Optical And Electrical Properties Of Doped Polysilanes

1993 ◽  
Vol 328 ◽  
Author(s):  
M. Kakimoto ◽  
H. Ueno ◽  
H. Kojima ◽  
Y. Yamaguchi ◽  
A. Nishimura
Keyword(s):  
Charge Transfer ◽  
Electrical Properties ◽  
Optical Absorption ◽  
Strong Interaction ◽  
Optical And Electrical Properties ◽  
Spectral Change ◽  
Iodine Doping ◽  
Spectral Changes ◽  
Doping Effects

ABSTRACTThe doping effects on optical and electrical properties of polysilanes have been investigated by in-situ Measurement. An optical absorption associated with σ–σ* transition was observed near 330 nm for polymethylphenylsilane. By iodine doping, a new absorption was observed at the longer wavelength around 420 nm, which should originate from the charge transfer between dopant and Σ-conjugated system. Similar spectral changes have also been observed for most of investigated linear polysilanes.Furthermore, we have found drastic spectral change upon iodine doping into polysilane with p-N,N-dimethyIaminophenyI substituent. It has very strong absorption up to 700 nm. It Might originate from a strong interaction between the substituent and iodine. At the same time, Σ-conjugation Might also play a significant role on doping into this system.

scholarly journals Optical and Electrical Properties of TiO2/Co/TiO2 Multilayer Films Grown by DC Magnetron Sputtering

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
Marcos G. Valluzzi ◽  
Lucas G. Valluzzi ◽  
Marcos Meyer ◽  
María A. Hernández-Fenollosa ◽  
Laura C. Damonte
Keyword(s):  
Electrical Properties ◽  
Optical Absorption ◽  
Magnetron Sputtering ◽  
Absorption Edge ◽  
Multilayer Films ◽  
Optical And Electrical Properties ◽  
Optical Absorption Edge ◽  
Interlayer Thickness ◽  
Dc Magnetron Sputtering ◽  
Force Microscopy

Transparent oxide multilayer films of TiO2/Co/TiO2 were grown on glass substrate by DC magnetron sputtering technique. The optical and electrical properties of these films were analyzed with the aim of substituting ITO substrate in optoelectronic devices. The samples were characterized by UV-visible spectroscopy, atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM). The effect of Co interlayer thickness (4, 8, and 12 nm) on the transmittance spectra yielded an optical absorption edge shift. The work function of these films was determined by KPFM technique allowing us to predict the Fermi level shift by extending the model for pure materials to our multilayer system. The Fermi level and optical absorption edge seem to be correlated and shifted toward lower energies when Co interlayer thickness is increased.

Li Intercalation in MoS2: In Situ Observation of Its Dynamics and Tuning Optical and Electrical Properties

Nano Letters ◽  
2015 ◽  
Vol 15 (10) ◽  
pp. 6777-6784 ◽  
Author(s):  
Feng Xiong ◽  
Haotian Wang ◽  
Xiaoge Liu ◽  
Jie Sun ◽  
Mark Brongersma ◽  
...  
Keyword(s):  
Electrical Properties ◽  
In Situ Observation ◽  
Optical And Electrical Properties

Effect of Hydrogenation on Structural, Optical and Electrical Properties of Amorphous InAsSb Thin Films

2010 ◽  
Vol 160-162 ◽  
pp. 1508-1512
Author(s):  
Yan Ping Yao ◽  
Chun Ling Liu ◽  
Hai Dong Qi ◽  
Xi Chang ◽  
Chun Wu Wang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrical Properties ◽  
Optical Absorption ◽  
Rf Magnetron Sputtering ◽  
Dark Conductivity ◽  
Optical And Electrical Properties ◽  
Optical Absorption Edge ◽  
Hydrogen Addition ◽  
Optical Gap

Amorphous InAsSb films and hydrogenated InAsSb films are deposited on substrates of quartz glass and silicon by rf magnetron sputtering technique in different gas ambient. The effect of H addition on structure, optical properties and electrical properties of a-InAsSb is studied. It is found that the bonded hydrogen content increases with increasing H2 to Ar flow rate radio(R). When R is 0.1, Hydrogen addition shifts the optical absorption edge to higher energy, decreases the dark conductivity and improves the photo-sensitivity. However, hydrogen addition produces the crystallization of the film at R>0.1. Moreover the optical gap, dark conductivity and photo-sensitivity of the films have a reverse change compared with that in R=0. These results demonstrate that hydrogen has obvious passivation effects on rf sputtered amorphous InAsSb thin films only at R=0.1.

Optical and electrical properties of ammonium perchlorate doped with chromate ions

1976 ◽  
Vol 54 (16) ◽  
pp. 1669-1675 ◽  
Author(s):  
Ah Mee Hor ◽  
S. Radhakrishna ◽  
P. W. M. Jacobs
Keyword(s):  
Electrical Properties ◽  
Dielectric Loss ◽  
Optical Absorption ◽  
Raman Scattering ◽  
Charge Transport ◽  
Single Crystals ◽  
Ammonium Perchlorate ◽  
Dc Conductivity ◽  
Optical And Electrical Properties ◽  
Chromate Ions

The presence of CrO42− ions incorporated substitutionally in single crystals of NH4ClO4 grown from saturated solutions containing 0.1 mol% or 1 mol% CrO42− ion has been demonstrated by measurements of optical absorption, Raman scattering, dielectric loss, and ionic thermoconductivity. The three latter experiments also show the presence of dipoles associated with the CrO42− ions. The dc conductivity of NH4ClO4 crystals is enhanced by doping with CrO42− so that charge transport by defects introduced by the CrO42− ions is inferred. The implications of this finding with respect to mechanisms of charge transport in ammonium perchlorate are discussed.

Synthesis of graphene oxide with a lower band gap and study of charge transfer interactions with perylenediimide

2020 ◽  
Vol 44 (29) ◽  
pp. 12704-12714
Author(s):  
Komal Bhardwaj ◽  
Rachana Kumar ◽  
Naveen Joy Kindo ◽  
Nikita Vashistha ◽  
Akhilesh Kumar Patel ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Charge Transfer ◽  
Electrical Properties ◽  
Band Gap ◽  
Optical And Electrical Properties ◽  
Lower Band

The optical and electrical properties of graphene oxide (GO) have been modulated by using different chemical and physical routes.

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