Mobility-Lifetime Products in Glow Discharge and RF Sputter Deposited A-Si:H

1994 ◽  
Vol 336 ◽  
Author(s):  
M. H. Farias ◽  
A. Roche ◽  
S. Z. Weisz ◽  
H. Jia ◽  
J. Shinar ◽  
...  
Keyword(s):  
Light Intensity ◽  
Glow Discharge ◽  
Comparative Study ◽  
Deposition Temperature ◽  
Charge Carriers ◽  
Dangling Bonds ◽  
Majority Carrier ◽  
Recombination Processes ◽  
Pool Model ◽  
Sputter Deposited

ABSTRACTA comparative study of the deposition temperature (Ts) dependence of the Mobility-lifetime (μτ) products of the charge carriers in glow-discharge and rf sputter-deposited a-Si:H is described and discussed. The Ts-dependence of the μτ's the majority carrier light-intensity exponents of the two types of films are strikingly similar. These observations lead to the conclusion that the structure of the recombination levels as well as the recombination processes are in accord with the “defect pool” Model, in contrast to previous suggestions. The differences between the two types of films thus appear to be limited to the differences in the concentrations of dangling bonds.

Phototransport Properties of a-SiC:H Alloys

1995 ◽  
Vol 377 ◽  
Author(s):  
G. Nery ◽  
A. Ramirez ◽  
O. Resto ◽  
S. Z. Weisz ◽  
Y. Lubianiker ◽  
...  
Keyword(s):  
Light Intensity ◽  
Carbon Concentration ◽  
Charge Carriers ◽  
Recombination Center ◽  
Dangling Bonds

ABSTRACTWe report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime.

Toward the Elimination of Light-Induced Degradation of Amorphous Si by Fluorine Incorporation

1992 ◽  
Vol 258 ◽  
Author(s):  
X. Deng ◽  
E. Mytilineou ◽  
R. T. Young ◽  
S. R. Ovshinsky
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Density Of States ◽  
Deposition Temperature ◽  
Gas Mixture ◽  
Dangling Bonds ◽  
Material Stability ◽  
Saturated State ◽  
High Deposition Temperature ◽  
Amorphous Si

ABSTRACTWe report on evidence that fluorine, properly incorporated into a-Si, replaces weakly bonded hydrogen and improves the material stability under light soaking. Our fluorinated amorphous silicon (a-Si:H:F) is made by if glow discharge at high deposition temperatures up to 430 C from a gas mixture of SiH4 or Si2H6 and F2. These a-Si:H:F films show much lower density of states in the light soaking saturated state than device quality a-Si:H prepared in the same deposition system. It is evident from our results that fluorine incorporated into the network at such high deposition temperature makes for a new configuration which minimizes dangling bonds and other defects.

The Tail States as Sensitizing Recombination Centers for Holes Lifetime in a-Si:H

1998 ◽  
Vol 507 ◽  
Author(s):  
Y. Lubianiker ◽  
R. Rapaport ◽  
I. Balberg ◽  
L. Fonseca ◽  
S.Z. Weisz
Keyword(s):  
Light Intensity ◽  
Thermal Quenching ◽  
Charge Carriers ◽  
Numerical Calculations ◽  
Dangling Bonds ◽  
Intensity Dependence ◽  
Recombination Model ◽  
Light Intensities ◽  
Recombination Centers

ABSTRACTWe have measured the dependence of the holes mobility-lifetime product on temperature under various light intensities in intrinsic a-Si:H. We find that this product exhibits thermal quenching which is accompanied by a superlinear light intensity dependence. Numerical calculations that we have carried out show that these results can be accounted for within the framework of the conventional recombination model. However, to yield such an agreement the capture coefficients for both charge carriers at the tail states must be smaller than the corresponding coefficients for the dangling bonds. Thus the sensitizing nature of the tail states is revealed.

