Investigations of Tin and Ti Film Deposition by Plasma Activated Cvd Using Cyclopentadienyl Cycloheptatrienyl Titanium, a Low Oxidation State Precursor

1993 ◽  
Vol 334 ◽  
Author(s):  
Robert M. Charatan ◽  
Mihal E. Gross ◽  
David J. Eaglesham
Keyword(s):  
Oxidation State ◽  
Integrated Circuit ◽  
Film Formation ◽  
Effective Diffusion ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Tin Film ◽  
Average Grain Size ◽  
Plasma Excitation ◽  
Lower Oxidation

AbstractSequential Ti and TiN thin film deposition by CVD is highly desirable for advanced Si integrated circuit applications. To date, most CVD TiN work has been performed using Ti(IV) compounds. We have investigated plasma assisted CVD using a lower oxidation state precursor, cyclopentadienyl cycloheptatrienyl titanium, (C5H5)Ti(C7H7) (CPCHT), which might provide a more facile pathway to both Ti and TiN film formation. CPCHT was introduced with H2 carrier gas into the downstream region of an NH3, N2 or H2 plasma. Low resistivity (100-250 μΩ-cm), nitrogen rich TiN films with little C or O incorporation were deposited at 300 to 600°C, inclusive with either activated N2 or NH3. Although the film texture was influenced by the chosen plasma gas, the average grain size of the N2 and NH3 plasma deposits was similar. Annealing studies showed that the CVD TiN was an effective diffusion barrier between aluminum and silicon to at least 575°C. TEM micrographs revealed that, in contrast to many CVD metal films, the growth of this TiN was not columnar. Film conformality was investigated by scanning electron microscopy (SEM). Experiments performed with activated H2 resulted in deposits of Ti contaminated with C. No depositions were observed in the absence of plasma excitation.

The Role of Low-Energy Ion/Surface Interactions During Crystal Growth From the Vapor Phase

1986 ◽  
Vol 74 ◽  
Author(s):  
J. E. Greene ◽  
A. Rockett ◽  
J.-E. Sundgren
Keyword(s):  
Surface Segregation ◽  
Ion Irradiation ◽  
Ion Bombardment ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Low Energy ◽  
Nucleation Kinetics ◽  
Wear Resistant Coatings ◽  
Average Grain Size

AbstractLow-energy (often < 100 eV) ion bombardment during thin film deposition is commonly used in such diverse application areas as microelectronics, optical coatings. magnetic recording layers. and hard wear resistant coatings to modify the microstructure and microchemistry of films deposited by a variety of techniques (e.g. sputtering, primary ion deposition, plasma-assisted CVD, and accelerated-beam MBE). Ion irradiation has been shown to affect every phase of deposition including nucleation and growth kinetics, crystal structure and phase stability, the average grain size and degree of preferred orientation of polycrystalline films, the epitaxial temperature of single-crystal films, defect concentrations, elemental incorporation probabilities, surface segregation, and, hence, film properties. As discussed in this brief review, a detailed understanding of many of these processes is beginning to emerge. Effects such as trapping, preferential sputtering, enhanced diffusion, and collisional mixing have been used to interpret and, in some cases, model experimental results. Nevertheless, there are still large gaps in our knowledge of the role of ion bombardment on fundamental processes such as nucleation kinetics.

Multiscale Modeling of Thin-Film Deposition: Applications to Si Device Processing

MRS Bulletin ◽  
2001 ◽  
Vol 26 (3) ◽  
pp. 182-189 ◽  
Author(s):  
F.H. Baumann ◽  
D.L. Chopp ◽  
T. Díaz de la Rubia ◽  
G.H. Gilmer ◽  
J.E. Greene ◽  
...  
Keyword(s):  
Multiscale Modeling ◽  
Integrated Circuit ◽  
Random Access ◽  
Random Access Memory ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Device Processing ◽  
Electrical Connections

Metallization is the back end of the integrated-circuit (IC) fabrication process where the transistor interconnections are formed. Figure 1 shows the metallized part of a static random-access memory chip. Metal lines for electrical connections (Al and Cu) in Si devices are deposited as blanket films and then etched or polished away to define the conducting lines.

