Progress Toward Thin-Film LiNbO3 Waveguides on GaAs

1993 ◽  
Vol 329 ◽  
Author(s):  
J. J. Kingston ◽  
F. Leplingard ◽  
D. K. Fork
Keyword(s):  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Ferroelectric Films ◽  
X Ray ◽  
Force Microscopy ◽  
Electron Microscopies ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Semiconductor Substrates ◽  
Waveguide Fabrication

AbstractThe availability of epitaxial ferroelectric films on semiconductor substrates would open up many options for integrated optics technology. There are significant materials issues involved in achieving this integration and we will report on progress toward optical waveguide fabrication on GaAs substrates. As a first step, we are investigating the fabrication of z-LiNbO3 waveguides on A12O3-c. The films have been deposited by off-axis rf magnetron sputtering and characterized by x-ray diffraction, atomic force microscopy, and scanning electron microscopies. Prism coupling has been used to determine waveguide thickness, indices of refraction and propogation losses. Issues concerning crystallography, texture, composition, surface roughness and processing will be discussed.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

MBE GROWN ZnSSe/ZnMgSSe MQW STRUCTURE FOR BLUE VCSEL

2007 ◽  
Vol 06 (05) ◽  
pp. 407-410 ◽  
Author(s):  
I. P. KAZAKOV ◽  
V. I. KOZLOVSKY ◽  
V. P. MARTOVITSKY ◽  
YA. K. SKASYRSKY ◽  
M. D. TIBERI ◽  
...  
Keyword(s):  
Room Temperature ◽  
Structure Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Optical Scanning ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Two Phases

ZnSSe / ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band gap of ZnMgSSe barriers was approximately 3 eV at room temperature. Cathodoluminescence, X-ray diffraction, optical, scanning electron beam, and atomic force microscopy were all used for structure characterization. Decay of the ZnMgSSe solid solution in at least two phases was observed. Improvement in the quality of the crystal lattice and surface morphology was achieved by mismatching the ZnMgSSe from the GaAs substrate by increasing the lattice period by 0.24%.

C− Outgrowths in C+ Thin Films of LiNbO3 on Al2O3-c

1994 ◽  
Vol 341 ◽  
Author(s):  
J. J. Kingston ◽  
D. K. Fork ◽  
F. Leplingard ◽  
F. A. Ponce
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Optical Losses ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preferential Nucleation ◽  
Thin Film Waveguides

AbstractThin-film waveguides of LiNbO3 have been grown on Al2O3-c by off-axis rf magnetron sputtering. The films have been characterized optically by prism coupling measurements, crystallographically by x-ray diffraction, and morphologically by atomic force microscopy. We find that optical losses can be dominated by scattering from large outgrowths that litter the surface of the film. These outgrowths are c− grains imbedded in a c+ matrix. Although some grains nucleate c−, others have their polarity reversed from c+ to c− after nucleation. A model will be presented to explain the preferential nucleation of c+ grains on Al2O3-c. The c− grains grow much faster than the c+ ones because of attractive coulombic forces between the c− grains and the ionized Li and Nb species in the sputter plume.

Synthesis and Morphology of ZnO Films Prepared by Magnetron Sputtering

2013 ◽  
Vol 307 ◽  
pp. 333-336
Author(s):  
Shiuh Chuan Her ◽  
Tsung Chi Chi
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Xrd Patterns

Zinc oxide (ZnO) thin films were deposited on glass substrate by Radio frequency (RF) magnetron sputtering. The effect of substrate temperature on the microstructure of the ZnO films has been investigated. Crystal structure and surface morphology of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD patterns and AFM images show that the crystallinity and grain size are increasing with the increase of substrate temperature.

