Eutectic Bonding for Inducing In-Plane Strain in Gaas and Gaas/Algaas MQW Thin Films

1994 ◽  
Vol 337 ◽  
Author(s):  
Y. Lu ◽  
H. C. Kuo ◽  
C. H. Lin ◽  
H. Shen ◽  
F. Ren ◽  
...  
Keyword(s):  
Thin Films ◽  
Plane Strain ◽  
Annealing Temperature ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Adhesion Layer ◽  
Thermally Induced ◽  
New Class ◽  
Linearly Polarized ◽  
Reflectance Measurements

ABSTRACTWe present a process for creating in-plane anisotropic strain in (100) GaAs and GaAs/AlGaAs multiple quantum well (MQW) thin films. The host substrates used for bonding include (100) GaAs, (100) silicon, and lithium tantalate (LiTaO3) with a special crystalline orientation. A mutilayer metallization consisting of Au-Sn (Au: 80 wt% , Sn: 20 wt%, 0.95μm), Ti (500Å) adhesion layer and Pt (500Å) barrier layer is deposited on the thin films and the host substrates. By choosing a proper annealing temperature (380°C) and thickness of eutectic layer, the thin films and the substrates are bonded together. Photoluminescence measurements do not reveal any thermally induced strain in the thin films bonded to GaAs; however, they show the existence of in-plane biaxial strain in the films bonded on Si. Linearly polarized reflectance measurements reveal an optical anisotropy in the MQW bonded to LiTaO3, which possesses an orientation-dependent thermal expansion. This indicates that the in-plane strain in the thin films is induced by the different thermal expansions between the thin films and the substrates. This process can be used to develop a new class of devices with an artificially induced in-plane strain.

Optical study of lift-off multiple quantum well thin films under various types of thermally induced in-plane strain

1994 ◽  
Author(s):  
Hongen Shen ◽  
Michael Wraback ◽  
Jagadeesh Pamulapati ◽  
Monica A. Taysing-Lara ◽  
Weimin Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantum Well ◽  
Plane Strain ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Study ◽  
Thermally Induced ◽  
Lift Off

Microstructure and Strain in GaAs/AlGaAs MQW thin Films Bonded to Different Substrates by Eutectic Alloying

1994 ◽  
Vol 356 ◽  
Author(s):  
C. H. Lin ◽  
H. C. Kuo ◽  
Y. Lu ◽  
H. Shen ◽  
J. Pamulapati ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Plane Strain ◽  
Multiple Quantum Well ◽  
Strain Effect ◽  
Multiple Quantum ◽  
New Device ◽  
Device Applications ◽  
Bonding Technique

AbstractResearch of the strain effect on semiconductors and their heterostructures has generated increasing interests due to its important device applications. We have developed a eutectic bonding technique to create in-plane anisotropic strain in GaAs/AlGaAs multiple quantum well (MQW) thin films. MQW thin films grown on (100) GaAs substrates were bonded to (100) GaAs, (100) Si and Y-cut LiNbO3 submounts with a Au/Sn eutectic alloy. The bonding materials consist of Au/Sn multilayer (80 wt% Au and 20 wt% Sn; 0.95μm) with a Cr (500Å) adhesion layer. The bonding process was optimized by carefully choosing the annealing conditions. After bonding, the substrates of the MQWs were removed by wet chemical etching. The in-plane strain was induced in MQW thin film due to the different thermal expansion between the thin film and submount. The strain was characterized using X-ray rocking curve. The microstructures of bonding interfaces and MQW thin films were examined by scanning electron microscope(SEM) and cross-section transmission electron microscope (XTEM). This bonding technique can be used for many new device applications which take the advantage of in-plane strain, as well as for device integration.

scholarly journals Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

2001 ◽  
Vol 692 ◽  
Author(s):  
J. Zhao ◽  
X. D. Zhang ◽  
Z. C. Feng ◽  
J. C. Deng ◽  
P. Jin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Annealing Temperature ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Cladding Layer ◽  
Cap Layer ◽  
Free Vacancy

AbstractInGaAsP/InP multiple quantum wells have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blue shift was observed. Si3N4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal anne aling (RTA). The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.

scholarly journals Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

2001 ◽  
Vol 693 ◽  
Author(s):  
J. Zhao ◽  
X. D. Zhang ◽  
Z. C. Feng ◽  
J. C. Deng ◽  
P. Jin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Annealing Temperature ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Cladding Layer ◽  
Cap Layer ◽  
Free Vacancy

AbstractInGaAsP/InP multiple quantum wells have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blue shift was observed. Si3N4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal anne aling (RTA). The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.

