Effects of Grain Boundaries on the Current-Voltage Characteristics of SOI Mosfets

1984 ◽  
Vol 33 ◽  
Author(s):  
Jerry G. Fossum ◽  
Adelmo Ortiz-Conde
Keyword(s):  
Steady State ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon On Insulator ◽  
High Angle ◽  
Current Voltage ◽  
Strong Inversion ◽  
Steady State Current ◽  
Current Voltage Characteristics ◽  
Conduction Properties

ABSTRACTA physical model that describes the steady-state current-voltage characteristics of field-effect transistors (MOSFETs) fabricated in (poly)silicon-on-insulator (SOI) is described. The model predicts that a single high-angle grain boundary, especially one traversing the channel near the drain, can control the conduction properties of the MOSFET for all (weak-to-strong) inversion conditions in all (linear-to-saturation) regions of operation.

ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2010 ◽  
Vol 05 (03) ◽  
pp. 161-165 ◽  
Author(s):  
A. BENFDILA ◽  
S. ABBAS ◽  
R. IZQUIERDO ◽  
R. TALMAT ◽  
A. VASEASHTA
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Ballistic Transport ◽  
Drain Current ◽  
Functional Behavior ◽  
Current Saturation ◽  
Current Voltage ◽  
Saturation Region ◽  
Current Voltage Characteristics

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

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