Investigation of Chromium Nitridation Using Ion Beam Resonance Analysis

1994 ◽  
Vol 337 ◽  
Author(s):  
S.W. Russell ◽  
A.E. Bair ◽  
M.J. Rack ◽  
D. Adams ◽  
R.L. Spreitzer ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Oxygen Impurity ◽  
X Ray Diffraction ◽  
Resonance Analysis ◽  
Depth Sensitivity ◽  
Sputter Deposited ◽  
Nitride Layers ◽  
Chromium Films ◽  
Sample Configuration

ABSTRACTWe investigate the nitridation of chromium films in an NH3 ambient at 500°C. Rutherford backscattering spectrometry using 2.0 MeV He2+ was utilized to determine the compositions of thick reacted layers and to provide calibration for the other techniques. In addition, analysis was performed using the 14N(α,α)14N resonance at 3.72 MeV in order to enhance sensitivity to nitrogen. Sputter-deposited TiN was used as a calibration for the cross section a for this resonance over the energy range 3.05-3.85 MeV and compared to the literature value. We find that analysis just above the peak in the resonance provides excellent sensitivity to N concentration in the nitride layers. This approach may be readily used in conjunction with 2.0 MeV backscattering to determine the overall composition and sample configuration. Auger electron spectroscopy was used to provide more depth sensitivity in compositional profiling and to monitor the oxygen impurity distribution. X-ray diffraction was used to identify phases in both as-deposited and annealed films.

Morphological and Electrical Properties of Silver Thin Films Sputter Deposited on LTCC Substrates

2008 ◽  
Vol 5 (4) ◽  
pp. 169-173 ◽  
Author(s):  
A. Bittner ◽  
T. Bohnenberger ◽  
R. Engel ◽  
H. Seidel ◽  
U. Schmid
Keyword(s):  
Thin Films ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Plasma Power ◽  
X Ray Diffraction ◽  
Deposition Parameters ◽  
Mean Grain Size ◽  
Agglomeration Effects ◽  
Ag Deposition ◽  
Sputter Deposited

Screen printed noble metal thick films are commonly used as metallization on LTCC (low temperature cofired ceramics) substrates. When, however, geometries with a lateral resolution below 20 μm are needed for the realization of devices, alternative techniques are needed, and they are provided by standard thin film technology. To minimize conduction losses, silver (Ag) is favored due to a low bulk resistivity. To evaluate the potential of Ag as metallization, thin films are sputter deposited on glass and LTCC substrates under varying conditions (i.e., plasma power) with different film thicknesses ranging up to 1.75 μm. The microstructure of the Ag films is analyzed applying techniques such as scanning electron microscopy, focused ion beam, and x-ray diffraction. With the latter approach, a mean grain size of about 33 nm is measured independent of plasma power used for Ag deposition. In contrast, the texture strongly varies with deposition parameters resulting in an enhanced generation of (111) planes at higher plasma powers due to an increased adatom mobility. Furthermore, a higher degree in (111) orientation results in a lower resistivity of the Ag films. When the Ag films are postdeposition annealed at 500°C, the resistivity decreases by a factor of 2 compared with the “as deposited” state due to grain growth. Further, sublimation and agglomeration effects dominate leading to an increase in surface roughness and resistivity above average.

scholarly journals Initial Interaction of Crystalline Al/Amorphous Si Bilayer during Annealing

2004 ◽  
Vol 808 ◽  
Author(s):  
Yonghao Zhao ◽  
Jiangyong Wang ◽  
Eric J. Mittemeijer
Keyword(s):  
Auger Electron ◽  
Focused Ion Beam ◽  
Imaging Techniques ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Initial Interaction ◽  
Magnetron Sputter ◽  
Amorphous Si ◽  
Sputter Deposited

ABSTRACTInitial interaction of a magnetron sputter deposited Al(100 nm, {111} fibre textured)/Si(150 nm, amorphous) bilayer, induced by isothermally annealing at 523 K for 60 min in a vacuum of 2.0×10−4 Pa, was studied by X-ray diffraction, Auger electron microscopy and focused-ion beam imaging techniques. Upon annealing, the crystalline Si had grown into the grain boundaries of the Al layer with a {111} texture, a crystallite size of approximate 12 nm and a tensile stress of +138 MPa. Simultaneously, the Al grains had grown into the Si layer from the original interface of the a-Si and Al sublayers with the lateral grain growth. The stress parallel to the surface of the Al layer had changed from +27 MPa to +232 MPa after annealing.

