Optical study of lift-off multiple quantum well thin films under various types of thermally induced in-plane strain

1994 ◽  
Author(s):  
Hongen Shen ◽  
Michael Wraback ◽  
Jagadeesh Pamulapati ◽  
Monica A. Taysing-Lara ◽  
Weimin Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantum Well ◽  
Plane Strain ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Study ◽  
Thermally Induced ◽  
Lift Off

Eutectic Bonding for Inducing In-Plane Strain in Gaas and Gaas/Algaas MQW Thin Films

1994 ◽  
Vol 337 ◽  
Author(s):  
Y. Lu ◽  
H. C. Kuo ◽  
C. H. Lin ◽  
H. Shen ◽  
F. Ren ◽  
...  
Keyword(s):  
Thin Films ◽  
Plane Strain ◽  
Annealing Temperature ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Adhesion Layer ◽  
Thermally Induced ◽  
New Class ◽  
Linearly Polarized ◽  
Reflectance Measurements

ABSTRACTWe present a process for creating in-plane anisotropic strain in (100) GaAs and GaAs/AlGaAs multiple quantum well (MQW) thin films. The host substrates used for bonding include (100) GaAs, (100) silicon, and lithium tantalate (LiTaO3) with a special crystalline orientation. A mutilayer metallization consisting of Au-Sn (Au: 80 wt% , Sn: 20 wt%, 0.95μm), Ti (500Å) adhesion layer and Pt (500Å) barrier layer is deposited on the thin films and the host substrates. By choosing a proper annealing temperature (380°C) and thickness of eutectic layer, the thin films and the substrates are bonded together. Photoluminescence measurements do not reveal any thermally induced strain in the thin films bonded to GaAs; however, they show the existence of in-plane biaxial strain in the films bonded on Si. Linearly polarized reflectance measurements reveal an optical anisotropy in the MQW bonded to LiTaO3, which possesses an orientation-dependent thermal expansion. This indicates that the in-plane strain in the thin films is induced by the different thermal expansions between the thin films and the substrates. This process can be used to develop a new class of devices with an artificially induced in-plane strain.

Thin-film multiple-quantum-well solar cells fabricated by epitaxial lift-off process

2018 ◽  
Vol 57 (8S3) ◽  
pp. 08RF03 ◽  
Author(s):  
Tatsuya Nakata ◽  
Kentaroh Watanabe ◽  
Naoya Miyashita ◽  
Hassanet Sodabanlu ◽  
Maxime Giteau ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Lift Off

The Integration of InxGa1-xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off

2000 ◽  
Vol 39 (Part 2, No. 12A) ◽  
pp. L1203-L1205 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
Ping Mei ◽  
David W. Treat ◽  
Mark Teepe ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Lift Off ◽  
Multiple Quantum Well Laser

Optical Study of AlGaN/GaN Multiple Quantum Well Structures Grown on Laterally Overgrown GaN Templates

2002 ◽  
Vol 190 (1) ◽  
pp. 107-111 ◽  
Author(s):  
G. Pozina ◽  
J.P. Bergman ◽  
B. Monemar ◽  
S. Kamiyama ◽  
M. Iwaya ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Study ◽  
Quantum Well Structures

scholarly journals Performance characteristics of cw InGaN multiple-quantum-well laser diodes

2000 ◽  
Vol 639 ◽  
Author(s):  
Michael Kneissl ◽  
William S. Wong ◽  
Chris. G. Van de Walle ◽  
John E. Northrup ◽  
David W. Treat ◽  
...  
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Performance Characteristics ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Lift Off ◽  
Multiple Quantum Well Laser

ABSTRACTThe performance characteristics are reported for continuous-wave (cw) InGaN multiple-quantum-well laser diodes grown on epitaxially laterally overgrown GaN on sapphire substrates by metalorganic chemical vapor deposition. Room-temperature cw threshold currents as low as 41mA with operating voltages of 6.0V were obtained. The emission wavelength was near 400 nm with output powers greater than 20 mW per facet. Under cw conditions laser oscillation was observed up to 90°C. A significant reduction in thermal resistance was observed for laser diodes transferred from sapphire onto Cu substrates by excimer laser lift-off, resulting in increased cw output power of more than 100mW.

scholarly journals Electrorefraction beyond the excitonic resonance in GaAs/AlGaAs multiple quantum well structure in the Franz-Keldysh geometry

