-Cu Nanocomposite Thin Film Sensor for Detection of E. coli in Water

2014 ◽  
Vol 911 ◽  
pp. 131-135 ◽  
Author(s):  
H. Abdullah ◽  
Noor Azwen Noor Azmy ◽  
Norshafadzila Mohammad Naim ◽  
Aisyah Bolhan ◽  
Aidil Abdul Hamid ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Reduction ◽  
Oxidative Polymerization ◽  
Face Centered Cubic ◽  
High Concentration ◽  
Film Sensor ◽  
E Coli ◽  
Host Materials ◽  
Face Centered ◽  
Xrd Patterns

Polymers are excellent host materials for nanoparticles of metals and semiconductors. PVAAgCu nanocomposite was synthesized from chemical reduction, whereas PANIAgCu nanocomposite was synthesized by chemical oxidative polymerization. PVAAgCu and PANIAgCu thin films were deposited on the glass substrate by spin coating technique. The films were characterized by using XRD and AFM. The sensitivity of the samples was analyzed by IV measurement. The peaks in XRD patterns confirm the presence of Ag-Cu nanoparticles in face centered cubic structure. AFM images show the roughness of PVAAgCu and PANIAgCu increased as Ag concentration decreased and Cu concentration increased. I-V measurements indicate that the change in the current of the films increases with the presence of E. coli. The sensitivity on E. coli increases for PVAAgCu and PANIAgCu thin films with high concentration of Cu.

Entail the new path for permanent magnets: Free-standing Hf-Co thin films

2016 ◽  
Vol 681 ◽  
pp. 589-594 ◽  
Author(s):  
G. Durak Yüzüak ◽  
E. Yüzüak ◽  
Y. Elerman
Keyword(s):  
Thin Films ◽  
Permanent Magnets ◽  
Free Standing
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