Correlation between Extended Defects and Surface Morphology in MBE Grown InAs/GaAs Heterostructures

1995 ◽  
Vol 399 ◽  
Author(s):  
M.R. Bruni ◽  
G. Padeletti ◽  
M.G. Simeone ◽  
L. Francesio ◽  
P. Franzosi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Growth Temperature ◽  
Crystal Defects ◽  
Extended Defects ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTInAs single layers were grown by Molecular Beam Epitaxy on nominally (001) oriented GaAs substrates at growth temperatures ranging from 350 °C to 500 °C and thicknesses between 1 nm and 6 μm. A systematic study of the influence of growth temperature and thickness on crystal defects and surface morphology is discussed by comparing High Resolution X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy investigations.Surface hexagonal shaped holes were observed to develop at the lowest temperatures starting from an heterolayer thickness of 50 nm. Both misfit and threading dislocations were revealed; moreover the correlation between hexagonal shaped surface holes and mixed dislocations, with the component of the Burgers vector (b) along the growth axis larger than the minimum interatomic distance, is discussed. The holes increase in size and decrease in density by increasing the layer thickness. An almost complete surface planarization is observed at a thickness of 6 μm by increasing the growth temperature up to 500 °C.

High Quality Epitaxial Pt Films Grown on γ-Al2O3/Si (111) Substrates

2007 ◽  
Vol 124-126 ◽  
pp. 181-184
Author(s):  
Mikinori Ito ◽  
Kazuaki Sawada ◽  
Makoto Ishida
Keyword(s):  
Molecular Beam ◽  
Rf Magnetron Sputtering ◽  
High Energy ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pt Films

Epitaxial Pt films were grown on γ-Al2O3/Si (111) substrate by RF-magnetron sputtering. The γ-Al2O3 buffer layers were grown epitaxially using molecular beam epitaxy. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscopy (AFM). The results of XRD showed that high-quality Pt films were obtained at around 560°C. In addition, the Pt films exhibited a very smooth surface with the root-mean-square (rms) surface roughness is about 0.4 nm.

TEMPERATURE DEPENDENCE ON THE MORPHOLOGICAL EVOLUTION OF DILUTE InAsBi/GaAs NANOSTRUCTURES GROWN BY METALORGANIC VAPOR PHASE EPITAXY

2017 ◽  
Vol 24 (08) ◽  
pp. 1750105 ◽  
Author(s):  
R. BOUSSAHA ◽  
T. MZOUGHI ◽  
H. FITOURI ◽  
A. REBEY ◽  
B. EL JANI
Keyword(s):  
Vapor Phase ◽  
Morphological Evolution ◽  
Quantitative Description ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Substrates

In this work, we discuss the growth of dilute InAsBi nanostructures grown by metalorganic vapor phase epitaxy on GaAs substrates. The surface morphology of InAsBi nanostructures is carefully investigated, as a function of the growth temperature, by scanning electronic microscopy and atomic force microscopy. (004) High-resolution X-ray diffraction configuration has been used to characterize the crystalline quality and Bi incorporation in the InAsBi films. Low temperature and low Bi flow favor the formation of elongated nanostructures during growth. We give a quantitative description of the elemental processes for the formation of these nanostructures. Our description is based on the Tersoff and Tromp theoretical model.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Low Molecular Weight Microfibers with Light Sensing Properties

2017 ◽  
Vol 54 (4) ◽  
pp. 655-658
Author(s):  
Andrei Bejan ◽  
Dragos Peptanariu ◽  
Bogdan Chiricuta ◽  
Elena Bicu ◽  
Dalila Belei
Keyword(s):  
Molecular Weight ◽  
Low Molecular Weight ◽  
X Ray Diffraction ◽  
Aromatic Rings ◽  
X Ray ◽  
Force Microscopy ◽  
Light Sensing ◽  
Sensing Applications ◽  
Atomic Force ◽  
Low Molecular Weight Compounds

Microfibers were obtained from organic low molecular weight compounds based on heteroaromatic and aromatic rings connected by aliphatic spacers. The obtaining of microfibers was proved by scanning electron microscopy. The deciphering of the mechanism of microfiber formation has been elucidated by X-ray diffraction, infrared spectroscopy, and atomic force microscopy measurements. By exciting with light of different wavelength, florescence microscopy revealed a specific optical response, recommending these materials for light sensing applications.

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