2020 ◽  
Vol 12 (4) ◽  
pp. 109
Author(s):  
Marek Wichtowski
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Photonic Devices ◽  
Multiple Quantum ◽  
Thermally Induced ◽  
Quantum Well Structures ◽  
Oxford University ◽  
Semiconductor Quantum Well ◽  
Order Of Magnitude ◽  
Induced Changes

The Kramers-Kronig relations were used to estimate electrorefractivity near the edge of the exciton absorption peak of GaAs/AlGaAs photorefractive quantum well (PMQW) structure working in the Franz-Keldysh geometry. It was shown that for both TE and TM polarizations the change of the refractive index under an applied electric field is at least an order of magnitude greater than in bulk semi-insulating GaAs due to the classical Franz-Keldysh effect. Full Text: PDF ReferencesD.D. Nolte, M. R. Melloch in: Photorefractive effects and Materials, ed. by D. D. Nolte (Kluwer, Dordrecht 1995). CrossRef T. E.Van Eck, L. M. Walpita, W.S.C. Chang, H. H. Wieder, "Franz–Keldysh electrorefraction and electroabsorption in bulk InP and GaAs", Appl. Phys. Lett. 48, 451 (1986). CrossRef P.K. Basu, Theory of Optical Processes in Semiconductors, (Oxford University Press, 2003) ch. 7. CrossRef A Partovi. E.M. Garmire, "Band‐edge photorefractivity in semiconductors: Theory and experiment", J. Appl. Phys. 69, 6885 (1991). CrossRef J. S. Weiner, D. A. B. Miller, D. S. Chemla, et. al. "Strong polarization‐sensitive electroabsorption in GaAs/AlGaAs quantum well waveguides", Appl. Phys. Lett. 47, 1148 (1985). CrossRef D. S. Chemla, D. A. B. Miller, "Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structures", JOSA A, 2 1155, (1985). CrossRef S.L. Chuang, Physics of Photonic Devices (2-nd ed. New Jersey, Wiley & Sons 2009), ch. 14. DirectLink E. Miśkiewicz, A. Ziółkowski, M. Wichtowski, E. Weinert - Rączka, "Thermally induced changes of the electro-optical properties of semi-insulating GaAs/AlGaAs multiple quantum well structures", Opt. Mat. 89, 231 (2019). CrossRef E.Weinert-Rączka, R.Iwanow, "Asymetric directional coupler controlled by photorefractive grating", Acta Phys. Pol. A 95, 813 (1999). CrossRef

Microstructure and Strain in GaAs/AlGaAs MQW thin Films Bonded to Different Substrates by Eutectic Alloying

1994 ◽  
Vol 356 ◽  
Author(s):  
C. H. Lin ◽  
H. C. Kuo ◽  
Y. Lu ◽  
H. Shen ◽  
J. Pamulapati ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Plane Strain ◽  
Multiple Quantum Well ◽  
Strain Effect ◽  
Multiple Quantum ◽  
New Device ◽  
Device Applications ◽  
Bonding Technique

AbstractResearch of the strain effect on semiconductors and their heterostructures has generated increasing interests due to its important device applications. We have developed a eutectic bonding technique to create in-plane anisotropic strain in GaAs/AlGaAs multiple quantum well (MQW) thin films. MQW thin films grown on (100) GaAs substrates were bonded to (100) GaAs, (100) Si and Y-cut LiNbO3 submounts with a Au/Sn eutectic alloy. The bonding materials consist of Au/Sn multilayer (80 wt% Au and 20 wt% Sn; 0.95μm) with a Cr (500Å) adhesion layer. The bonding process was optimized by carefully choosing the annealing conditions. After bonding, the substrates of the MQWs were removed by wet chemical etching. The in-plane strain was induced in MQW thin film due to the different thermal expansion between the thin film and submount. The strain was characterized using X-ray rocking curve. The microstructures of bonding interfaces and MQW thin films were examined by scanning electron microscope(SEM) and cross-section transmission electron microscope (XTEM). This bonding technique can be used for many new device applications which take the advantage of in-plane strain, as well as for device integration.

Optical study of ann‐type modulation‐doped GaAs/AlAs multiple quantum well structure

1993 ◽  
Vol 74 (3) ◽  
pp. 2100-2102 ◽  
Author(s):  
T. Schmiedel ◽  
L. P. Fu ◽  
S. T. Lee ◽  
W. Y. Yu ◽  
A. Petrou ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Study ◽  
Quantum Well Structure
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