Multiple quantum well optical nonlinearities: bistability from increasing absorption and the self electro-optic device

1984 ◽  
Vol 313 (1525) ◽  
pp. 239-244 ◽  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Optical Switch ◽  
Resonant Cavity ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
New Class ◽  
Electro Optic ◽  
Semiconductor Electronics

This paper briefly reviews the nonlinear optical and electro-optical properties and applications of GaAs—AlGaAs multiple quantum wells, all of which are compatible with laser diodes or semiconductor electronics or both. They show large nonlinear absorption and refraction (associated with their strong room-temperature exciton resonances) applicable to all-optical devices. They also show large electroabsorptive effects, some of which are unique to the quantum wells at any temperature, which are so strong that optical modulators can be made with micrometre dimensions. A new class of optical bistability (due to increasing absorption) is also reviewed; combination of this with the electroabsorptive effects enables a new mirrorless optical switch called a Self Electro-optic Effect Device (SEED), which sets a new standard for optical switching energies, with energy densities reduced by a factor of six by comparison to even the best resonant cavity devices.

scholarly journals Electrorefraction beyond the excitonic resonance in GaAs/AlGaAs multiple quantum well structure in the Franz-Keldysh geometry

2020 ◽  
Vol 12 (4) ◽  
pp. 109
Author(s):  
Marek Wichtowski
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Photonic Devices ◽  
Multiple Quantum ◽  
Thermally Induced ◽  
Quantum Well Structures ◽  
Oxford University ◽  
Semiconductor Quantum Well ◽  
Order Of Magnitude ◽  
Induced Changes

The Kramers-Kronig relations were used to estimate electrorefractivity near the edge of the exciton absorption peak of GaAs/AlGaAs photorefractive quantum well (PMQW) structure working in the Franz-Keldysh geometry. It was shown that for both TE and TM polarizations the change of the refractive index under an applied electric field is at least an order of magnitude greater than in bulk semi-insulating GaAs due to the classical Franz-Keldysh effect. Full Text: PDF ReferencesD.D. Nolte, M. R. Melloch in: Photorefractive effects and Materials, ed. by D. D. Nolte (Kluwer, Dordrecht 1995). CrossRef T. E.Van Eck, L. M. Walpita, W.S.C. Chang, H. H. Wieder, "Franz–Keldysh electrorefraction and electroabsorption in bulk InP and GaAs", Appl. Phys. Lett. 48, 451 (1986). CrossRef P.K. Basu, Theory of Optical Processes in Semiconductors, (Oxford University Press, 2003) ch. 7. CrossRef A Partovi. E.M. Garmire, "Band‐edge photorefractivity in semiconductors: Theory and experiment", J. Appl. Phys. 69, 6885 (1991). CrossRef J. S. Weiner, D. A. B. Miller, D. S. Chemla, et. al. "Strong polarization‐sensitive electroabsorption in GaAs/AlGaAs quantum well waveguides", Appl. Phys. Lett. 47, 1148 (1985). CrossRef D. S. Chemla, D. A. B. Miller, "Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structures", JOSA A, 2 1155, (1985). CrossRef S.L. Chuang, Physics of Photonic Devices (2-nd ed. New Jersey, Wiley & Sons 2009), ch. 14. DirectLink E. Miśkiewicz, A. Ziółkowski, M. Wichtowski, E. Weinert - Rączka, "Thermally induced changes of the electro-optical properties of semi-insulating GaAs/AlGaAs multiple quantum well structures", Opt. Mat. 89, 231 (2019). CrossRef E.Weinert-Rączka, R.Iwanow, "Asymetric directional coupler controlled by photorefractive grating", Acta Phys. Pol. A 95, 813 (1999). CrossRef

scholarly journals Piezoelectric Quantization in GaInN thin Films and Multiple Quantum Well Structures

1998 ◽  
Vol 512 ◽  
Author(s):  
Christian Wetzel ◽  
Tetsuya Takeuchi ◽  
Hiroshi Amano ◽  
Isamu Akasaki
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Piezoelectric Coefficient ◽  
Composition Dependence ◽  
Multiple Quantum Well ◽  
Device Performance ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Piezoelectric Field ◽  
Franz Keldysh Effect

ABSTRACTDetails of the electronic bandstructure in pseudomorphic Gal-xInxN/GaN single heterostructures (0 < x < 0.22) are studied. In photocarrier modulated reflectance strong modulation of the density of states (Franz-Keldysh oscillations) is found due to a piezoelectric field of about 0.6 MV/cm in the strained layer. No excitons are expected to form in the presence of this field. Studying the composition dependence we determine a piezoelectric coefficient ∂|P|/∂εzz = 0.46 C/m2 and extrapolate a spontaneous polarization in GaN |Peq| = 3.9 mC/m2. Photoreflection indicates the presence of localized tail states 50 – 100 meV below the bandgap which are well explained by the Franz-Keldysh effect involving k non-conserving transitions in the large electric field. Luminescence is found to originate in these electric field induced states. The derived bandgap energies can be approximated by an interpolation yielding bowing parameters b = 2.6 eV (photoreflection) and b = 3.2 eV (luminescence) for pseudomorphic films with 0.07 ≤ x ≤ 0. 22. These findings may affect interpretation of device performance.

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