Solid-State Interaction of Trimethylammonioalkylferrocene Iodides with Primary Amines.

ChemInform ◽  
2004 ◽  
Vol 35 (17) ◽  
Author(s):  
N. S. Khrushcheva ◽  
O. V. Shakhova ◽  
V. I. Sokolov
Keyword(s):  
Solid State ◽  
State Interaction ◽  
Primary Amines ◽  
Solid State Interaction

Solid-state interaction of trimethylammonioalkylferrocene iodides with primary amines

2003 ◽  
Vol 52 (10) ◽  
pp. 2146-2148 ◽  
Author(s):  
N. S. Khrushcheva ◽  
O. V. Shakhova ◽  
V. I. Sokolov
Keyword(s):  
Solid State ◽  
State Interaction ◽  
Primary Amines ◽  
Solid State Interaction

Solid-state interaction between nickel and YBa2Cu3Ox

1989 ◽  
Vol 2 (1) ◽  
pp. 25-28 ◽  
Author(s):  
B Champagne ◽  
L Parent ◽  
C Moreau
Keyword(s):  
Solid State ◽  
State Interaction ◽  
Solid State Interaction

The formation of disordered intermetallic phase during the solid-state interaction of WC with Ir

2019 ◽  
Vol 775 ◽  
pp. 503-510 ◽  
Author(s):  
V. Rybin ◽  
V. Lozanov ◽  
A. Utkin ◽  
A. Matvienko ◽  
N. Baklanova
Keyword(s):  
Solid State ◽  
Intermetallic Phase ◽  
State Interaction ◽  
Solid State Interaction

Solid State Interaction and Nano-Scale Silicide Formation for Co/Ti Multilayers on Silicon

1992 ◽  
Vol 260 ◽  
Author(s):  
Feng Hong ◽  
Bijoy K. Patnaik ◽  
George A. Rozgonyi
Keyword(s):  
Solid State ◽  
Diffusion Barrier ◽  
Critical Parameter ◽  
Thermal Evaporation ◽  
Amorphous Layer ◽  
Selective Removal ◽  
State Interaction ◽  
Silicide Formation ◽  
Dual Source ◽  
Solid State Interaction

ABSTRACTThe formation of a 12nm thick, continuous and thermally stable COSi2 layer was described in our previous work [MRS Proc. 238, 587 (1992)]. Interdiffusion in the Co/Ti-Si multilayer system has been further studied and the initial Ti(O) thickness is shown to be a critical parameter in controlling its effectiveness as a diffusion barrier, and in modulating the Co-Si and Ti-Si compctctive reactions. Three Ti(O) and three Co layers with thickness from ∼5nm 20nm were deposited sequentially, with Ti(O) as the first layer, on Si-(100) substrates by dual source thermal evaporation. The morphology of the CoSix/Si interface was strongly influenced by Ti(O) thickness from ∼5nm to ∼10nm, and a 12nm thick uniform CoSi2 layer with ∼28μΩ-cm resistivity was produced as decribed previously. When the initial Ti(O) thickness was increased to ∼20nm and the Co thickness set at -10nm, Co diffusion was suppressed and Ti reacted with Si yielding an ∼10nm amorphous TiSix layer at 550°C. This amorphous layer transformed to a 15nm thick uniform C-54 TiSi2 layer after selective removal of upper layers and a 750°C plus 800°C annealing. A flat silicide/Si interface and a ∼58μΩ-cm resistivity were obtained. The significance of both thermodynamic and kinetic factors in the compctetive reactions is discussed.

Solid-state interaction between NaY zeolite and vanadium pentoxide, molybdenum trioxide, or tungsten trioxide

Zeolites ◽  
1993 ◽  
Vol 13 (4) ◽  
pp. 269-275 ◽  
Author(s):  
J. Thoret ◽  
C. Marchal ◽  
C. Dorémieux-Morin ◽  
P.P. Man ◽  
M. Gruia ◽  
...  
Keyword(s):  
Solid State ◽  
Vanadium Pentoxide ◽  
Tungsten Trioxide ◽  
Molybdenum Trioxide ◽  
State Interaction ◽  
Nay Zeolite ◽  
Solid State Interaction
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