Comparative study on nonlinear dynamics of magnetized and un-magnetized dc glow discharge plasma

2013 ◽  
Vol 88 (6) ◽  
pp. 065005 ◽  
Author(s):  
Bornali Sarma ◽  
Sourabh S Chauhan ◽  
A M Wharton ◽  
A N Sekar Iyengar
Keyword(s):  
Nonlinear Dynamics ◽  
Glow Discharge ◽  
Comparative Study ◽  
Discharge Plasma ◽  
Glow Discharge Plasma ◽  
Dc Glow Discharge

Theory of injection photovoltages in organic insulators

1976 ◽  
Vol 29 (10) ◽  
pp. 2123 ◽  
Author(s):  
JS Bonham
Keyword(s):  
Light Intensity ◽  
Surface States ◽  
Threshold Value ◽  
High Light Intensity ◽  
Open Circuit ◽  
Charge Carriers ◽  
Single Carrier ◽  
Injection Mechanism ◽  
Wavelength Variation ◽  
Open Circuit Photovoltage

Development of an open-circuit photovoltage, U, in an organic insulator by photoinjection of charge carriers from the electrodes is treated theoretically. In the single-carrier case (both electrodes injecting the same carrier) it is shown that, in the absence of surface traps, U increases at a rate of 60 mV per decade of light intensity, II, above a threshold value of II. Photoinjection from the back (unilluminated) electrode by incompletely absorbed light causes U to become independent of ll at high light intensity. The same process may also cause U to change sign as the wavelength approaches an absorption minimum of the organic. Traps in the bulk of the insulator do not affect the single-carrier photovoltage, but traps at the surface may complicate the intensity dependence of U if they are involved in the injection mechanism. They may for example cause U to decrease and change sign at high n. Only shallow surface traps are considered. Possible effects of surface states are discussed briefly. The major assumption of this paper--neglect of all but injected charge carriers-breaks down in principle in the two-carrier case. However, if there are no sources of photovaltage in the bulk of the insulator the two-carrier case gives a stronger dependence of U on II, and no saturation or possibility of change of sign with wavelength variation. Predictions of the model are shown to agree with the results for a number of systems reported in the literature.

Temperature Dependence of the Decay of Optically Excited Charge Carriers in Amorphous Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
J. Whitaker ◽  
P. C. Taylor
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
State Density ◽  
Charge Carriers ◽  
Band Tail ◽  
Spin Resonance ◽  
Recombination Processes ◽  
Long Time ◽  
Tail Structure ◽  
Kinetics Of

AbstractWe report the temperature dependence of the growth and decay of the optically induced electron spin resonance (LESR) on short and long time scales (10-3 s < t < 2500 s). This range of times spans the region between previously published photoluminescence and the LESR data. In addition, we examine the steady-state density of optically excited charge carriers as a function of temperature. These measurements lead to a better understanding of the band tail structure of amorphous silicon as well as the kinetics of the excitation and recombination processes.

Comparative study of local structure for sputter deposited nitrogen doped zinc oxide thin films

2018 ◽  
Vol 5 (5) ◽  
pp. 11153-11158
Author(s):  
Jedsada Manyam ◽  
Thitikorn Boonkoom ◽  
Kittipong Tantisantisom ◽  
Mati Horprathum ◽  
Pinit Kidkhunthod
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Comparative Study ◽  
Local Structure ◽  
Oxide Thin Films ◽  
Nitrogen Doped ◽  
Sputter Deposited

Effects of Deposition Temperature on Strain in Polycrystalline SiC Films Deposited by Radio-Frequency Glow Discharge

1992 ◽  
Vol 31 (Part 2, No. 3B) ◽  
pp. L306-L308 ◽  
Author(s):  
Tetsuyoshi Takeshita ◽  
Takao Inokuma ◽  
Yoshihiro Kurata ◽  
Seiichi Hasegawa
Keyword(s):  
Glow Discharge ◽  
Radio Frequency ◽  
Deposition Temperature ◽  
Radio Frequency Glow Discharge ◽  
Sic Films
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