Epitaxial Growth of CoSi2/Si Hetero-Structure by Solid State Interaction of Co/Ti/Si Multilayer

1994 ◽  
Vol 337 ◽  
Author(s):  
Bing-zong Li ◽  
Wei-Jun Wu ◽  
Kai Shao ◽  
Zhi-Guang Gu ◽  
Guo-Bao Jiang ◽  
...  
Keyword(s):  
Solid State ◽  
Epitaxial Growth ◽  
Multilayer Structure ◽  
State Interaction ◽  
Si Substrate ◽  
Ternary Interaction ◽  
Hetero Structure ◽  
Diffusion Controlled ◽  
Annealing Procedure ◽  
Solid State Interaction

ABSTRACTA new method of epitaxial growth of CoSi2 film on Si substrate by ternary solid state interaction is investigated. XRD, RBS and TEM show that single-crystalline CoSi2 can be formed on both Si (111) and (100) substrates by using Co/Ti/Si or TiN/Co/Ti/Si multilayer. The evolution of multilayer structure and its resistivity is studied and epitaxy mechanism is discussed. Experimental results indicate strong affinity between Co and Si. During the ternary interaction the epitaxial CoSi2 can be grown directly on Si and its growth may behave as a diffusion controlled process. The thickness of Ti layer and the annealing procedure have important effect on CoSi2 epitaxial growth.

Solid-state interaction between nickel and YBa2Cu3Ox

1989 ◽  
Vol 2 (1) ◽  
pp. 25-28 ◽  
Author(s):  
B Champagne ◽  
L Parent ◽  
C Moreau
Keyword(s):  
Solid State ◽  
State Interaction ◽  
Solid State Interaction

The formation of disordered intermetallic phase during the solid-state interaction of WC with Ir

2019 ◽  
Vol 775 ◽  
pp. 503-510 ◽  
Author(s):  
V. Rybin ◽  
V. Lozanov ◽  
A. Utkin ◽  
A. Matvienko ◽  
N. Baklanova
Keyword(s):  
Solid State ◽  
Intermetallic Phase ◽  
State Interaction ◽  
Solid State Interaction

Solid State Interaction and Nano-Scale Silicide Formation for Co/Ti Multilayers on Silicon

1992 ◽  
Vol 260 ◽  
Author(s):  
Feng Hong ◽  
Bijoy K. Patnaik ◽  
George A. Rozgonyi
Keyword(s):  
Solid State ◽  
Diffusion Barrier ◽  
Critical Parameter ◽  
Thermal Evaporation ◽  
Amorphous Layer ◽  
Selective Removal ◽  
State Interaction ◽  
Silicide Formation ◽  
Dual Source ◽  
Solid State Interaction

ABSTRACTThe formation of a 12nm thick, continuous and thermally stable COSi2 layer was described in our previous work [MRS Proc. 238, 587 (1992)]. Interdiffusion in the Co/Ti-Si multilayer system has been further studied and the initial Ti(O) thickness is shown to be a critical parameter in controlling its effectiveness as a diffusion barrier, and in modulating the Co-Si and Ti-Si compctctive reactions. Three Ti(O) and three Co layers with thickness from ∼5nm 20nm were deposited sequentially, with Ti(O) as the first layer, on Si-(100) substrates by dual source thermal evaporation. The morphology of the CoSix/Si interface was strongly influenced by Ti(O) thickness from ∼5nm to ∼10nm, and a 12nm thick uniform CoSi2 layer with ∼28μΩ-cm resistivity was produced as decribed previously. When the initial Ti(O) thickness was increased to ∼20nm and the Co thickness set at -10nm, Co diffusion was suppressed and Ti reacted with Si yielding an ∼10nm amorphous TiSix layer at 550°C. This amorphous layer transformed to a 15nm thick uniform C-54 TiSi2 layer after selective removal of upper layers and a 750°C plus 800°C annealing. A flat silicide/Si interface and a ∼58μΩ-cm resistivity were obtained. The significance of both thermodynamic and kinetic factors in the compctetive reactions is discussed.

Solid-State Interaction of Trimethylammonioalkylferrocene Iodides with Primary Amines.

ChemInform ◽  
2004 ◽  
Vol 35 (17) ◽  
Author(s):  
N. S. Khrushcheva ◽  
O. V. Shakhova ◽  
V. I. Sokolov
Keyword(s):  
Solid State ◽  
State Interaction ◽  
Primary Amines ◽  
Solid State Interaction

Solid-state interaction between NaY zeolite and vanadium pentoxide, molybdenum trioxide, or tungsten trioxide

Zeolites ◽  
1993 ◽  
Vol 13 (4) ◽  
pp. 269-275 ◽  
Author(s):  
J. Thoret ◽  
C. Marchal ◽  
C. Dorémieux-Morin ◽  
P.P. Man ◽  
M. Gruia ◽  
...  
Keyword(s):  
Solid State ◽  
Vanadium Pentoxide ◽  
Tungsten Trioxide ◽  
Molybdenum Trioxide ◽  
State Interaction ◽  
Nay Zeolite ◽  
Solid State Interaction
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