Effect of Phosphorus-Doped Polysilicon Anneal on Thin Oxide Reliability as Probed with X-Ray Damage Characterization

1994 ◽  
Vol 338 ◽  
Author(s):  
R. Nachman ◽  
F. Cerrina
Keyword(s):  
Gate Oxide ◽  
Radiation Sensitivity ◽  
Oxide Charge ◽  
X Ray ◽  
Damage Characterization ◽  
Oxide Reliability ◽  
The Creation ◽  
Thin Oxide ◽  
Phosphorus Doped ◽  
Mos Structures

ABSTRACTIn this paper we address the degradation of oxide reliability after annealing the phosphorusdoped polysilicon of MOS structures. The oxide reliability was studied in terms of X-ray radiation sensitivity as well as breakdown characteristics.We found that annealing the polysilicon increased the radiation sensitivity of the gate oxide. We believe that this increase is a result of the phosphorus out-diffusion from the polysilicon into the oxide and a result of the creation of phosphorus related traps in the oxide bulk. We also found that the oxide charge to breakdown (Qbd) degradation correlates well with the density of the phosphorus in the oxide.

Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs

2020 ◽  
Vol 1004 ◽  
pp. 652-658
Author(s):  
Judith Berens ◽  
Gregor Pobegen ◽  
Tibor Grasser
Keyword(s):  
Effective Activation Energy ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Device Performance ◽  
Trap Level ◽  
Effective Activation ◽  
Oxide Reliability ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Mos Structures

The interface between the gate oxide and silicon carbide (SiC) has a strong influence on the performance and reliability of SiC MOSFETs and thus, requires special attention. In order to reduce charge trapping at the interface, post oxidation anneals (POAs) are conventionally applied. However, these anneals do not only influence the device performance, such as mobility and on-resistance, but also the gate oxide reliability. We study the oxide tunneling mechanisms of NH3 annealed 4H-SiC trench MOSFET test structures and compare them to devices which received a NO POA. We show that 3 different mechanisms, namely trap assisted tunneling (TAT), Fowler-Nordheim (FN) tunneling and charge trapping are found for NH3 annealed MOS structures whereas only FN-tunneling is observed in NO annealed devices.The tunneling barrier suggest a trap level with an effective activation energy of 382 meV to enable TAT.

Electrical Properties of MOS Structures on 4H-SiC (11-20) Face

2013 ◽  
Vol 740-742 ◽  
pp. 621-624 ◽  
Author(s):  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Kozutoshi Kajima ◽  
Keiko Aryoshi ◽  
Takahito Kojima ◽  
...  
Keyword(s):  
Nitrous Oxide ◽  
Harmful Effect ◽  
Gate Oxide ◽  
The Other ◽  
Oxide Semiconductor ◽  
Power Devices ◽  
Channel Mobility ◽  
Oxide Reliability ◽  
Dry Oxidation ◽  
Mos Structures

Threshold voltage (VTH) instability, channel mobility and oxide reliability have been investigated for meta-oxide-semiconductor (MOS) structures on 4H-SiC (11-20) face using various gate oxidation procedures. Channel mobility of n-channel MOSFET with a gate oxide by pyrogenic oxidation is higher than that by dilute-DRY oxidation followed by a nitrous oxide (N2O) post-oxidation annealing (POA). On the other hand, oxide reliability for the pyrogenic oxides is poor compared with the dilute-DRY/N2O oxides. A Hydrogen POA is effective in an improvement of channel mobility for both oxides, but causes a harmful effect on VTH stability. Temperature dependence of VTH instability indicates that MOS structure grown by dilute-DRY followed by N2O POA is suitable for a practical use of SiC MOS power devices.

Impact of Electrodes on Gate Oxide Reliability: Examples from Isolation and Gate-Stack Processing

1997 ◽  
Vol 473 ◽  
Author(s):  
D. L. Chapek ◽  
K. F. Schuegraf ◽  
R. P. S. Thakur
Keyword(s):  
Integrated Circuits ◽  
Bottom Electrode ◽  
Gate Oxide ◽  
Review Of Literature ◽  
Gate Stack ◽  
Oxide Reliability ◽  
Dielectric System ◽  
Thin Oxide ◽  
The Impact

ABSTRACTThis paper discusses the challenges involved in improving gate oxide reliability for advanced integrated circuits through review of literature and other relevant data. We believe that gate oxide reliability improvements can be engineered by paying special attention to the process conditioning of the top and bottom electrode components of the thin oxide dielectric system in advanced ULSI technologies. We present examples that demonstrate the impact of process and materials on the performance of thin oxide. The data encompasses the effects of substrate, isolation, and top electrodes on gate oxide quality using a variety of methodologies to assess reliability.

