Transmission Electron Microscopy of Mocvd Titanium Nitride Films

1994 ◽  
Vol 337 ◽  
Author(s):  
Toshio Itoh ◽  
Toyohiko J. Konno ◽  
Robert Sinclair ◽  
Ivo J.M.M. Raaijmakers ◽  
Bruce E. Roberts
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Layer Structure ◽  
The Other ◽  
Grain Structure ◽  
Tin Films ◽  
Si Substrates ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Columnar Grain

ABSTRACTThe effect of substrate temperature and process pressure on microstructure of MOCVD-TiN films deposited on oxidized Si substrates are studied by transmission electron microscopy (TEM). It is found that microstructure of MOCVD-TiN films distinctly changes with these deposition parameters and that the resistivity of the films is uniquely related to the microstructure. Films with the lowest resistivity (< 500 μohm-cm) show a uniform semi-columnar grain structure. Films with the highest resistivity (> 10,000 μohm-cm) show a uniform equi-axed micrograin structure. The other films exhibit a bi-layer structure: one layer of semi-columnar grains and the other of equiaxed micrograins. The thickness ratio of these layers changes with the deposition conditions and the resistivity is a unique function of the thickness of the semi-columnar grain layer.

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Sporophytes, megaspores, and massulae of Azolla stanleyi from the Paleocene Joffre Bridge locality, Alberta

1994 ◽  
Vol 72 (3) ◽  
pp. 301-308 ◽  
Author(s):  
Georgia L. Hoffman ◽  
Ruth A. Stockey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Key Words ◽  
Red Deer ◽  
The Other ◽  
Evolutionary Trends ◽  
Reproductive Structures ◽  
Transmission Electron ◽  
New Material

Several hundred vegetative and fertile specimens of Azolla Lam. have been recovered from the Paleocene Paskapoo Formation at the Joffre Bridge locality (Middle Tiffanian (Ti3) age) near Red Deer, Alberta. The spore complexes closely resemble those of the Paleocene A. stanleyi Jain & Hall, and the vegetative material is referred to that species. The specimens are unusually complete in that the remains of the fragile sporophyte are preserved, commonly with reproductive structures in place. Plants reaching up to 2.25 cm in length consist of alternately branched rhizomes bearing alternate, imbricate, sessile leaves. Leaves are ovate with entire margins, papillate surfaces, and a single midvein. Reproductive structures have been examined using light, scanning, and transmission electron microscopy. This new material is compared with the other Paleocene species for which sporophytes are known and discussed in terms of evolutionary trends for the genus. The specimens suggest that most of the vegetative characteristics of modern Azolla species were established by the middle Paleocene. Key words: Azolla, Salviniaceae, megaspore, massula, ultrastructure, Paleocene.

Pollen morphology of Sabinaria magnifica (Cryosophileae, Coryphoideae, Arecaceae)

Phytotaxa ◽  
2015 ◽  
Vol 207 (1) ◽  
pp. 135 ◽  
Author(s):  
Giovanni Raul Bogota ◽  
Carina Hoorn ◽  
Wim Star ◽  
Rob Langelaan ◽  
Hannah Banks ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Light Microscopy ◽  
Pollen Morphology ◽  
Pollen Grains ◽  
The Other ◽  
Transmission Electron ◽  
Palm Species ◽  
Scanning Electron

Sabinaria magnifica is so far the only known species in the recently discovered tropical palm genus Sabinaria (Arecaceae). Here we present a complete description of the pollen morphology of this palm species based on light microscopy (LM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). We also made SEM-based comparisons of Sabinaria with other genera within the tribe Cryosophileae. Pollen grains of Sabinaria magnifica resemble the other genera in the heteropolar, slightly asymmetric monads, and the monosulcate and tectate exine with perforate surface. Nevertheless, there are some clear differences with Thrinax, Chelyocarpus and Cryosophila in terms of aperture and exine. S. magnifica differs from its closest relative, Itaya amicorum, in the exine structure. This study shows that a combination of microscope techniques is essential for the identification of different genera within the Cryosophileae and may also be a necessary when working with other palynologically less distinct palm genera. 