Simulators of Thin Film Deposition for Silicon Device Processing

1998 ◽  
Vol 514 ◽  
Author(s):  
G. H. Gilmer ◽  
F. H. Baumann ◽  
T. Diaz de la Rubia
Keyword(s):  
First Principles ◽  
Film Formation ◽  
Level Set Methods ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Tin Films ◽  
Grain Structures ◽  
Device Processing ◽  
Wide Range ◽  
Silicon Device

ABSTRACTWe discuss simulators of the deposition of metal films onto substrates containing vias and trenches. Our Monte Carlo simulations of Al are based on extensive first-principles and molecular dynamics (MD) data for atomic-level energetics and transport rates. We find that surface mobilities are highly anisotropic, and that this has a pronounced influence on film morphology. We have investigated the effects of faceting and grain boundary grooving on step coverage, together with the variation of morphology with deposition rate, temperature, and length scale. Mass transport across low index facets is extremely slow near equilibrium, and this can inhibit the smoothening of surfaces and the elimination of depressions during annealing. The MC model also predicts grain structures during polycrystalline film formation, and the generation of preferred crystallographic orientations (texture). We present MC simulations for a range of conditions, and provide comparisons with experiments on the sputter deposition of Al and TiN films. Results from the MC model are being incorporated into a continuum model based on level-set methods, and we expect that this will form the basis for a simulator that can efficiently explore a wide range of conditions.

scholarly journals Polymer-Based Biocompatible Packaging for Implantable Devices: Packaging Method, Materials, and Reliability Simulation

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1020
Author(s):  
Seonho Seok
Keyword(s):  
Diffusion Barrier ◽  
Integrated Circuit ◽  
Thin Film Deposition ◽  
Implantable Devices ◽  
Film Deposition ◽  
Polymer Materials ◽  
Implantable Medical Devices ◽  
Polymer Encapsulation ◽  
Neural Electrode ◽  
Die Attach

Polymer materials attract more and more interests for a biocompatible package of novel implantable medical devices. Medical implants need to be packaged in a biocompatible way to minimize FBR (Foreign Body Reaction) of the implant. One of the most advanced implantable devices is neural prosthesis device, which consists of polymeric neural electrode and silicon neural signal processing integrated circuit (IC). The overall neural interface system should be packaged in a biocompatible way to be implanted in a patient. The biocompatible packaging is being mainly achieved in two approaches; (1) polymer encapsulation of conventional package based on die attach, wire bond, solder bump, etc. (2) chip-level integrated interconnect, which integrates Si chip with metal thin film deposition through sacrificial release technique. The polymer encapsulation must cover different materials, creating a multitude of interface, which is of much importance in long-term reliability of the implanted biocompatible package. Another failure mode is bio-fluid penetration through the polymer encapsulation layer. To prevent bio-fluid leakage, a diffusion barrier is frequently added to the polymer packaging layer. Such a diffusion barrier is also used in polymer-based neural electrodes. This review paper presents the summary of biocompatible packaging techniques, packaging materials focusing on encapsulation polymer materials and diffusion barrier, and a FEM-based modeling and simulation to study the biocompatible package reliability.

Thin Coating Deposition by Magnetron Sputtering

2018 ◽  
pp. 403-428 ◽  
Author(s):  
Peter Ifeolu Odetola ◽  
Patricia A. P. Popoola ◽  
Philip Oladijo
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Film Formation ◽  
Semiconductor Industry ◽  
Target Material ◽  
Thin Film Deposition ◽  
Growth Conditions ◽  
High Energy ◽  
Film Deposition ◽  
Atomic Scale

Advances in thin-film deposition expose new frontiers to structures and phases that are inaccessible by conventional chemical means and have led to innovative modification of existing materials' properties. Thin-film deposition by magnetron sputtering is highly dependent on ion bombardments; coupled with sublimation of solid target unto the substrate through momentum transfer. It is summarily base on phase change of target material under high-energy influence; corresponding controlled condensation of sputtered atoms on substrate material during which process parameters and growth conditions dictate the pace of the atomic scale processes for thin-film formation. Magnetron sputtering is a state-of-the-art thin film deposition technique versatile for several unique applications, especially in the semiconductor industry. Magnetron sputtering is very novel in its use to achieve low-pressure condition that maximizes and conserve stream of electrons for effective knocking of inert atoms into ions. This ensures the high-energy acquired is not dissipated in gas-phase collisions.

