scholarly journals Optical and Electrical Properties of TiO2/Co/TiO2 Multilayer Films Grown by DC Magnetron Sputtering

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
Marcos G. Valluzzi ◽  
Lucas G. Valluzzi ◽  
Marcos Meyer ◽  
María A. Hernández-Fenollosa ◽  
Laura C. Damonte
Keyword(s):  
Electrical Properties ◽  
Optical Absorption ◽  
Magnetron Sputtering ◽  
Absorption Edge ◽  
Multilayer Films ◽  
Optical And Electrical Properties ◽  
Optical Absorption Edge ◽  
Interlayer Thickness ◽  
Dc Magnetron Sputtering ◽  
Force Microscopy

Transparent oxide multilayer films of TiO2/Co/TiO2 were grown on glass substrate by DC magnetron sputtering technique. The optical and electrical properties of these films were analyzed with the aim of substituting ITO substrate in optoelectronic devices. The samples were characterized by UV-visible spectroscopy, atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM). The effect of Co interlayer thickness (4, 8, and 12 nm) on the transmittance spectra yielded an optical absorption edge shift. The work function of these films was determined by KPFM technique allowing us to predict the Fermi level shift by extending the model for pure materials to our multilayer system. The Fermi level and optical absorption edge seem to be correlated and shifted toward lower energies when Co interlayer thickness is increased.

Effect of Hydrogenation on Structural, Optical and Electrical Properties of Amorphous InAsSb Thin Films

2010 ◽  
Vol 160-162 ◽  
pp. 1508-1512
Author(s):  
Yan Ping Yao ◽  
Chun Ling Liu ◽  
Hai Dong Qi ◽  
Xi Chang ◽  
Chun Wu Wang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrical Properties ◽  
Optical Absorption ◽  
Rf Magnetron Sputtering ◽  
Dark Conductivity ◽  
Optical And Electrical Properties ◽  
Optical Absorption Edge ◽  
Hydrogen Addition ◽  
Optical Gap

Amorphous InAsSb films and hydrogenated InAsSb films are deposited on substrates of quartz glass and silicon by rf magnetron sputtering technique in different gas ambient. The effect of H addition on structure, optical properties and electrical properties of a-InAsSb is studied. It is found that the bonded hydrogen content increases with increasing H2 to Ar flow rate radio(R). When R is 0.1, Hydrogen addition shifts the optical absorption edge to higher energy, decreases the dark conductivity and improves the photo-sensitivity. However, hydrogen addition produces the crystallization of the film at R>0.1. Moreover the optical gap, dark conductivity and photo-sensitivity of the films have a reverse change compared with that in R=0. These results demonstrate that hydrogen has obvious passivation effects on rf sputtered amorphous InAsSb thin films only at R=0.1.

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