Formation of Excess Donors During High-Dose 74Ge+ Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Z. Xia ◽  
E. Ristolainen ◽  
R. Elliman ◽  
H. Ronkainen ◽  
S. Eränen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Defects ◽  
High Dose ◽  
Donor Concentration ◽  
Materials Analysis ◽  
Si Substrates ◽  
Transmission Electron ◽  
Activation Annealing ◽  
Secondary Ion

AbstractRecently observations that high-dose Ge implantations into Si substrates caused the n-type carrier concentration to increase were attributed to residual structural defects after activation annealing [7,12]. However, co-implantation of an n-type impurity is another possibility. The origin of this excess donor concentration has been studied in this work. The possibilities of residual defects versus implantation of impurities have been investigated using two different implanters and materials analysis. Comparison of data from different implanters showed that the concentration of excess donors was sensitive to the implanter configuration. Furthermore, transmission electron microscopy (TEM), Rutherford backscattering channeling (RBS-C), and spreading resistance profiling (SRP) data showed that the excess donor effect was related to impurities rather than residual defects. Secondary-ion mass spectroscopy (SIMS) and SRP measurements confirmed that impurities such as 75As ions were present after implants. This impurity easily explains the excess donor concentration when 75Ge implants are performed into silicon wafers doped with phosphorous.

Effects of Dopants on the Nucleation and Growth of NiSi2 on Silicon

1987 ◽  
Vol 94 ◽  
Author(s):  
S. W. Lu ◽  
C. W. Nieh ◽  
J. J. Chu ◽  
L. J. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Low Temperatures ◽  
Nucleation And Growth ◽  
The Other ◽  
Size Factor ◽  
Atomic Size ◽  
Nickel Thin Films ◽  
Transmission Electron

ABSTRACTThe influences of implantation impurities, including BF2, B, F, As and P on the formation of epitaxial NiSi2 in nickel thin films on ion-implanted silicon have been investigated by transmission electron microscopy.The presence of BF2, B, and F atoms was observed to promote the epitaxial growth of NiSi2 at low temperatures. Little or no effect on the formation of NiSi2 was found in samples implanted with As or P ions.The results indicated that the influences of the implantation impurities are not likely to be electronic in origin. Good correlation, on the other hand, was found between the atomic size factor and resulting stress and NiSi2 epitaxy at low temperatures.

LOW-Temperature Epitaxial Growth of GaAs on Si Substrates by MBE

1992 ◽  
Vol 263 ◽  
Author(s):  
Ting-Yen Chiang ◽  
En-Huery Liu ◽  
Der-Hwa Yiin ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Defect Density ◽  
Solution Treatment ◽  
Plan View ◽  
Si Substrates ◽  
Gaas On Si ◽  
Transmission Electron

ABSTRACTThis paper presents results of the low—temperature epitaxial growth of GaAs on Si substrates with orientation 1°—4° off (100) by molecular beam epitaxy (MBE). The epitaxial growth ·is carried out on Si wafers subjected to HF solution treatment by “spin-etch” technique before the wafer is transferred to the entry chamber of MBE system. Methods used for reducing defect density in the epitaxial layers are proposed. The characterization techniques include cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, scanning electron microscopy (S EM), and double crystal X-ray diffraction (DCXRD). Epitaxial films with a full width at half—maximum (FWHM) of about 310 arcsec measured by DCXRD are obtained without annealing.-

Multiple twinning of diamond synthesized by acetylene flame

2004 ◽  
Vol 219 (8) ◽  
Author(s):  
Sam Ick Son ◽  
Su Jin Chung
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Back Scatter Diffraction ◽  
The Other ◽  
Hrtem Image ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Multiple Twinning ◽  
Ebsd Method

AbstractThe relation between the domains and domain boundaries of multiple twins of diamond were investigated by the electron back scatter diffraction (EBSD) method and high resolution transmission electron microscopy (HRTEM). Multiple twinned diamonds have two types of icosahedral morphologies. One is an almost perfect icosahedron in which all of the faces are {111} faces. The other is a hollow icosahedron similar to one of the Kepler-Poinsot polyhedrons. The indented negative trigonal faces are formed from the {100} faces of a cube. It was confirmed that the convex edges of the twinned icosahedron corresponded to the Σ3 boundaries, whereas the concave edges were assigned to the Σ9 twin boundary by means of the EBSD analysis.It was confirmed from the HRTEM image that a series of dislocations compensate for the mismatching angle which occurs after five successive twinning.

Phase Analysis of the Precipitates in an Alloy 600/182 Weld

2007 ◽  
Vol 119 ◽  
pp. 111-114 ◽  
Author(s):  
Yun Soo Lim ◽  
Hong Pyo Kim ◽  
Man Kyo Jung ◽  
Joung Soo Kim
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundaries ◽  
Phase Analysis ◽  
Fusion Zone ◽  
Base Metal ◽  
The Other ◽  
Alloy 600 ◽  
Other Hand ◽  
Transmission Electron

The precipitates in the base metal and the fusion zone of an Alloy 600/182 weld were characterized through a transmission electron microscopy. Precipitates in the Alloy 600 base metal were identified as Cr7C3. On the other hand, (Nb,Ti)C, Al-rich and Ti-rich oxides were found on the dendritic interfaces, and tiny Cr-rich M23C6 were distributed on the grain boundaries in the Alloy 182 fusion zone.

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