STUDY OF ION BEAM SYNTHESIZED YSi2-x LAYERS

2010 ◽  
Vol 09 (06) ◽  
pp. 549-552
Author(s):  
AYACHE RACHID ◽  
BOUABELLOU ABDERRAHMANE ◽  
EICHHORN FRANK
Keyword(s):  
Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Pole Figures ◽  
Different Temperatures ◽  
Scanning Electron

The processes in the synthesis of a thin layer of hexagonal YSi 2-x phase on a single-crystal Si (111) substrate by implantation of 195 keV Y ions with a dose of 2 × 1017 Y +/ cm 2 at 300°C followed by annealing in an N2 atmosphere at different temperatures for 1 h are investigated. The characterization of the as-implanted and annealed samples is performed using Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD) pole figures. Scanning electron microscopy (SEM) was used to view the surface topography. The results show that the orientation relationship between the YSi 2-x layer and Si substrate is YSi 2-x(0001)// Si (111) and YSi 2-x[11–20]// Si [110].

scholarly journals Composition and Structure of Sputter Deposited Erbium Hydride thin Films

2000 ◽  
Vol 616 ◽  
Author(s):  
D.P. Adams ◽  
J.A. Romero ◽  
M.A. Rodriguez ◽  
J.A. Floro ◽  
J.C. Banks
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Density Ratio ◽  
Areal Density ◽  
Ion Beam Sputtering ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Metal Sublattice ◽  
Sputter Deposited

AbstractErbium hydride thin films are grown onto polished, a-axis α Al2O3 (sapphire) substrates by reactive ion beam sputtering and analyzed to determine composition, phase and microstructure. Erbium is sputtered while maintaining a H2 partial pressure of 1.4 ×10−4 Torr. Growth is conducted at several substrate temperatures between 30 and 500°C. Rutherford backscattering spectrometry (RBS) and elastic recoil detection analyses after deposition show that the H/Er areal density ratio is approximately 3:1 for growth temperatures of 30, 150 and 275°C, while for growth above ∼430 °C, the ratio of hydrogen to metal is closer to 2:1. However, x-ray diffraction shows that all films have a cubic metal sublattice structure corresponding to that of ErH2. RBS and Auger electron spectroscopy confirm that sputtered erbium hydride thin films are relatively free of impurities.

Titanium Silicidation and Secondary Defect Annihilation in ION Beam Processed Sige Layers

1995 ◽  
Vol 402 ◽  
Author(s):  
K. Kyllesbech Larsen ◽  
F. La Via ◽  
S. Lombardo ◽  
V. Raineri ◽  
R. A. Donaton ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Process Conditions ◽  
High Dose ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
Implantation Energy ◽  
Transmission Electron ◽  
Secondary Defect ◽  
20 Nm

AbstractThe secondary defect annihilation by one- and two-step titanium silicidation in SiGe layers, formed by high dose Ge implantation, has been studied systematically as a function of the Ge fluence, implantation energy, silicide thickness, and silicide process conditions. In all cases the Ti thickness was kept below 20 nm, resulting in very thin Ti silicide layers typically less than 40 nm. The silicide phase was inspected by x-ray diffraction and transmission electron diffraction. Channelling Rutherford backscattering spectrometry and transmission electron microscopy were used to follow the end of range dislocation loop annihilation as a function of the silicide process conditions. The end of range loop annealing and the influence of silicidation is presented in this paper for Ge fluences above 3×1015 cm−2 and energies ranging from 70 keV to 140 keV. A model based on loop coarsening is presented which describes the observed loop annihilation behaviour.

Growth Rate of Solder Intermetallics

1993 ◽  
Vol 316 ◽  
Author(s):  
J. D. Demaree
Keyword(s):  
Growth Rate ◽  
Solder Joint ◽  
Elevated Temperatures ◽  
Rutherford Backscattering Spectrometry ◽  
Formation Rate ◽  
Compound Formation ◽  
Intermetallic Growth ◽  
Depth Sensitivity ◽  
Sputter Deposited ◽  
Pbsn Solder

