Excimer Laser Interactions with Ptfe Relevant to thin Film Growth

1993 ◽  
Vol 334 ◽  
Author(s):  
J.T. Dickinson ◽  
M.G. Norton ◽  
J.-J. Shin ◽  
W. Jiang ◽  
S.C. Langford
Keyword(s):  
Thin Film ◽  
Gas Phase ◽  
Film Growth ◽  
Careful Analysis ◽  
Thin Film Growth ◽  
Growth Mechanisms ◽  
Definitive Evidence ◽  
Reaction Models ◽  
Thermally Driven ◽  
Insight Into

AbstractRecently, thin films of polytetrafluroethylene (PTFE) have been grown using pulsed laser ablation of TeflonTM at 266 nm.1,2 To provide further insight into the growth mechanisms we have examined the neutral and charged particle emissions generated in vacuum by 0 - 3 J/cm2 pulses of 248 nm radiation incident on solid PTFE. Measurements include quadrupole and time-of-flight mass spectroscopy. We find in addition to the neutral monomer (C2F4), copious emissions of highly reactive neutral and charged radicals, e.g., CF2, CF3, CF, F, and Cx. A careful analysis of the fluence dependence of these products provides definitive evidence that their precursors are generated by a thermally driven unzipping reaction. Models for the production of the radical species with the observed energies (several eV) involving gas phase processes are presented. Implications for improving PTFE thin film growth will be discussed.

scholarly journals The Growth Mechanisms of Atomic Layer Deposition: An Overview

Eksergi ◽  
2020 ◽  
Vol 17 (2) ◽  
pp. 56
Author(s):  
Edy Riyanto ◽  
Erie Martides ◽  
Endro Junianto ◽  
Budi Prawara
Keyword(s):  
Thin Film ◽  
Theoretical Model ◽  
Atomic Layer Deposition ◽  
Surface Chemistry ◽  
Film Growth ◽  
Atomic Layer ◽  
Deposition Process ◽  
Thin Film Growth ◽  
Growth Mechanisms ◽  
Layer Deposition

In this review, the discussion emphasized on the growth mechanisms of atomic layer deposition which consists of a theoretical model and experimentally growth as well as the measurement testing as evidences. The deposition process description with some testing evidences can be used to facilitate in the effort to understand the basic concept of ALD growth mechanisms. Some metal oxides like Al2O3, HfO2, and TiO2 with these employed precursors are typically used for the detailed illustration during the reaction steps. Although the surface chemistry of ALD process has been well understood, systematic description which combine a theoretical and experimentally growth mechanism is still missing. This paper aims to provide a better understanding of ALD growth mechanisms and surface chemistry which eventually able to contribute on the thin film growth processing.

scholarly journals Alkyl chain assisted thin film growth of 2,7-dioctyloxy-benzothienobenzothiophene

2019 ◽  
Vol 7 (27) ◽  
pp. 8477-8484 ◽  
Author(s):  
Harald Spreitzer ◽  
Benjamin Kaufmann ◽  
Christian Ruzié ◽  
Christian Röthel ◽  
Thomas Arnold ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Alkyl Chain ◽  
Thin Film Growth ◽  
Growth Modes ◽  
Insight Into

An understanding of the thin film growth modes of substrate-induced polymorphs allows a deeper insight into the origin of this class of materials.

scholarly journals Thin film growth of heavy fermion chiral magnet YbNi3Al9

2021 ◽  
Vol 118 (10) ◽  
pp. 102402
Author(s):  
Hiroaki Shishido ◽  
Akira Okumura ◽  
Tatsuya Saimyoji ◽  
Shota Nakamura ◽  
Shigeo Ohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Heavy Fermion ◽  
Film Growth ◽  
Thin Film Growth
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