The Role of Low-Energy Ion/Surface Interactions During Crystal Growth From the Vapor Phase

1986 ◽  
Vol 75 ◽  
Author(s):  
J. E. Greene ◽  
A. Rocketr ◽  
J.-E. Sundgren
Keyword(s):  
Surface Segregation ◽  
Ion Irradiation ◽  
Ion Bombardment ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Low Energy ◽  
Nucleation Kinetics ◽  
Wear Resistant Coatings ◽  
Average Grain Size

AbstractLow-energy (often < 100 eV) ion bombardment during thin film deposition is commonly used in such diverse application areas as microelectronics, optical coatings, magnetic recording layers, and hard wear resistant coatings to modify the microstructure and microchemistry of films deposited by a variety of techniques (e.g. sputtering, primary ion deposition, plasma-assisted CVD. and accelerated-beam MBE). Ion irradiation has been shown to affect every phase of deposition including nucleation and growth kinetics, crystal structure and phase stability, the average grain size and degree of preferred orientation of polycrystalline films, the epitaxial temperature of single-crystal films, defect concentrations, elemental incorporation probabilities, surface segregation, and, hence, film properties. As discussed in this brief review, a detailed understanding of many of these processes is beginning to emerge. Effects such as trapping, preferential sputtering, enhanced diffusion, and collisional mixing have been used to interpret and, in some cases, model experimental results. Nevertheless, there are still large gaps in our knowledge of the role of ion bombardment on fundamental processes such as nucleation kinetics.

scholarly journals Biomimetic Lithography and Deposition Kinetics of Iron Oxyhydroxide Thin Films

1993 ◽  
Vol 330 ◽  
Author(s):  
Peter C. Rieke ◽  
Barbara J. tarasevich ◽  
Laurie L. Wood ◽  
Brian D. Marsh ◽  
Lin Song ◽  
...  
Keyword(s):  
Heterogeneous Nucleation ◽  
Film Formation ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Interfacial Free Energy ◽  
Film Deposition ◽  
Iron Oxyhydroxide ◽  
Assembled Monolayers ◽  
Patterned Films

ABSTRACTHeterogeneous nucleation and crystal growth on protein substrates are critical steps in biological hard tissue formation. Self assembled monolayers can be derivatized with various organic functional groups to mimic the “nucleation proteins” for induction of mineral growth. Studies of nucleation and growth on SAMs can provide a better understanding of biomineralization and can also form the basis of a superior thin film deposition process. We demonstrate that micron-scale, electron and ion beam, lithographic techniques can be used to pattern SAMs with functional organic groups that either inhibit or promote mineral deposition. Patterned films of iron oxyhydroxide were deposited on the areas patterned with nucleation sites. Studies of the deposition kinetic of these films show that the surface indeed induces heterogeneous nucleation and that film formation does not occur via absorption of polymers or colloidal material formed homogeneously in solution. The nucleus interfacial free energy was calculated to be 88 mJ/m2 on a SAM surface composed entirely of sulfonate groups.

Reliability Study of TiN/AlCu/TiN Interconnect in Submicron Cmos Process

1993 ◽  
Vol 309 ◽  
Author(s):  
Arthur T. Kuo ◽  
Ratan Choudhury ◽  
William Hata
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Cmos Process ◽  
Reflective Coating ◽  
Tin Film ◽  
Migration Resistance ◽  
Interconnect Reliability ◽  
Film Characteristics ◽  
Deposition Conditions

AbstractIn this paper, the effect of thin film deposition conditions on the multilayer interconnect reliability was studied. Experimental results indicated the most reliable TiN/AICu/TiN interconnect was obtained at the deposition temperature of 350 °C without any substrate bias. This observation was in close agreement with thin film characteristics such as resistivity, grain size and intermetallic formation seen for those deposition conditions. SEM pictures showed the anti-reflective coating (ARC) TiN film did successfully suppress inter-plane extrusion during electromigration test. The failure mechanism for electromigration was also revealed to be mass transport as the result of the grain boundary diffusion instead of catastrophic open failures. The stress migration studies found that TiN/AICu/TiN had superior stress migration resistance than AICu alone.

Influence of plasma excitation frequency fora-Si:H thin film deposition

1987 ◽  
Vol 7 (3) ◽  
pp. 267-273 ◽  
Author(s):  
H. Curtins ◽  
N. Wyrsch ◽  
M. Favre ◽  
A. V. Shah
Keyword(s):  
Thin Film ◽  
Excitation Frequency ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Plasma Excitation

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

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