ABSTRACTThe formation of intermetallic layers between copper wires and lead-tin solders is indicative of the strong metallurgical bond required for a durable solder joint Previous studies have shown that these interracial compounds grow at significant rates (up to 1 µm/day at 100°C), and differences in thermal expansion and hardness between the metals and the intermetallics can lead to the mechanical failure of the solder joint during service. Most previous measurements of the compound formation rate have used elevated temperatures to facilitate the direct observation of the intermetallic thickness by optical microscopy, SEM, or TEM. In this study, Rutherford backscattering spectrometry (RBS) has been used to study the intermetallic growth rate using sputter-deposited thin films of Cu and PbSn. The extraordinary depth sensitivity of RBS (~10 nm) allows these measurements to be made in relatively short times, without the need for heat treatment to accelerate the reaction. Measurements have indicated that at least 23 nm of Cu6Sn5 and 30 nm of Cu3Sn form between Cu and PbSn solder in less than one hour. Faster deposition methods are being investigated to further characterize this rapid reaction. Iron has been proposed as a diffusion barrier material to inhibit intermetallic growth in solder joints. Preliminary measurements of the solder/Fe reaction indicates a much slower rate of growth, with less than 50 nm of total intermetallic forming over 8 hours.

Investigation of the interface reactions of Ti thin films with AlN substrate

1997 ◽  
Vol 12 (3) ◽  
pp. 846-851 ◽  
Author(s):  
Xiangjun He ◽  
Si-Ze Yang ◽  
Kun Tao ◽  
Yudian Fan
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Reaction Products ◽  
X Ray Diffraction ◽  
X Ray ◽  
Interface Reactions ◽  
Transmission Electron ◽  
Argon Ion Bombardment

Pure bulk AlN substrates were prepared by hot-pressing to eliminate the influence of an aid-sintering substance on the interface reactions. AlN thin films were deposited on Si(111) substrates to decrease the influence of charging on the analysis of metal/AlN interfaces with x-ray photoelectron spectroscopy (XPS). Thin films of titanium were deposited on bulk AlN substrates by e-gun evaporation and ion beam assisted deposition (IBAD) and deposited on AlN films in situ by e-gun evaporation. Solid-state reaction products and reaction mechanism of the Ti/AlN system annealed at various temperatures and under IBAD were investigated by XPS, transmission electron microscopy (TEM), x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS). Ti reacted with AlN to form a laminated structure in the temperature range of 600 °C to 800 °C. The TiAl3 phase was formed adjacent to the AlN substrate, TiN, and Ti4N3−x as well as Ti2N were formed above the TiAl3 layer at the interface. Argon ion bombardment during Ti evaporation promoted the interface reactions. No reaction products were detected for the sample as-deposited by evaporation. However, XPS depth profile of the Ti/AlN/Si sample showed that Ti–N binding existed at the interface between the AlN thin films and the Ti thin films.

Ion Beam Synthesis by Tungsten-Implantation Into 6H-SIC

1994 ◽  
Vol 354 ◽  
Author(s):  
Hannes Weishart ◽  
J. Schöneich ◽  
H. J. Steffen ◽  
W. Matz ◽  
W. Skorupa
Keyword(s):  
Tungsten Carbide ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Dose ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conductive Surface ◽  
Chemical States ◽  
High Dose Implantation

AbstractWe studied high-dose implantation of tungsten into 6H-silicon carbide in order to synthesize a highly conductive surface layer. Implantation was performed at 200 keV at room temperature. Subsequently, the samples were annealed in two steps at 500°C and 700°C or 950°C, respectively. The influence of dose and annealing temperature on the reaction of W with SiC was investigated. Rutherford Backscattering Spectrometry (RBS), X-Ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) contributed to study structure and composition of the layer as well as chemical states of the elements. During implantation sputtering became significant at a dose exceeding 1.0×1017 W+cm−2. Formation of tungsten carbide and suicide was observed already in the as-implanted state. An annealing temperature of 950°C was necessary to crystallize tungsten carbide. However, tungsten suicide remained amorphous at this temperature. Therefore, a mixture of polycrystalline tungsten carbide and amorphous tungsten suicide evolved under these conditions. The resistivity of such a layer implanted with 1.0×1017 W+ cm−2 and annealed at 950°C is 565 μΩcm.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

scholarly journals A New High-Throughput Focused MeV Ion-Beam Analysis Setup

Instruments ◽  
2021 ◽  
Vol 5 (1) ◽  
pp. 10
Author(s):  
Sören Möller ◽  
Daniel Höschen ◽  
Sina Kurth ◽  
Gerwin Esser ◽  
Albert Hiller ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Complete Analysis ◽  
Nuclear Reaction Analysis ◽  
Beam Optics ◽  
Single Measurement ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Technical Solutions

The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5*10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.

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