Effect of Poly-Si on Electromigration Behaviors and Microstructure Characteristics of Au Metallization

1998 ◽  
Vol 516 ◽  
Author(s):  
T. Lee ◽  
B.R. York ◽  
B. Lindgren ◽  
H. Kentzinger ◽  
J. Lee ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Line Length ◽  
Current Gain ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microstructure Characteristics ◽  
Oxide Reliability ◽  
Thermal Oxide ◽  
The Impact ◽  
Dc Stress

AbstractFor BJT and MOSFET, poly-Si is the most critical layer used as an emitter to improve the current gain in BJT and as a gate to improve the gate oxide reliability in MOSFET. In both cases, the poly-Si is then connected to the conductor. It is very important to understand how poly-Si affects the microstructure and the electromigration behavior of conductor. NIST test structures (length = 800μ, thickness = 0.7μ, widths = 1, 5, 10 μ) with Au conductor and TiW/TiWN/TiW barrier were used to study the impact of poly-Si. Two groups of samples were used: one with poly-Si under the barrier and the other without poly-Si. Thermal oxide was used to isolate the substrate from the conductor and Si3N4, was used as passivation. DC stress was performed at 175, 200, and 225°C. Microbeam X-ray Diffraction (μ XRD) was used to characterize the microstructure of the TiW barrier and Au metallization layers as a function of line length and width. The data indicates that samples with poly-Si have lower electromigration resistance for Au conductors for all widths and temperatures, with higher initial deformation fault densities on poly-Si.

Gate Oxide Reliability Concern Associated with X-Ray Lithography

2000 ◽  
Author(s):  
Byung Jin Cho ◽  
Sun Jung Kim ◽  
Chew Hoe Ang ◽  
Chung Ho Ling ◽  
Moon Sig Joo ◽  
...  
Keyword(s):  
Gate Oxide ◽  
X Ray ◽  
Oxide Reliability

Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

1995 ◽  
Vol 35 (3) ◽  
pp. 603-608 ◽  
Author(s):  
S.R. Anderson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
J.L. Titus
Keyword(s):  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Power Mosfets ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability

scholarly journals PHB/CHIT Scaffold as a Promising Biopolymer in the Treatment of Osteochondral Defects—An Experimental Animal Study

Polymers ◽  
2021 ◽  
Vol 13 (8) ◽  
pp. 1232
Author(s):  
Eva Petrovova ◽  
Marek Tomco ◽  
Katarina Holovska ◽  
Jan Danko ◽  
Lenka Kresakova ◽  
...  
Keyword(s):  
Cartilage Defects ◽  
Osteochondral Defects ◽  
Medial Condyle ◽  
Femoral Trochlea ◽  
X Ray ◽  
Tissue Integration ◽  
Defect Site ◽  
Intact Cartilage ◽  
The Creation ◽  
Magnetic Resonance Imaging Mri

Biopolymer composites allow the creation of an optimal environment for the regeneration of chondral and osteochondral defects of articular cartilage, where natural regeneration potential is limited. In this experimental study, we used the sheep animal model for the creation of knee cartilage defects. In the medial part of the trochlea and on the medial condyle of the femur, we created artificial defects (6 × 3 mm2) with microfractures. In four experimental sheep, both defects were subsequently filled with the porous acellular polyhydroxybutyrate/chitosan (PHB/CHIT)-based implant. Two sheep had untreated defects. We evaluated the quality of the newly formed tissue in the femoral trochlea defect site using imaging (X-ray, Computer Tomography (CT), Magnetic Resonance Imaging (MRI)), macroscopic, and histological methods. Macroscopically, the surface of the treated regenerate corresponded to the niveau of the surrounding cartilage. X-ray examination 6 months after the implantation confirmed the restoration of the contour in the subchondral calcified layer and the advanced rate of bone tissue integration. The CT scan revealed a low regenerative potential in the bone zone of the defect compared to the cartilage zone. The percentage change in cartilage density at the defect site was not significantly different to the reference area (0.06–6.4%). MRI examination revealed that the healing osteochondral defect was comparable to the intact cartilage signal on the surface of the defect. Hyaline-like cartilage was observed in most of the treated animals, except for one, where the defect was repaired with fibrocartilage. Thus, the acellular, chitosan-based biomaterial is a promising biopolymer composite for the treatment of chondral and osteochondral defects of traumatic character. It has potential for further clinical testing in the orthopedic field, primarily with the combination of supporting factors.

Ultra-thin oxide reliability for ULSI applications

2000 ◽  
Vol 15 (5) ◽  
pp. 425-435 ◽  
Author(s):  
Ernest Y Wu ◽  
James H Stathis ◽  
Liang-Kai Han
Keyword(s):  
Oxide Reliability ◽  
Thin Oxide
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